BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Fast switching device(Trr<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish
Pb free version, RoHS compliant
Min Max Min Max
Case : Flat lead SOD-323F small outline plastic package 1.15 1.40 0.045 0.055
2.30 2.80 0.091 0.106
0.25 0.40 0.010 0.016
1.60 1.80 0.063 0.071
0.80 1.10 0.031 0.043
0.05 0.15 0.002 0.006
Package
SOD-323F
SOD-323F
Maximum Ratings and Electrical Characteristics
Maximum Ratings
1 usec
1 msec
Operating Junction Temperature TJ150 °C
Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
Ordering Information
Part No. Packing
TSTG
200
E
C
A
F
D
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Unit (mm) Unit (inch)
Dimensions
B
SOD-323F
Features
Mechanical Data
A
Power Dissipation 250
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
High temperature soldering guaranteed: 260°C/10s
BAS316WS RR 3Kpcs / 7" Reel
Polarity : Indicated by cathode band
Weight : 4.6±0.5 mg
Marking Code : W2
Pin Configuration
Non-Repetitive Peak Forward Surge Current
Pulse Width= 4.0
BAS316WS RRG 3Kpcs / 7" Reel
IFSM 1.0
Suggested PAD Layout
UnitsValueSymbol
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Dimensions Unit (mm)
X 0.710
Storage Temperature Range
Average Forward Current mW
IO
PD
Pulse Width=
°C
-65 to + 150
mA
X12.900
Y 0.403
X
1
Y(2X)
X
(2X)
Version : A10
BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Electrical Characteristics
IR= 100 uA
IF= 1.0 mA
IF= 10 mA
IF= 50 mA
IF= 150 mA
VR= 75 V
VR= 25 V
Junction Capacitance VR=
Reverse Recovery Time IF=IR=
Tape & Reel specification
Dimension(mm)
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
W1 14.4 Max.
Overall tape thickness T 0.6 Max.
Tape width
Reel width W 8.30 Max.
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center P1
3.50 ±0.05
4.00 ±0.10
2.00 ±0.10
F
P0
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Item
Carrier depth 2.40 Max.
1.50 +0.10D
Symbol
K
0.855
E
D2
178 ± 1
50 Min.
13.0 ± 0.5
1.75 ±0.10
A
D1
VF
0.715
Max Units
V
V
-
Min
-
-
Type Number Symbol
1.000
- 1.250
Forward Voltage
Reverse Breakdown Voltage V(BR) 100 -
Reverse Leakage Current IR-1.00 uA
0.03
0, f=1.0MHz CJ- 1.5 pF
ns
10mA, Irr=0.1 x IR,Trr - 4.0
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1D2
Aersion : A10
Version : A10
BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Rating and Characteristic Curves
FIG 1 Typical Forward Characteristics
0
25
50
75
100
125
150
175
200
225
250
275
300
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Instantaneous Forward Current (mA)
FIG 3 Admissible Power Dissipation Curve
0
50
100
150
200
250
0 25 50 75 100 125 150 175
Power Dissipation (mW)
FIG 4 Typical Junction Capacitance
0
0.2
0.4
0.6
0.8
0246810121416
Junction Capacitance (pF)
Ta=25°C
Ambient Temperature (°C) Reverse Voltage (V)
Ta=25°C
FIG 2 Reverse Current as a function of junction
temperature.
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140 160 180 200
Reverse Current (uA)
VR=75V
max
Junction Temperature (oC)
Instantaneous Forward Voltage (V)
VR=75V
typ
typ
VR=25V
Version : A10
