SEMICONDUCTOR TIP42C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES *Complementary to TIP41C. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -6 Pulse ICP -10 IB -2 A 2 W 65 W Tj 150 Tstg -55150 Collector Current A Base Current Collector Power Ta=25 Dissipation Tc=25 PC Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.7 mA Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -400 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA VCE=-4V, IC=-0.3A 30 - - DC Current Gain hFE VCE=-4V, IC=-3A 15 - 75 Collector Emitter Sustaining Voltage Collector-Emitter Saturation Voltage VCE(sat) IC=-6A, IB=-600mA - - -1.5 V Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-6A - - -2.0 V 3.0 - - MHz fT Transition Frequency 1999. 11. 16 Revision No : 1 VCE=-10V, IC=-500mA 1/2 TIP42C 1999. 11. 16 Revision No : 1 2/2