TYPICAL CHARACTERISTICS
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
01 2 3 4 5
Saturation Characteristics
5V
VGS=
10V
7V
8V
6V
4V
3V
9V
On-resistance v gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source On-Resistance (Ω)
11020
ID=
1A
0.5A
0.25A
0.1
1
10
Normalised RDS(on) and VGS(th) v Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
Tj-Junction Temperature (C°)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
0.4-80 -60
0
4
3
1
2
ID=1A
VGS=10V
ID=1mA
VGS=VDS
Transconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (S)
01 2 3 4 5
0.7
0.6
0.4
0.1
0
0.2
0.5
0.3
VDS=10V
Q-Charge (nC)
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
VDD=
20V 30V 50V
10
8
6
2
0
4
12
14
16
ID=3A
00.5 1.0 1.5 2.0 2.5 3.0
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Coss
Ciss
Crss
010 20 30 40 50
60
40
20
80
100
ZVN2106G SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
* 60 Volt VDS
*R
DS(on)=2Ω
COMPLEMENTARY TYPE - ZVP2106G
PARTMARKIN G DETAIL - ZVN2106
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuo us Drain Cur rent at Tamb=25°C ID710 mA
Pulsed Drain Current IDM 8A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 2.0 W
Operating and Storage Temperature Rang e Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS 60 V ID=1mA, V GS=0V
Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V ID=1mA , VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain Current IDSS 500
100 nA
µAVDS=60 V, VGS=0
VDS=48 V, VGS=0V,
T=125°C(2)
On-State Drain Current (1) ID(on) 2AV
DS=18V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 2ΩVGS=10V,ID=1A
Forward Transconductan ce (1)(2) gfs 300 mS VDS=18V,ID=1A
Input Capacitance (2) Ciss 75 pF
Common So urce Output
Capacitance (2) Coss 45 pF VDS=18 V, VGS=0V, f=1MHz
ReverseTransfer Capacitance(2) C rss 20 pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈18V, I D=1A
Rise Time (2)(3) tr8ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN2106G
D
D
S
G
3 - 386 3 - 385
TYPICAL CHARACTERISTICS
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
01 2 3 4 5
Saturation Characteristics
5V
VGS=
10V
7V
8V
6V
4V
3V
9V
On-resistance v gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source On-Resistance (Ω)
11020
ID=
1A
0.5A
0.25A
0.1
1
10
Normalised RDS(on) and VGS(th) v Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
Tj-Junction Temperature (C°)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
0.4-80 -60
0
4
3
1
2
ID=1A
VGS=10V
ID=1mA
VGS=VDS
Transconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (S)
01 2 3 4 5
0.7
0.6
0.4
0.1
0
0.2
0.5
0.3
VDS=10V
Q-Charge (nC)
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
VDD=
20V 30V 50V
10
8
6
2
0
4
12
14
16
ID=3A
00.5 1.0 1.5 2.0 2.5 3.0
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Coss
Ciss
Crss
010 20 30 40 50
60
40
20
80
100
ZVN2106G SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
* 60 Volt VDS
*R
DS(on)=2Ω
COMPLEMENTARY TYPE - ZVP2106G
PARTMARKIN G DETAIL - ZVN2106
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuo us Drain Cur rent at Tamb=25°C ID710 mA
Pulsed Drain Current IDM 8A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 2.0 W
Operating and Storage Temperature Rang e Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS 60 V ID=1mA, V GS=0V
Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V ID=1mA , VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain Current IDSS 500
100 nA
µAVDS=60 V, VGS=0
VDS=48 V, VGS=0V,
T=125°C(2)
On-State Drain Current (1) ID(on) 2AV
DS=18V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 2ΩVGS=10V,ID=1A
Forward Transconductan ce (1)(2) gfs 300 mS VDS=18V,ID=1A
Input Capacitance (2) Ciss 75 pF
Common So urce Output
Capacitance (2) Coss 45 pF VDS=18 V, VGS=0V, f=1MHz
ReverseTransfer Capacitance(2) C rss 20 pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈18V, I D=1A
Rise Time (2)(3) tr8ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN2106G
D
D
S
G
3 - 386 3 - 385
