SILICON PLASTIC POWER TRANSISTOR NPN BD243A/B/C 6A 65W Technical Data ...designed for use in general-purpose switching and amplifier applications. F Collector-Emitter Saturation VoltageVCE=1.5Vdc(Max)@IC=6Adc F Collector-Emitter Sustaining VoltageVCEO(sus)=60/80/100Vdc(Min) BD243A/B/C F TO-220 Package MAXIMUM RATINGS Rating Symbol BD243A BD243B BD243C Unit Collector- Emitter Voltage V CEO 60 80 100 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CB V EB IC 60 80 5 6 10 2 100 Vdc Vdc Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range THERMAL CHARACTERISTICS Characteristic IB PD Adc 65 0.52 -65 to +150 Tj,Tstg Symbol Max. 1.92 Thermal resistance junction to case R thjc Watts W/C C Unit C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic C unless otherwise noted ] Symbol Min Typ Max Unit * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage(1) VCEO(sus) [ Ic =30 mAdc, IB = 0 ] BD243A BD243B BD243C Collector Cutoff Current ICE0 [ VCE = 30 Vdc, IB = 0 ] BD243A [VCE=60Vdc,IB=0] BD243B,BD243C Collector Cutoff Current ICES [VCE=60Vdc, VBE =0] BD243A [VCE=80Vdc, VBE =0] BD243B [VCE=100Vdc,VBE =0] BD243C Emitter Cutoff Current IEBO [ VEB =5.0 Vdc , Ic = 0 ] Vdc 60 80 100 mAdc 0.7 0.7 Adc 400 400 400 1 mAdc * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 0.3Adc , VCE = 4.0 Vdc ] [ Ic = 3Adc , VCE = 4.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 6Adc , IB =1Adc ] Base-Emitter on Voltage [ Ic =6 Adc , VCE= 4V] hFE 30 15 VCE(sat) VBE(on) 1.5 Vdc 2.0 Vdc DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ] Small-Signal Current Gain [ IC=0.5 Adc, VCE=10 Vdc, f=1kHz] * fT 3 hfe 20 (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0% MHz