SILICON PLASTIC POWER TRANSISTOR
NPN BD243A/B/C
6A 65W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F Collector-Emitter Saturation Voltage-
VCE=1.5Vdc(Max)@IC=6Adc
F Collector-Emitter Sustaining Voltage-
VCEO(sus)=60/80/100Vdc(Min) BD243A/B/C
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol BD243A BD243B BD243C Unit
Collector- Emitter Voltage V CEO 60 80 100 Vdc
Collector – Base Voltage V CB 60 80 100 Vdc
Emitter Base Voltage V EB 5 Vdc
Collector Current – Continuos
Peak I C6
10 Adc
Base Current I B2 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 65
0.52 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc
1.92 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =30 mAdc, IB = 0 ] BD243A
BD243B
BD243C
V
CEO(sus)
60
80
100
Vdc
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] BD243A
[V
CE=60Vdc,IB=0] BD243B,BD243C
ICE0 0.7
0.7
mAdc
Collector Cutoff Current
[VCE=60Vdc, VBE =0] BD243A
[VCE=80Vdc, VBE =0] BD243B
[VCE=100Vdc,VBE =0] BD243C
ICES 400
400
400
µAdc
Emitter Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ] IEBO 1 mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 0.3Adc , VCE = 4.0 Vdc ]
[ Ic = 3Adc , VCE = 4.0 Vdc ]
hFE 30
15
Collector-Emitter Saturation Voltage
[ Ic = 6Adc , IB =1Adc ] VCE(sat) 1.5 Vdc
Base-Emitter on Voltage
[ Ic =6 Adc , VCE= 4V] V
BE(on)
2.0 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ] fT3 MHz
Small-Signal Current Gain
[ IC=0.5 Adc, VCE=10 Vdc, f=1kHz] hfe 20
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
