(SEE REVERSE SIDE)
R1
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
NPN SILICON TRANSISTOR
JEDEC TO-18 CASE
DATA SHEE
T
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
BCY58 BCY59 UNITS
Collector-Base Voltage VCBO 32 45 V
Collector-Emitter Voltage VCEO 32 45 V
Emitter-Base Voltage VEBO 7.0 V
Collector Current IC 100 mA
Collector Current (Peak) ICM 200 mA
Base Current (Peak) IBM 200 mA
Power Dissipation PD 340 mW
Power Dissipation(TC=25°C) PD 1.0 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +200 °C
Thermal Resistance ΘJA 450 °C/W
Thermal Resistance ΘJC 150 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB= Rated VCBO 10 nA
ICBO V
CB= Rated VCBO, TA=150°C 10 µA
IEBO V
EB=5.0V 10 nA
BVCBO I C=10µA (BCY58) 32 V
BVCBO I C=10µA (BCY59) 45 V
BVCEO I C=2.0mA (BCY58) 32 V
BVCEO I C=2.0mA (BCY59) 45 V
BVEBO I E=1.0µA 7.0 V
VCE(SAT) I
C=10mA, IB=250µA 0.35 V
VCE(SAT) I
C=100mA, IB=2.5mA 0.70 V
VBE(SAT) I
C=10mA, IB=250µA 0.60 0.85 V
VBE(SAT) I
C=100mA, IB=2.5mA 0.75 1.20 V
BCY58-VII BCY58-VIII BCY58-IX BCY58-X
BCY59-VII BCY59-VIII BCY59-IX BCY59-X
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX
hFE V
CE=5.0V, IC=10µA 20 TYP 20 40 100
hFE V
CE=5.0V, IC=2.0mA 120 220 180 310 250 460 380 630
hFE V
CE=1.0V, IC=10mA 80 120 400 160 630 240 1000
hFE V
CE=1.0V, IC=100mA 40 45 60 60
BCY58/BCY59 NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS Continued
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
fT V
CE=5.0V, IC=10mA, f=100MHz 150 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 5.0 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz 15 pF
NF VCE=5.0V, IC=200µA, RS=2kΩ, f=1.0kHz, B=200Hz 10 dB
ton V
CC=10V, IC=10mA, IB1=-IB2=1.0mA 85 150 ns
td V
CC=10V, IC=10mA, IB1=-IB2=1.0mA 35 ns
tr V
CC=10V, IC=10mA, IB1=-IB2=1.0mA 50 ns
toff V
CC=10V, IC=10mA, IB1=-IB2=1.0mA 450 800 ns
ts V
CC=10V, IC=10mA, IB1=-IB2=1.0mA 400 ns
tf V
CC=10V, IC=10mA, IB1=-IB2=1.0mA 80 ns
ton V
CC=10V, IC=100mA, IB1=-IB2=10mA 55 150 ns
td V
CC=10V, IC=100mA, IB1=-IB2=10mA 5.0 ns
tr V
CC=10V, IC=100mA, IB1=-IB2=10mA 50 ns
toff V
CC=10V, IC=100mA, IB1=-IB2=10mA 450 800 ns
ts V
CC=10V, IC=100mA, IB1=-IB2=10mA 250 ns
tf V
CC=10V, IC=100mA, IB1=-IB2=10mA 200 ns
TO-18 PACKAGE - MECHANICAL OUTLINE
R1
B
D
C
E
F
LEAD #1
LEAD #2
LEAD #3
G
H
IJ
A
45°
MIN MAX MIN MAX
A (DIA) 0.209 0.230 5.31 5.84
B (DIA) 0.178 0.195 4.52 4.95
C - 0.030 - 0.76
D 0.170 0.210 4.32 5.33
E 0.500 - 12.70 -
F (DIA) 0.016 0.019 0.41 0.48
G (DIA)
H
I 0.036 0.046 0.91 1.17
J 0.028 0.048 0.71 1.22
TO-18 (REV: R1)
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
0.100 2.54
0.050 1.27
