2N916 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)45 I(C) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (oC)200o I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.50 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)10m @I(B) (A) (Test Condition)1.0m h(fe) Min. SS Current gain.3.0 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)15