Data Sheet Shottky barrier diode RB715W Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.30.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6 0.2 0.150.05 (3) 00.1 0.6 0.1Min (1) 0.6 EMD3 0.550.1 0.5 0.5 1.00.1 Construction Silicon epitaxial planar 0.7 1.60.2 0.80.1 0.7 (2) 0.20.1 -0.05 1.3 Applications Low current rectification 0.70.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) 1.550.1 1.5 0.1 00 2.00.05 0.30.1 8.00.2 00.1 1.80.2 1.80.1 5.50.2 3.50.05 1.750.1 4.00.1 0.50.1 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature Limits Symbol VRM VR Io IFSM Tj Tstg Unit V V mA mA C C 40 40 30 200 125 40 to 125 (*1) Rating of per diode Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Min. Typ. Max. - - 0.37 V IF=1mA - - 1 A Ct - 2.0 - pF VR=10V VR=1.0V f=1.0MHz 1/3 Unit Conditions Symbol VF IR 2011.04 - Rev.C Data Sheet RB715W Ta=125 Ta=125 Ta=75 1 Ta=-25 Ta=25 0.1 100 Ta=75 10 1 Ta=25 0.1 Ta=-25 0.01 0.001 0.01 0 500 1000 0 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 280 270 AVE:267.4mV 0.7 0.6 0.5 0.4 0.3 AVE:0.083nA 0.2 8.3ms 10 5 AVE:7.30A 5 4 3 2 1 0 AVE:2.02pF Ct DISPERSION MAP 10 Ifsm 15 8.3ms 8.3ms 1cyc 10 5 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 9 Ifsm 8 t 7 6 5 4 3 2 0 1 Per diode Rth(j-c) 0.03 D=1/2 0.02 Sin(180) DC 0.01 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Per diode REVERSE POWER DISSIPATION:PR (W) Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) IF=10mA time 10 TIME:t(ms) IFSM-t CHARACTERISTICS 0.003 0.04 Mounted on epoxy board 300us 10 0.001 6 1 0 100 7 0 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 15 1ms Ta=25 f=1MHz VR=0V n=10pcs 8 0.1 20 Ifsm 30 9 IR DISPERSION MAP 20 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25 VR=10V n=30pcs VF DIPERSION MAP IM=1mA 10 10 0.8 250 1000 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=1mA n=30pcs 260 1 0.1 30 1 290 10000 20 0.9 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 f=1MHz REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 300 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 0.002 D=1/2 DC 0.001 Sin(180) 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2/3 0.05 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 2011.04 - Rev.C Data Sheet RB715W 0.1 0.1 0.08 t DC 0.06 T VR D=t/T VR=20V Tj=125 D=1/2 0.04 0.02 Per diode Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode 0.06 DC 0.04 D=1/2 0 t T VR D=t/T VR=20V Tj=125 Sin(180) 0.02 Sin(180) Io 0A 0V 0.08 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A