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SEMICONDUCTOR
TECHNICAL DATA
TIP42C
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
·Complementary to TIP41C.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current
DC IC-6
A
Pulse ICP -10
Base Current IB-2 A
Collector Power
Dissipation
Ta=25℃PC
2 W
Tc=25℃65 W
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.7 mA
Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -400 μA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA
DC Current Gain hFE
VCE=-4V, IC=-0.3A 30 - -
VCE=-4V, IC=-3A 15 - 75
Collector-Emitter Saturation Voltage VCE(sat) IC=-6A, IB=-600mA - - -1.5 V
Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-6A - - -2.0 V
Transition Frequency fTVCE=-10V, IC=-500mA 3.0 - - MHz
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TIP42C
Revision No : 1
