FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 8/10/12/15/20/25/35/70/100 ns (Commercial)
– 10/12/15/20/25/35/70/100 ns(Industrial)
– 12/15/20/25/35/45/70/100 ns (Military)
Low Power Operation
Output Enable and Dual Chip Enable Control
Functions
Single 5V±10% Power Supply
Data Retention with 2.0V Supply, 10 µA Typical
Current (FT6164L Military)
Common Data I/O
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 28-Pin 300 mil Plastic DIP, SOJ
– 28-Pin 600 mil Plastic DIP (70 & 100ns)
– 28-Pin 300 mil SOP (70 & 100ns)
– 28-Pin 300 mil Ceramic DIP
– 28-Pin 600 mil Ceramic DIP
– 28-Pin 350 x 550 mil LCC
– 32-Pin 450 x 550 mil LCC
– 28-Pin CERPACK
DESCRIPTION
The FT6164 is a 65,536-bit ultra high-speed static RAM
organised as 8K x 8. The CMOS memory requires no
clocks or refreshing and has equal access and cycle
times. Inputs are fully TTL-compatible. The RAM operates
from a single 5V±10% tolerance power supply. With
battery backup, data integrity is maintained with supply
voltages down to 2.0V. Current drain is typically 10 µA
from a 2.0V supply.
FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS
1519B
DIP (P5, P6, C5, C5-1, D5-1, D5-2),
SOJ (J5), CERPACK (F4), SOP(S6)
SEE PAGE 7 FOR LCC PIN CONFIGURATIONS
Access times as fast as 8 nanoseconds are available,
permitting greatly enhanced system operating speeds.
The FT6164 is available in 28-pin 300 mil DIP and SOJ, 28-
pin 600 mil plastic and ceramic DIP, 28-pin 350 x 550 mil
LCC, 32-pin 450 x 550 mil LCC, and 28-pin CERPACK.
The 70ns and 100ns FT6164s are available in the 600 mil
plastic DIP.
FT6164
ULTRA HIGH SPEED 8K x 8
STATIC CMOS RAMS
REV 1.6 1 of 17
MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
VCC Power Supply Pin with –0.5 to +7 V
Respect to GND
Terminal Voltage with –0.5 to
VTERM Respect to GND VCC +0.5 V
(up to 7.0V)
TAOperating Temperature –55 to +125 °C
Symbol Parameter Value Unit
TBIAS Temperature Under –55 to +125 °C
Bias
TSTG Storage Temperature –65 to +150 °C
PTPower Dissipation 1.0 W
IOUT DC Output Current 50 mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
ISB
Standby Power Supply
Current (TTL Input Levels)
CE1 VIH or Mil.
CE2 VIL, Ind./Com’l.
VCC= Max,
f = Max., Outputs Open
___
___ 40
30
___
___
___
___
25
15
40
n/a
1
n/a
mA
mA
___
___
CE1 VHC or Mil.
CE2 VLC, Ind./Com’l.
VCC= Max,
f = 0, Outputs Open
VIN VLC or VIN VHC
Standby Power Supply
Current
(CMOS Input Levels)
ISB1
Grade(2) Ambient
Temperature GND VCC
0V
0V
5.0V ± 10%
5.0V ± 10%
0V 5.0V ± 10%
–55°C to +125°C
Military
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
5
7
Unit
pF
pF
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
Symbol
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
VIH
VIL
VHC
VLC
VCD
VOL
VOH
ILI
ILO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.
IOH = –4 mA, VCC = Min.
VCC = Max. Mil.
VIN = GND to VCC Ind./Com’l.
VCC = Max., CE = VIH, Mil.
VOUT = GND to VCC Ind./Com’l.
FT6164
Min
2.2
–0.5(3)
VCC –0.2
–0.5(3)
2.4
–10
–5
–10
–5
Max
VCC +0.5
0.8
VCC +0.5
0.2
–1.2
0.4
+10
+5
+10
+5
FT6164L
Min Max
2.2
–0.5(3)
VCC –0.2
–0.5(3)
2.4
–5
n/a
–5
n/a
VCC +0.5
0.8
VCC +0.5
0.2
0.4
–1.2
+5
n/a
+5
n/a
Unit
V
V
V
V
V
V
V
µA
µA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Typ.
Industrial
Commercial
–40°C to +85°C
0°C to +70°C
FT6164
REV 1.6 2 of 17
DATA RETENTION CHARACTERISTICS (FT6164L, Military Temperature Only)
Typ.* Max
Symbol Parameter Test Condition Min VCC=V
CC= Unit
2.0V 3.0V 2.0V 3.0V
VDR VCC for Data Retention 2.0 V
ICCDR Data Retention Current 10 15 200 300 µA
tCDR Chip Deselect to 0 ns
Data Retention Time
tR
Operation Recovery Time tRC
§ns
*TA = +25°C
§tRC = Read Cycle Time
This parameter is guaranteed but not tested.
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH
POWER DISSIPATION CHARACTERISTICS VS. SPEED
DATA RETENTION WAVEFORM
CE1 VCC – 0.2V or
CE2 0.2V, VIN VCC 0.2V
or VIN 0.2V
Symbol Parameter Temp erature
Range -8 -10 -12 -15 -20 -25 -35 45 -70 -100 Unit
Commercial 200 180 170 160 155 150 145 N/A 130 125 mA
Industrial N/A 190 180 170 160 155 150 N/A 145 140 mA
Military N/A N/A 180 170 160 155 150 145 145 145 mA
Dynamic Operating Current*ICC
REV 1.6 3 of 17
FT6164
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Notes:
5. WE is HIGH for READ cycle.
6. CE1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with CE1
transition
LOW and CE2 transition HIGH.
8. Transition is measured ± 200 mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
TIMING WAVEFORM OF READ CYCLE NO. 1 (OEOE
OEOE
OE CONTROLLED)(5)
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tRC
Read Cycle
Time 8 1012152025354570100ns
tAA
Address
Access Time 8 1012152025354570100ns
tAC
Chip Enable
Access Time 8 1012152025354570100ns
tOH
Output Hold
from Address
Change
3333333333ns
tLZ
Chip Enable to
Output in Low Z 2222222222ns
tHZ
Chip Disable
to Output in
High Z
567881015203545ns
tOE
Output Enable
Low to Data
Valid
5679101318203545ns
tOLZ
Output Enable
Low to Low Z 2222222222ns
tOHZ
Output Enable
High to High Z 567991215203545ns
tPU
Chip Enable to
Power Up
Time
0000000000ns
tPD
Chip Disable
to Power Down
Time
8 101215202020253545ns
Symbol Parameter -8 -10 -12 -15 -20 -25 Unit
-35 -45 -70 -100
REV 1.6 4 of 17
FT6164
TIMINIG WAVERFORM OF READ CYCLE NO. 2 (ADDRESS CONTROLLED)(5,6)
TIMING WAVEFORM OF READ CYCLE NO. 3 (CECE
CECE
CE1, CE2 CONTROLLED)(5,7,10)
Notes:
9. READ Cycle Time is measured from the last valid address to the first
transitioning address.
10. Transitions caused by a chip enable control have similar delays
irrespective of whether CE1 or CE2 causes them.
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC Write Cycle Time8 1012152025354570100ns
tCW
Chip Enable
Time to End of
Write
6 7 8 12 15 18 25 33 50 70 ns
tAW
Address Valid to
End of Write 7 8 10 12 15 18 25 33 50 70 ns
tAS
Address Set-up
Time 0000000000ns
tWP
Write Pulse
Width 7 8 9 12 15 18 20 25 40 50 ns
tAH
Address Hold
Time 0000000000ns
tDW
Data Valid to
End of Write 6 7 8 9 111315203040 ns
tDH Date Hold Time0000000000ns
tWZ
Write Enable to
Output in High Z 677781014183040ns
tOW
Output Active
from End of
Write
3333333333ns
Symbol Parameter -8 -10 -12 -15 -20 -25 Unit
-35 -45 -70 -100
REV 1.6 5 of 17
FT6164
Notes:
11. CE1 and WE must be LOW, and CE 2 HIGH for WRITE cycle.
12. OE is LOW for this WRITE cycle to show t WZ and tOW.
13. If CE1 goes HIGH, or CE
2 goes LOW, simultaneously with WE HIGH,
the output remains in a high impedance state.
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CECE
CECE
CE CONTROLLED)(11)
14. Write Cycle Time is measured from the last valid address to the first
transitioning address.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WEWE
WEWE
WE CONTROLLED)(11)
REV 1.6 6 of 17
FT6164
Mode CECE
CECE
CE1CE2OEOE
OEOE
OE WEWE
WEWE
WE I/O Power
Standby H X X X High Z Standby
Standby X L X X High Z Standby
DOUT
Disabled L H H H High Z Active
Read L H L H DOUT Active
Write L H X L High Z Active
AC TEST CONDITIONS
Input Pulse Levels GND to 3.0V
Input Rise and Fall Times 3ns
Input Timing Reference Level 1.5V
Output Timing Reference Level 1.5V
Output Load See Figures 1 and 2
TRUTH TABLE
Figure 1. Output Load Figure 2. Thevenin Equivalent
* including scope and test fixture.
Note:
Because of the high speed of the FT6164/L, care must be taken when
testing this device; an inadequate setup can cause a normal functioning
part to be rejected as faulty. Long high-inductance leads that cause
supply bounce must be avoided by bringing the V
CC and ground planes
directly up to the contactor fingers. A 0.01 µF high frequency capacitor
is also required between V CC and ground. To avoid signal reflections,
proper termination must be used; for example, a 50 test environment
should be terminated into a 50 load with 1.73V (Thevenin Voltage) at
the comparator input, and a 116 resistor must be used in series with
DOUT to match 166 (Thevenin Resistance).
LCC (L5)
"LS" - SPECIAL PIN-OUT
LCC PIN CONFIGURATIONS
LCC (L6)LCC (L5)
"L" - STANDARD PIN-OUT
REV 1.6 7 of 17
FT6164
N/A = Not available
SELECTION GUIDE
The FT6164 is available in the following temperature, speed and package options. The FT 6164L is available only over
the military temperature range.
ORDERING INFORMATION
8 1012152025354570100
Plastic DIP (300 mil) -8PC -10PC -12PC -15PC -20PC -25PC -35PC N/A N/A N/A
Plastic DIP (600 m il) N/A N/A N/A N/A N/A N/A N/A N/A -70P6C -100P6C
Plastic S OJ -8JC -10JC -12JC -15JC -20JC -25JC -35JC N/A N/A N/A
Plastic SOP N/A N/A N/A N/A N/A N/A N/A N/A -70SNC -100SNC
Industrial Plastic DIP (300 mil) N/A -10PI -12PI -15PI -20PI -25PI -35PI N/A N/A N/A
Plastic DIP (600 m il) N/A N/A N/A N/A N/A N/A N/A N/A -70P6I -100P6I
Plastic SOJ N/A -10JI -12JI -15JI -20JI -25JI -35JI N/A N/A N/A
Plastic SOP N/A N/A N/A N/A N/A N/A N/A N/A -70SNI -100SNI
Speed (ns)
Temperature
Range Package
Commercial
FT6164 L XX XX
M5004
REV 1.6 8 of 17
FT6164
8 1012152025354570100
Side B razed DIP N/A N/A -12CM -15CM -20CM -25CM -35CM -45CM -70CM -100CM
CERDIP (300 mil) N/A N/A -12DM -15DM -20DM -25DM -35DM -45DM -70DM -100DM
CERDIP (600 mil) N/A N/A -12DWM -15DWM -20DWM -25DWM -35DWM -45DWM -70DWM -100DWM
CERPACK N/A N/A -12FM -15FM -20FM -25FM -35FM -45FM -70FM -100FM
28-Pin LCC N/A N/A -12LM -15LM -20LM -25LM -35LM -45LM -70LM -100LM
28-Pin LCC ** N/A N/A -12LSM -15LSM -20LSM -25LSM -35LSM -45LSM -70LSM -100LSM
32-Pin LCC N/A N/A -12L32M -15L32M -20L32M -25L32M -35L32M -45L32M -70L32M -100L32M
Side B razed DIP N/A N/A -12CMB -15CMB -20CMB -25CMB -35CMB -45CMB -70CMB -100CMB
CERDIP (300 mil) N/A N/A -12DMB -15DMB -20DMB -25DMB -35DMB -45DMB -70DMB -100DMB
CERDIP (600 mil) N/A N/A -12DWMB -15DWMB -20DWMB -25DWMB -35DWMB -45DWMB -70DWMB -100DWMB
CERPACK N/A N/A -12FMB -15FMB -20FMB -25FMB -35FMB -45FMB -70FMB -100FMB
28-Pin LCC N/A N/A -12LMB -15LMB -20LMB -25LMB -35LMB -45LMB -70LMB -100LMB
28-Pin LCC ** N/A N/A -12LSMB -15LSMB -20LSMB -25LSMB -35LSMB -45LSMB -70LSMB -100LSMB
32-Pin LCC N/A N/A -12L32MB -15L32MB -20L32MB -25L32MB -35L32MB -45L32MB -70L32MB -100L32MB
Military
Processed *
Speed (ns)
Military
Temperature
Temperature
Range Package
SELECTION GUIDE (continued)
* Military temperature range with MIL-STD-883 M5004
** SPECIAL PINOUT
N/A = Not available
REV 1.6 9 of 17
FT6164
Pkg #
# Pins
Symbol Min Max
A-0.225
b 0.014 0.026
b2 0.045 0.065
C 0.008 0.018
D-1.485
E 0.240 0.310
eA
e
L 0.125 0.200
Q 0.015 0.070
S1 0.005 -
S2 0.005 -
C5
28 (300 mil)
0.300 BSC
0.100 BSC
SIDE BRAZED DUAL IN-LINE PACKAGE (300 mils)
Pkg #
# Pins
Symbol Min Max
A-0.232
b 0.014 0.026
b2 0.045 0.065
C 0.008 0.018
D-1.490
E 0.500 0.610
eA
e
L 0.125 0.200
Q 0.015 0.060
S1 0.005 -
S2 0.005 -
C5-1
28 (600 mil)
0.600 BSC
0.100 BSC
SIDE BRAZED DUAL IN-LINE PACKAGE (600 mils)
REV 1.6 10 of 17
FT6164
α
CERDIP DUAL IN-LINE P ACKAGE
Pkg #
# Pins
Symbol Min Max
A - 0.232
b 0.014 0.026
b2 0.045 0.065
C 0.008 0.018
D - 1.490
E 0.500 0.610
eA
e
L 0.125 0.200
Q 0.015 0.060
S1 0.005 -
15°
D5-1
28 (600 mil)
0.600 B SC
0.100 B SC
α
CERDIP DUAL IN-LINE P ACKAGE
Pkg #
# P ins
Symbol Min Max
A - 0.225
b 0.014 0.026
b2 0.045 0.065
C 0.008 0.018
D - 1.485
E 0.240 0.310
eA
e
L 0.125 0.200
Q 0.015 0.060
S1 0.005 -
15°
D5-2
28 (300 mil)
0.300 BSC
0.100 BSC
REV 1.6 11 of 17
FT6164
Pkg #
# Pins
Symbol Min Max
A 0.120 0.148
A1 0.078 -
b 0.014 0.020
C 0.007 0.011
D 0.700 0.730
e
E
E1 0.292 0.300
E2
Q0.025-
J5
28 (300 mil)
0.050 BSC
0.267 BSC
0.335 BSC
SOJ SMALL OUTLINE IC PACKAGE
Pkg #
# Pins
Symbol Min Max
A 0.060 0.090
b 0.015 0.022
c 0.004 0.009
D-0.730
E 0.330 0.380
e
k 0.005 0.018
L 0.250 0.370
Q 0.026 0.045
S-0.085
S1 0.005 -
F4
28
0.050 BSC
CERPACK CERAMIC FLAT PACKAGE
REV 1.6 12 of 17
FT6164
Pkg #
# Pins
Symbol Min Max
A 0.060 0.075
A1 0.050 0.065
B1 0.022 0.028
D 0.442 0.458
D1
D2
D3 - 0.458
E 0.540 0.560
E1
E2
E3 - 0.558
e
h
j
L 0.045 0.055
L1 0.045 0.055
L2 0.075 0.095
ND
NE
L6
32
0.300 BSC
0.150 BSC
0.020 REF
7
9
0.400 BSC
0.200 BSC
0.050 BSC
0.040 REF
RECTANGULAR LEADLESS CHIP CARRIER
RECTANGULAR LEADLESS CHIP CARRIER
Pkg #
# Pins
Symbol Min Max
A 0.060 0.075
A1 0.050 0.065
B1 0.022 0.028
D 0.342 0.358
D1
D2
D3 - 0.358
E 0.540 0.560
E1
E2
E3 - 0.558
e
h
j
L 0.045 0.055
L1 0.045 0.055
L2 0.075 0.095
ND
NE
0.020 REF
5
9
0.400 B SC
0.200 B SC
0.050 B SC
0.040 REF
L5
28
0.200 B SC
0.100 B SC
REV 1.6 13 of 17
FT6164
Pkg #
# Pins
Symbol Min Max
A 0.090 0.200
A1 0.000 0.070
b 0.014 0.020
b2 0.015 0.065
C 0.008 0.012
D 1.380 1.480
E1 0.485 0.550
E 0.600 0.625
e
eB
L 0.100 0.200
15°
P6
28 (600 mil)
0.100 BSC
0.600 TYP
PLASTIC DUAL IN-LINE PACKAGE (600 mils)
α
Pkg #
# Pins
Symbol Min Max
A-0.210
A1 -
b 0.014 0.023
b2 0.045 0.070
C 0.008 0.014
D 1.345 1.400
E1 0.270 0.300
E 0.300 0.380
e
eB - 0.430
L 0.115 0.150
15°
0.100 BSC
P5
28 (300 mil)
α
PLASTIC DUAL IN-LINE PACKAGE (300 mils)
REV 1.6 14 of 17
FT6164
Pkg #
# Pins
Symbol Min Max
A 0.060 0.075
A1 0.050 0.065
B1 0.022 0.028
D 0.442 0.458
D1
D2
D3 - 0.458
E 0.540 0.560
E1
E2
E3 - 0.558
e
h
j
L 0.045 0.055
L1 0.045 0.055
L2 0.075 0.095
ND
NE
L6
32
0.300 BSC
0.150 BSC
0.020 REF
7
9
0.400 BSC
0.200 BSC
0.050 BSC
0.040 REF
RECTANGULAR LEADLESS CHIP CARRIER
RECTANGULAR LEADLESS CHIP CARRIER
Pkg #
# Pins
Symbol Min Max
A 0.060 0.075
A1 0.050 0.065
B1 0.022 0.028
D 0.342 0.358
D1
D2
D3 - 0.358
E 0.540 0.560
E1
E2
E3 - 0.558
e
h
j
L 0.045 0.055
L1 0.045 0.055
L2 0.075 0.095
ND
NE
0.020 REF
5
9
0.400 B SC
0.200 B SC
0.050 B SC
0.040 REF
L5
28
0.200 B SC
0.100 B SC
REV 1.6 15 of 17
FT6164
Ashley Crt, Henley,
Marlborough, Wilts, SN8 3RH UK
Tel: +44(0)1264 731200
Fax:+44(0)1264 731444
E-mail
sales@forcetechnologies.co.uk
www.forcetechnologies.co.uk
Life Support Applications
Force Technologies products are not designed for use in life support appliances, devices or systems where malfunction of a Force Technologies
product can reasonably be expected to result in a personal injury. Force Technologies customers using or selling Force Technologies products
for use in such applications do so at their own risk and agree to fully indemnify Force Technologies for any damages resulting from such
improper use or sale.
All trademarks acknowledged Copyright Force Technologies Ltd 2010
Unless otherwise stated in this SCD/Data sheet , Force Technologies Ltd reserve the right to make changes, without notice, in the products, Includ
-ing circuits, cells and/or software, described or contained herein in order to improve design and/or performance. Force Technologies resumes no
responsibility or liability for the use of any of these products, conveys no licence or any title under patent, copyright, or mask work to these
products, and makes no representation or warranties that these products are free f rom patent, copyright or mask work infringement, unless
otherwise specified.
REV 1.6 16 of 17
REVISIONS
DOCUMENT NUMBER: SRAM115
DOCUMENT TITLE: FT6164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS
REV. ISSUE
DATE ORIG. OF
CHANGE DESCRIPTION OF CHANGE
OR 1997 M.S New Data Sheet
1.1 Oct-05 M.S Data sheet review
1.2 Jun-06 M.S Added 28-pin ceramic DIP
1.3 Aug-06 M.S Added Lead Free Designation
1.4 Aug-06 M.S Added "LS" - SPECIAL PIN-OUT
1.5 Aug-06 M.S Updated SOJ package information
1.6 Jun-07 M.S Corrected SOP package details
REV 1.6 17 of 17