LITE-ON SEMICONDUCTOR S1U50-A SERIES SCRs 1 AMPERES RMS 100 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 (TO-226AA) TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts On- State Current Rating of 0.8 Amperes RMS at 80 High Surge Current Capability -- 10 Amperes Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt -- 20 V/msec Minimum at 110 Glass-Passivated Surface for Reliability and Uniformity TO-92 DIM. SEATING PLANE Pb-Free Package MIN. MAX. A 4.45 B 4.32 5.33 C 3.18 4.19 D 1.15 1.39 E 2.42 2.66 F 12.7 ------ G 2.04 2.66 H 2.93 ----- I 3.43 ----- 4.70 All Dimensions in millimeter PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit Peak Repetitive Off- State Voltage (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open) S1U50100A S1U50200A S1U50400A S1U50600A S1U50700A On-State RMS Current (TC = 80 ) 180 Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25 ) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TA = 25 , Pulse Width 1.0 us) Forward Average Gate Power (TA = 25 , t = 8.3 ms) Forward Peak Gate Current (TA = 25 , Pulse Width 1.0 us) Reverse Peak Gate Voltage (TA = 25 , Pulse Width 1.0 ms) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded VDRM, VRRM 100 200 400 600 700 Volts IT(RMS) 1.0 Amp ITSM 10 Amps It 0.415 As PGM 0.1 Watt PG(AV) 0.1 Watt IGM 1.0 Amp VGRM 5 Volts TJ -40 to +110 Tstg -40 to +150 2 2 Rev.2, Jun-2005, KTXD05 RATING AND CHARACTERISTIC CURVES S1U50-A SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds Symbol Value Unit RthJC RthJA 75 150 /W TL 260 ELECTRICAL CHARACTERISTICS (Tc=25unless otherwise noted) Characteristics Symbol Min Typ Max Unit IDRM IRRM ------- ------- 10 100 uA VTM ---- ---- 1.7 Volts IGT ---- 20 50 uA OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (1) (VD=Rated VDRM and VRRM; RGK =1K Ohms) Tc=25 Tc=125 ON CHARACTERISTICS Peak Forward On-State Voltage @TA=25 (ITM= 1.0A Peak, Pulse Width 1.0 ms, Duty Cycle 1%) Gate Trigger Current (Continuous dc) (2) (VAK = 7.0 Vdc; RL = 100 Ohms) TC=25 Holding Current (VAK = 7.0 V, Initiating Current = 20 mA) TC=25 TC=-40 IH ------- 0.5 ---- 5.0 10 mA Latch Current (VAK =7.0 V, Ig= 200 uA) TC=25 TC=-40 IL ---- 0.6 ---- 10 15 mA Gate Trigger Voltage (Continuous dc) (VD = 7.0 Vdc; RL =100 Ohms) TC= 25 TC=-40 VGT ------- 0.62 ----- 0.8 1.2 Volts Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, PGK=1K Ohms, TJ=110 dv/dt 20 35 ---- V/us Repetitive Critical Rate of Rise of On-State Current IPK=20A,Pw=10 usec,diG/dt=1A/usex,Igt=20mA di/dt ---- ---- 50 A/us DYNAMIC CHARACTERISTICS (1) RGK = 1000 Ohms included in measurement (2) Does not include RGK in measure RATING AND CHARACTERISTIC CURVES S1U50-A SERIES RATING AND CHARACTERISTIC CURVES S1U50-A SERIES Specifications mentioned in this publication are subject to change without notice.