BC807-16W SERIES PNP GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 300 mWatts * PNP epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) * Collector current I C = 500mA * In compliance with EU RoHS 2002/95/EC directives 0.087(2.20) 0.078(2.00) 0.004(0.10)MIN. FEATURES * General purpose amplifier applications 0.054(1.35) 0.045(1.15) MECHANICAL DATA 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) * Case: SOT-323, Plastic * Terminals: Solderable per MIL-STD-750, Method 2026 * Apporx. Weight: 0.0001 ounce, 0.005 gram 0.044(1.10) 0.035(0.90) 0.004(0.10)MAX. * Device Marking : BC807-16W : 7S BC807-25W : 7V 0.016(0.40) 0.008(0.20) BC807-40W : 7W MECHANICAL DATA PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -500 mA PTOT 300 mW TJ , TSTG -55 to 150 oC SYMBOL Value UNIT RJA 420 oC/W Collector Current - Continuous Total Power Dissipation (Note 1) Junction and Storage Temperature Range THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction to Ambient (Note 1) Note 1 : Transistor mounted on FR-5 board minimum pad mounting conditions. March 22,2011-REV.04 PAGE . 1 BC807-16W SERIES ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage (IC=-10mA, IB=0) V(BR)CEO -45 - - V Collector-Base Breakdown Voltage (V EB=0V, IC=-10A) V(BR)CBO -50 - - V Emitter-Base Breakdown Voltage (IE=-1A,Ic=0) V(BR)EBO -5.0 - - V IEBO - - -100 nA - -100 nA ICBO -5.0 A 100 160 250 - 250 400 600 - 40 - - Emitter-Base Cutoff Current (VEB=-5V) Collector-Base Cutoff Current (V CB=-20V,IE=0) TJ =25OC TJ =150OC DC Current Gain (Ic=-100mA,VCE=-1V) BC807-16W BC807-25W BC807-40W hFE (Ic=-500mA,VCE=-1V) Collector-Emitter Saturation Voltage (Ic=-500mA ,IB=-50mA) VCE(SAT) - - -0.7 V Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V) VBE(ON) - - -1.2 V C CBO - 7.0 - pF fT 100 - - MHz Collector-Base Capacitance (VCB=-10V,IE=0,f=1MHz) Current Gain-Bandwidth Product (Ic=-10mA,V CE=-5V,f=100MHz) March 22,2011-REV.04 PAGE . 2 BC807-16W SERIES -10 -1 TJ = 25C IC/IB = 10 TJ = 150C VCE(SAT) (V) VBE(SAT) (V) IC/IB = 10 -1 -0.1 -0.1 -1 -10 -100 TJ = 25C -0.01 -0.1 -1000 TJ = 150C -0.1 IC, Collector Current (mA) -1 -10 -100 -1000 IC, Collector Current (mA) Fig.1 Base-Emitter Saturation Voltage Fig.2 Collector-Emitter Saturation Voltage 600 600 VCE = -1V TJ = 75C 400 VCE = -1V 400 HFE TJ = 150C HFE TJ = 75C TJ = 150C 200 200 TJ = 25C TJ = 25C 0 -0.1 -1 -10 -100 0 -0.1 -1000 IC, Collector Current (mA) -100 -1000 Fig.4 BC807-25W: Typical DC Current Gain 800 100 VCE = -1V TJ = 150C 400 TJ = 25C 0 -0.1 -1 TJ = 75C -10 -100 IC, Collector Current (mA) Fig.5 BC807-40W: DC Current Gain March 22,2011-REV.04 -1000 f =1MHz TJ=25C CEB CCB, CCB (pF) 600 HFE -10 IC, Collector Current (mA) Fig.3 BC807-16W: Typical DC Current Gain 200 -1 10 CCB 1 -0.1 -1 -10 -100 VCB, VEB (V) Fig.6 Typical Capacitance PAGE . 3 BC807-16W SERIES MOUNTING PAD LAYOUT ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2011 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. March 22,2011-REV.04 PAGE . 4