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TOSHIBA Thyristor Silicon Planar Type
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Condenser Discharge Control Applications
• FWD included between cathode and anode
• Critical rate of rise of ON-state current: di/dt = 750 A/µs
• Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs)
• Repetitive peak OFF-state voltage: VDRM = 800 V
• Gate trigger current: IGT = 30 mA (max)
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Repetitive peak OFF-state voltage VDRM 800 V
Repetitive peak surge ON-state
current (Note 1)
ITRM 500 A
Repetitive peak surge forward current
(Note 1) IFRM 500 A
Critical rate of rise of ON-state current
(Note 1) di/dt 750 A/μs
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak forward gate voltage VFGM 10 V
Peak reverse gate voltage VRGM −5 V
Peak forward gate current IGM 2 A
Junction temperature Tj −40~125 °C
Storage temperature range Tstg −40~150 °C
Note 1: VD<
=
0.8 × rated, Tc = 85°C, igp >
=
60 mA, tgw >
=
10 μs, tgr
<
=
150 ns
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 13-10J1B
Weight: 1.5 g (typ.)
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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Characteristics
indicator
Part No. (or abbreviation code)
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Repetitive peak OFF-state current IDRM V
DRM = Rated ⎯ ⎯ 10 μA
Peak ON-state voltage (thyristor) VTM I
TM = 25 A ⎯ ⎯ 1.5 V
Peak forward voltage (diode) VFM I
FM = 25 A ⎯ ⎯ 2.0 V
Gate trigger voltage VGT ⎯ ⎯ 1.0 V
Gate trigger current IGT
VD = 6 V, RL = 10 Ω
⎯ ⎯ 30 mA
Gate non-trigger voltage VGD V
D = Rated, Tc = 125°C 0.2 ⎯ ⎯ V
Critical rate of rise of OFF-state voltage dv/dt
VDRM = Rated, Tc = 125°C
Exponential Rise
⎯ 50 ⎯ V/μs
Holding current IH V
D = 6 V, ITM = 1 A ⎯ ⎯ 35 mA
Thermal resistance (junction to ambient) Rth (j-a) DC ⎯ ⎯ 70 °C/W
Equivalent Circuit
0.5 IP
tw = 2 μs
t
IP
0.5 IP
di/dt =t
tw = πLC , IP =
L/C
VD
Test Circuit Examples
C
R L
VD
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GATE
CATHODE
ANODE
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Instantaneous ON-state current iT (A)
iGT(tw)/IGT
Case temperature Tc (°C)
IGT (Tc)/IGT (Tc = 25°C) – Tc (typical)
IGT (Tc)/IGT (Tc = 25°C)
Case temperature Tc (°C)
VGT (Tc)/VGT (Tc = 25°C) – Tc (typical)
VGT (Tc)/VGT (Tc = 25°C)
Case temperature Tc (°C)
IH (Tc)/IH (Tc = 25°C) – Tc (typical)
IH (Tc)/IH (Tc = 25°C)
Gate trigger pulse width tw (μs)
Pulse trigger characteristics (typical)
Instantaneous ON-state voltage vT (V)
iT – vT (thyristor)
Instantaneous forward voltage vF (V)
iF – vF (diode)
Instantaneous forward current iF (A)
0.0
−60
2.5
2.0
1.5
1.0
0.5
140 100 60 20 −20
VD = 6 V
RL = 10 Ω
2.0
0.0
−60 140 100 60 20 −20
0.5
1.0
1.5
VD = 6 V
RL = 10 Ω
140 100 60 20 −20
VD = 6 V
ITM = 1 A
0.0
2.5
2.0
1.5
1.0
0.5
−60
5
0
0.1 1 10 100
1
2
3
4
Resistance load
VD = 6 V
RL = 10 Ω
Tc = 25°C
Rectangular waveform
tw
iGT
1
0.0
1000
100
10
1.0 1.5 2.5 3.0
25°C
Tj = 125°C
0.5 2.0
1
0.0
1000
100
10
2.0 3.0 5.0 6.0 1.0 4.0
25°C
Tj = 125°C
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
