LMH6647MFX/NOPB - Texas Instruments

100k 1M 10M 100M 200M

Gain (dB)

Frequency (Hz)

Phase (°)

-2

-4

100

25°C

85°C

-40°C

PHASE

GAIN

100k 1M 10M 200M

Frequency (Hz)

-4

-2

Gain (dB)

Phase (°)

100

AV = +2

AV = +5

AV = +10

AV = +1

GAIN

PHASE

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LMH6645

LMH6646

LMH6647

SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

LMH664x 2.7 V, 650 μA, 55 MHz, Rail-to-Rail Input and Output Amplifiers

with Shutdown Option

1 Features 3 Description

The LMH6645 (single) and LMH6646 (dual), rail-to-

1• (VS= 2.7V, TA= 25°C, RL= 1kΩto V+/2, AV= +1. rail input and output voltage feedback amplifiers, offer

Typical Values Unless Specified. high speed (55 MHz), and low voltage operation (2.7

•−3dB BW 55 MHz V) in addition to micro-power shutdown capability

• Supply Voltage Range 2.5 V to 12 V (LMH6647, single).

• Slew Rate 22 V/μsInput common mode voltage range exceeds either

• Supply Current 650 μA/channel supply by 0.3 V, enhancing ease of use in multitude

of applications where previously only inferior devices

• Output Short Circuit Current 42 mA could be used. Output voltage range extends to

• Linear Output Current ±20 mA within 20 mV of either supply rails, allowing wide

• Input Common Mode Voltage 0.3 V Beyond Rails dynamic range especially in low voltage applications.

Even with low supply current of 650 μA/amplifier,

• Output Voltage Swing 20 mV from Rails output current capability is kept at a respectable ±20

• Input Voltage Noise 17 nV/√Hz mA for driving heavier loads. Important device

• Input Current Noise 0.75 pA/√Hz parameters such as BW, Slew Rate and output

current are kept relatively independent of the

2 Applications operating supply voltage by a combination of process

enhancements and design architecture.

• Active Filters

• High Speed Portable Devices Device Information(1)

• Multiplexing Applications (LMH6647) PART NUMBER PACKAGE BODY SIZE (NOM)

• Current Sense Buffer SOT-23 (5) 2.90 mm × 1.60 mm

LMH6645

• High Speed Transducer Amp SOIC (8) 4.90 mm × 3.91 mm

SOIC (8) 4.90 mm × 3.91 mm

LMH6646 VSSOP (8) 3.00 mm × 3.00 mm

SOT-23 (6) 2.92 mm × 1.60 mm

LMH6647 SOIC (8) 4.90 mm × 3.91 mm

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

Closed Loop Frequency Response

Frequency Response for Various AVfor Various Temperature

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LMH6645

LMH6646

LMH6647

SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

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Table of Contents

8.2 Functional Block Diagram....................................... 18

1 Features.................................................................. 18.3 Feature Description................................................. 19

2 Applications ........................................................... 18.4 Device Functional Modes........................................ 20

3 Description............................................................. 19 Application and Implementation ........................ 22

4 Revision History..................................................... 29.1 Application Information............................................ 22

5 Description (continued)......................................... 39.2 Typical Application.................................................. 22

6 Pin Configuration and Functions......................... 310 Power Supply Recommendations ..................... 23

7 Specifications......................................................... 411 Layout................................................................... 24

7.1 Absolute Maximum Ratings ..................................... 411.1 Layout Guidelines ................................................. 24

7.2 Handling Ratings....................................................... 411.2 Layout Example .................................................... 24

7.3 Recommended Operating Conditions....................... 412 Device and Documentation Support................. 25

7.4 Thermal Information.................................................. 412.1 Documentation Support ........................................ 25

7.5 Electrical Characteristics 2.7 V................................. 512.2 Related Links ........................................................ 25

7.6 Electrical Characteristics 5V .................................... 712.3 Trademarks........................................................... 25

7.7 Electrical Characteristics ±5V .................................. 912.4 Electrostatic Discharge Caution............................ 25

7.8 Typical Performance Characteristics ...................... 11 12.5 Glossary................................................................ 25

8 Detailed Description............................................ 18 13 Mechanical, Packaging, and Orderable

8.1 Overview................................................................. 18 Information........................................................... 25

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision C (April 2013) to Revision D Page

• Added, updated, or renamed the following sections: Device Information Table, Pin Configuration and Functions,

Application and Implementation;Power Supply Recommendations;Layout;Device and Documentation Support;

Mechanical, Packaging, and Ordering Information................................................................................................................. 1

Changes from Revision B (April 2013) to Revision C Page

• Changed layout of National Data Sheet to TI format ............................................................................................................. 1

Product Folder Links: LMH6645 LMH6646 LMH6647

V+

N/C

-IN

+IN

V-

OUTPUT

N/C

OUTPUT

V-

+IN

V+

-IN

OUT B

4 5

OUT A

-IN A

+IN A

V-

V+

-IN B

+IN B

V+

4 5

N/C

-IN

+IN

V-

OUTPUT

N/C

OUTPUT

V-

+IN

V+

-IN

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

5 Description (continued)

In portable applications, the LMH6647 provides shutdown capability while keeping the turn-off current to less

than 50 μA. Both turn-on and turn-off characteristics are well behaved with minimal output fluctuations during

transitions. This allows the part to be used in power saving mode, as well as multiplexing applications. Miniature

packages (SOT-23, VSSOP-8, and SOIC-8) are further means to ease the adoption of these low power high

speed devices in applications where board area is at a premium.

6 Pin Configuration and Functions

SOT-23-5 (LMH6645) SOIC-8 (LMH6645) SOIC-8 and VSSOP-8 (LMH6646)

Package DBV05A Package D08A Packages D08A and DGK08A

Top View Top View Top View

SOT-23-6 (LMH6647) SOIC-8 (LMH6647)

Package DBV06A Package D08A

Top View Top View

Pin Functions

NUMBER I/O DESCRIPTION

NAME LMH6645 LMH6646 LMH6647

DBV05A D08A DGK08A DBV06A D08A

-IN 4 2 4 2 I Inverting input

+IN 3 3 3 3 I Non-inverting input

-IN A 2 I Inverting Input Channel A

+IN A 3 I Non-inverting input Channel A

-IN B 6 I Inverting input Channel B

+IN B 5 I Non-inverting input Channel B

N/C 1,5,8 1,5 –– No Connection

OUTPUT 1 6 1 6 O Output

OUT A 1 O Output Channel A

OUT B 7 O Output Channel B

SD 5 8 I Shutdown

V-2 4 4 2 4 I Negative Supply

V+ 5 7 8 6 7 I Positive Supply

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7 Specifications

7.1 Absolute Maximum Ratings (1)(2)

over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT

Output short circuit duration See (3) and (4)

VIN differential ±2.5 V

V++0.8,

Voltage at input/output pins V

V−−0.8

Supply voltage (V+- V−) 12.6 V

Junction temperature(5) +150

Infrared or Convection (20 sec) 235 °C

Soldering Information Wave Soldering (10 sec) 260

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics.

(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in

exceeding the maximum allowed junction temperature of 150°C.

(4) Output short circuit duration is infinite for VS< 6 V at room temperature and below. For VS> 6 V, allowable short circuit duration is 1.5

ms.

(5) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD= (TJ(MAX) - TA)/ RθJA. All numbers apply for packages soldered directly onto a PC board.

7.2 Handling Ratings MIN MAX UNIT

Tstg Storage temperature range −65 +150 °C

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all 2000

pins(1)

V(ESD) Electrostatic discharge V

Machine model (MM)(2) 200

(1) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. Human body

model, 1.5 kΩin series with 100pF.

(2) JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process. Machine model, 0 Ω

in series with 200 pF.

7.3 Recommended Operating Conditions(1)

over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT

Supply Voltage (V+– V−) 2.5 12 V

Temperature Range(2) −40 +85 °C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics.

(2) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD = (TJ(MAX) - TA)/ RθJA . All numbers apply for packages soldered directly onto a PC board.

7.4 Thermal Information LMH6645 LMH6646 LMH6647

THERMAL METRIC(1) SOT-23 SOIC-8 VSSOP-8 SOT-23 SOIC-8 UNIT

5 PINS 8 PINS 8 PINS 8 PINS 6 PINS 8 PINS

RθJA Junction-to-ambient thermal resistance 265 190 190 235 265 190 °C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

7.5 Electrical Characteristics 2.7 V

Unless otherwise specified, all limits ensured for at TJ= 25°C, V+= 2.7V, V−= 0V, VCM = VO= V+/2, and Rf= 2kΩ, and RL=

1kΩto V+/2. PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

AV= +1, VOUT = 200 mVPP,

BW −3dB BW 40 55 MHz

VCM = 0.7 V

f = 100 kHz 17

enInput-referred voltage noise nV/√Hz

f = 1 kHz 25

f = 100 kHz 0.75

inInput-referred current noise pA/√Hz

f = 1 kHz 1.20

Cross-talk rejection f = 5MHz, Receiver:

CT Rej. 47 dB

(LMH6646 only) Rf= Rg= 510 Ω, AV= +2

AV=−1, VO= 2 VPP

SR Slew rate 15 22 V/μs

See (3),(4)

Turn-on time

TON 250 ns

(LMH6647 only)

Turn-off time

TOFF 560 ns

(LMH6647 only)

Shutdown threshold

THSD IS≤50μA 1.95 2.30 V

(LMH6647 only)

Shutdown pin input current

ISD See (5) −20 μA

(LMH6647 only)

−3 ±1 3

VOS Input offset voltage 0V ≤VCM ≤2.7 V mV

-40°C ≤TJ≤85°C −4 4

TC VOS Input offset average drift See (6) ±5 μV/°C

0.40 2

VCM = 2.5 V (5) -40°C ≤TJ≤85°C 2.2

IBInput bias current μA

−0.68 −2

VCM = 0.5 V (5) -40°C ≤TJ≤85°C −2.2

IOS Input offset current 0 V ≤VCM ≤2.7 V 1 500 nA

Common mode input

RIN 3 MΩ

resistance

Common mode input

CIN 2 pF

capacitance

−0.5 −0.3

-40°C ≤TJ≤85°C −0.1

Input common-mode

CMVR CMRR ≥50dB V

voltage range 3.0 3.2

-40°C ≤TJ≤85°C 2.8

VCM Stepped from 0 V to 2.7 V 46 77

Common mode rejection

CMRR dB

ratio VCM Stepped from 0 V to 1.55 V 58 76

76 87

AVOL Large signal voltage gain VO= 0.35 V to 2.35 V dB

-40°C ≤TJ≤85°C 74

RL= 1k to V+/2 2.55 2.66

Output swing high V

RL= 10k to V+/2 2.68

VORL= 1k to V+/2 40 150

Output swing low mV

RL= 10k to V+/2 20

(1) All limits are ensured by testing or statistical analysis.

(2) Typical values represent the most likely parametric norm.

(3) Slew rate is the average of the rising and falling slew rates.

(4) ensured based on characterization only.

(5) Positive current corresponds to current flowing into the device.

(6) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

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Electrical Characteristics 2.7 V (continued)

Unless otherwise specified, all limits ensured for at TJ= 25°C, V+= 2.7V, V−= 0V, VCM = VO= V+/2, and Rf= 2kΩ, and RL=

1kΩto V+/2. PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

Sourcing to V−43

VID = 200mV (7)(8)

ISC Output short circuit current mA

Sinking to V+42

VID =−200mV (7)(8)

IOUT Output current VOUT = 0.5V from rails ±20 mA

V+= 2.7V to 3.7V or

PSRR Power supply rejection ratio 75 83 dB

V−= 0V to −1V

Normal Operation 650 1250

Supply current

ISμA

(per channel) Shutdown Mode (LMH6647 only) 15 50

(7) Short circuit test is a momentary test.

(8) Output short circuit duration is infinite for VS< 6V at room temperature and below. For VS> 6V, allowable short circuit duration is 1.5ms.

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

7.6 Electrical Characteristics 5V

Unless otherwise specified, all limits ensured for at TJ= 25°C, V+= 5V, V−= 0V, VCM = VO= V+/2, and Rf= 2kΩ, and RL=

1kΩto V+/2. PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

BW −3dB BW AV= +1, VOUT = 200 mVPP 40 55 MHz

f = 100kHz 17

enInput-referred voltage noise nV/√Hz

f = 1kHz 25

f = 100kHz 0.75

inInput-referred current noise pA/√Hz

f = 1kHz 1.20

Cross-talk rejection f = 5MHz, Receiver:

CT Rej. 47 dB

(LMH6646 only) Rf= Rg= 510Ω, AV= +2

AV=−1, VO= 2 VPP

SR Slew rate 15 22 V/μs

See (3),(4)

Turn-on time

TON 210 ns

(LMH6647 only)

Turn-off time

TOFF 500 ns

(LMH6647 only)

Shutdown threshold IS≤50μA

THSD 4.25 4.60 V

(LMH6647 only)

Shutdown pin input current See (5)

ISD −20 μA

(LMH6647 only) 0V ≤VCM ≤5V −3 ±1 3

VOS Input offset voltage mV

-40°C ≤TJ≤85°C −4 4

TC VOS Input offset average drift See (6) ±5 μV/C

VCM = 4.8V(5) +0.36 +2

-40°C ≤TJ≤85°C −2.2

IBInput bias current μA

VCM = 0.5V(5) −0.68 −2

-40°C ≤TJ≤85°C −2.2

IOS Input offset current 0V ≤VCM ≤5V 1 500 nA

Common mode input

RIN 3 MΩ

resistance

Common mode input

CIN 2 pF

capacitance

−0.5 −0.3

-40°C ≤TJ≤85°C −0.1

Input common-mode

CMVR CMRR ≥50dB V

voltage range 5.3 5.5

-40°C ≤TJ≤85°C 5.1

VCM Stepped from 0V to 5V 56 82

Common mode rejection

CMRR dB

ratio VCM Stepped from 0V to 3.8V 66 85

76 85

AVOL Large signal voltage gain VO= 1.5V to 3.5V dB

-40°C ≤TJ≤85°C 74

(1) All limits are ensured by testing or statistical analysis.

(2) Typical values represent the most likely parametric norm.

(3) Slew rate is the average of the rising and falling slew rates.

(4) ensured based on characterization only.

(5) Positive current corresponds to current flowing into the device.

(6) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

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Electrical Characteristics 5V (continued)

Unless otherwise specified, all limits ensured for at TJ= 25°C, V+= 5V, V−= 0V, VCM = VO= V+/2, and Rf= 2kΩ, and RL=

1kΩto V+/2. PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

RL= 1k to V+/2 4.80 4.95

Output swing high V

RL= 10k to V+/2 4.98

VORL= 1k to V+/2 50 200

Output swing low mV

RL= 10k to V+/2 20

Sourcing to V−55

VID = 200mV (7)(8)

ISC Output short circuit current mA

Sinking to V+53

VID =−200mV (7)(8)

IOUT Output current VOUT = 0.5V From rails ±20 mA

PSRR Power supply rejection ratio V+= 5V to 6V or V−= 0V to −1V 75 95 dB

Normal Operation 700 1400

Supply current (per

ISμA

channel) Shutdown Mode (LMH6647 only) 10 50

(7) Short circuit test is a momentary test.

(8) Output short circuit duration is infinite for VS< 6V at room temperature and below. For VS> 6V, allowable short circuit duration is 1.5ms.

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7.7 Electrical Characteristics ±5V

Unless otherwise specified, all limits ensured for at TJ= 25°C, V+= 5V, V−=−5V, VCM = VO= 0V, Rf= 2kΩ, and RL= 1kΩto

GND. PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

BW −3dB BW AV= +1, VOUT = 200 mVPP 40 55 MHz

f = 100 kHz 17

enInput-referred voltage noise nV/√Hz

f = 1 kHz 25

f = 100 kHz 0.75

inInput-referred current noise pA/√Hz

f = 1 kHz 1.20

Cross-talk rejection f = 5MHz, Receiver:

CT Rej. 47 dB

(LMH6646 only) Rf= Rg= 510 Ω, AV= +2

SR Slew rate AV=−1, VO= 2 VPP(3) 15 22 V/μs

Turn-on time

TON 200 ns

(LMH6647 only)

Turn-off time

TOFF 700 ns

(LMH6647 only)

Shutdown threshold

THSD IS≤50 μA 4.25 4.60 V

(LMH6647 only)

Shutdown pin input current

ISD See (4) −20 μA

(LMH6647 only)

−3 ±1 3

VOS Input offset voltage −5V ≤VCM ≤5 V mV

-40°C ≤TJ≤85°C −4 4

TC VOS Input offset average drift See (5) ±5 μV/°C

+0.40 +2

VCM = 4.8 V (4) -40°C ≤TJ≤85°C +2.2

IBInput bias current μA

−0.65 −2

VCM =−4.5 V (4) -40°C ≤TJ≤85°C −2.2

IOS Input offset current −5V ≤VCM ≤5 V 3 500 nA

Common mode input

RIN 3 MΩ

resistance

Common mode input

CIN 2 pF

capacitance

−5.5 −5.3

-40°C ≤TJ≤85°C −5.1

Input common-mode

CMVR CMRR ≥50dB V

voltage range 5.3 5.5

-40°C ≤TJ≤85°C 5.1

VCM Stepped from −5 V to 5 V 60 84

Common mode rejection

CMRR dB

ratio VCM Stepped from −5 V to 3.5 V 66 104

76 85

AVOL Large signal voltage gain VO=−2 V to 2 V dB

-40°C ≤TJ≤85°C 74

(1) All limits are ensured by testing or statistical analysis.

(2) Typical values represent the most likely parametric norm.

(3) Slew rate is the average of the rising and falling slew rates.

(4) Positive current corresponds to current flowing into the device.

(5) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

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Electrical Characteristics ±5V (continued)

Unless otherwise specified, all limits ensured for at TJ= 25°C, V+= 5V, V−=−5V, VCM = VO= 0V, Rf= 2kΩ, and RL= 1kΩto

GND. PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

RL= 1 kΩ4.70 4.92

Output swing high V

RL= 10 kΩ4.97

VORL= 1 kΩ −4.93 −4.70

Output swing low V

RL= 10 kΩ −4.98

Sourcing to V−66

VID = 200 mV(6)(7)

ISC Output short circuit current mA

Sinking to V+61

VID =−200 mV(6)(7)

IOUT Output current VOUT = 0.5V from rails ±20 mA

PSRR Power supply rejection ratio V+= 5 V to 6 V or V−=−5 V to −6 V 76 95 dB

Normal Operation 725 1600

Supply current (per

ISμA

channel) Shutdown Mode (LMH6647 only) 10 50

(6) Short circuit test is a momentary test.

(7) Output short circuit duration is infinite for VS< 6V at room temperature and below. For VS> 6V, allowable short circuit duration is 1.5ms.

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VOUT (VPP)

100k 1M 10M

0.1

Frequency (Hz)

123456

-70

-65

-60

-55

-50

-45

-40

-35

-30

THD (dBc)

VOUT (VPP)

VS = ±2.5 V VS = ±5 V

100k 1M 10M 100M

Frequency (Hz)

Gain (dB)

Phase (°)

-20

100

PHASE

GAIN 85°C

-40°C

85°C

123 4 567

VOUT (VPP)

-80

-75

-70

-65

-60

-55

-50

THD (dBc)

VS = ±2.5 V VS = ±5 V

100k 1M 10M 100M 200M

Gain (dB)

Frequency (Hz)

Phase (°)

-2

-4

100

25°C

85°C

-40°C

PHASE

GAIN

100k 1M 10M 200M

Frequency (Hz)

-4

-2

Gain (dB)

Phase (°)

100

AV = +2

AV = +5

AV = +10

AV = +1

GAIN

PHASE

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7.8 Typical Performance Characteristics

At TJ= 25°C. Unless otherwise specified.

VS= ±5 V RL= 1 kΩ

AV= + 1 VS= ±2.5 V RL= 1k

VOUT = 200 mVpp

Figure 2. Frequency Response for Various AV

Figure 1. Closed Loop Frequency Response

for Various Temperature

RL= 500 Ωf = 100 KHz AV= +2

VS= ±2.5 V RL= 2k

Figure 4. THD vs. Output Swing

Figure 3. Open Loop Gain/Phase vs. Frequency

for Various Temperature

RL= 500 Ωf = 1 MHz AV= +2 RL= 500 ΩAV= +2 VS= ±5 V

Rf= Rg= 2K

Figure 5. THD vs. Output Swing Figure 6. Output Swing vs. Frequency

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0500 1.5k

RL (:)

100

10k

VOUT from V+ (mV)

2.7 V

5 V

10 V

2.5k

RL (:)

100

10k

VOUT from V+ (mV)

2.7 V

5 V

10 V

0500 1.5k 2.5k

.01 .1 110 100

ISINK (mA)

0.01

0.1

1.0

VOUT from V- (V)

-40°C

85°C

VOUT from V+ (V)

.01 .1 110 100

ISOURCE (mA)

0.01

0.1

1.0

25°C

-40°C

85°C

10 100 1k 10k 100k

FREQUENCY (Hz)

100

1000

en (nV/ Hz)

in (pA/ Hz)

10.00

1.00

0.10

VOLTAGE

CURRENT

01 2 3 4

100

150

200

250

Settling Time (ns)

Step Amplitude (VPP)

±0.1%

±1%

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Typical Performance Characteristics (continued)

At TJ= 25°C. Unless otherwise specified.

VS= ±2.5 V RL = 500 ΩCL= 13 pF

AV= -1

Figure 7. Settling Time vs. Step Size Figure 8. Noise vs. Frequency

VS= 10 V VS= 10 V

Figure 9. VOUT from V+vs. ISOURCE Figure 10. VOUT from V−vs. ISINK

T = 25°C AV= +1 T = -40°C AV= +1

Figure 11. Output Swing from V+vs. RL(tied to VS/2) Figure 12. Output Swing from V+vs. RL(Tied to VS/2)

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Closed Loop Gain

100

10k

CL (pF)

ts (± 1% Settling with CL) (ns)

100

10k

12345

10k 100k 1M 10M 200M

Frequency (Hz)

0.02

0.1

100

500

ZOUT (:)

1.0

0500 1.5k 25k

RL (:)

100

10k

VOUT from V- (mV)

2.7 V

5 V

10 V

0500 1.5k 2.5k

RL (:)

100

10k

VOUT from V- (mV)

2.7 V

5 V

10 V

0500 1.5k 2.5k

RL (:)

100

10k

VOUT from V+ (mV)

2.7 V

5 V

10 V

0RL (:)

100

10k

VOUT from V- (mV)

2.7 V

5 V

10 V

500 1.5k 2.5k

LMH6645

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LMH6647

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

Typical Performance Characteristics (continued)

At TJ= 25°C. Unless otherwise specified.

T = 25°C AV= +1

T = 85°C AV= +1

Figure 14. Output Swing from V−vs. RL(Tied to VS/2)

Figure 13. Output Swing from V+vs. RL(Tied to VS/2)

T = 85°C AV= +1

T = 40°C AV= +1

Figure 16. Output Swing from V−vs. RL(Tied to VS/2)

Figure 15. Output Swing from V−vs. RL(Tied to VS/2)

VS= ±2.5 V AV= +1

VS= +5 V 200 mVpp STEP 30% OVERSHOOT

Figure 18. ZOUT vs. Frequency

Figure 17. Cap Load Tolerance and Setting Time

vs. Closed Loop Gain

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12345678910 12

-0.3

-0.25

-0.2

-0.15

-0.1

-0.05

0.05

0.1

0.15

0.2

VOS (mV)

VS (V)

-40°C

25°C

85°C

0246810 12

-0.25

-0.2

-0.15

-0.1

-0.05

0.05

0.1

0.15

0.2

0.25

VOS (mV)

VOUT (V)

25°C

-40°C

85°C

-2

1k 10k 100k 1M 10M

Frequency (Hz)

100

CT (rej) (dB)

1k 10k 100k 1M 10M

Frequency (Hz)

CMRR (dB)

110

PSRR (dB)

100 1k 10k 100k 1M

Frequency (Hz)

100

10M

+PSRR

-PSRR

LMH6645

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

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Typical Performance Characteristics (continued)

At TJ= 25°C. Unless otherwise specified.

VS= ±2.5V RF= 10 kΩRG= 1 kΩVS= 5 V

Figure 19. PSRR vs. Frequency Figure 20. CMRR vs. Frequency

Receive CH.: AV= +2 VS= ±5 V N = 19k UNITS σ= 4.6 mV

Rf= Rg= 510

Figure 21. Crosstalk Rejection vs. Frequency Figure 22. VOS Distribution

(Output to Output, LMH6646)

VS= 10 V RL= 10 kΩto VS/2

VCM = 0.5 V

Figure 24. VOS vs. VOUT (a Typical Unit)

Figure 23. VOS vs. VS(a Typical Unit)

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-0.5 00.5 11.5 22.5 3

VCM (V)

-1

-0.8

-0.6

-0.4

-0.2

0.2

0.4

0.6

IB (µA)

85°C

-40°C

25°C

25°C -40°C

85°C

-5 5

VCM (V)

-1

-0.8

-0.6

-0.4

-0.2

0.2

0.4

0.6

IB (µA)

-1 13

85°C

-40°C

25°C

-40°C 25°C

85°C

-3

-2

VCM (V)

-0.1

0.1

0.2

0.3

0.5

0.6

VOS (mV)

0 2 46810 12

25°C

85°C

-40°C

0.4

-1 VCM (V)

-0.1

0.1

0.2

0.3

0.4

0.5

0.6

VOS (mV)

0123456

-40°C

25°C

85°C

-0.5

VCM (V)

0.1

0.2

0.4

0.5

0.6

VOS (mV)

0 0.5 1 1.5 2 2.5 3

VS = 2.7V

25°C

85°C

40°C

0246810 12

-0.4

-0.3

-0.2

-0.1

0.1

0.2

0.4

VOS (mV)

VOUT (V)

25°C

-40°C

85°C

0.3

-2

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LMH6647

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

Typical Performance Characteristics (continued)

At TJ= 25°C. Unless otherwise specified.

VS= 10 V RL= 1 kΩto VS/2 VS= 2.7 V

Figure 25. VOS vs. VOUT (a Typical Unit) Figure 26. VOS vs. VCM (a Typical Unit)

VS= 5 V VS= 10 V

Figure 27. VOS vs. VCM (a Typical Unit) Figure 28. VOS vs. VCM (a Typical Unit)

VS= ±5 V

VS= 2.7 V

Figure 30. IBvs. VCM

Figure 29. IBvs. VCM

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-0.5 0.5 1.5 2.5 3.5 4.5 5.5

-0.1

0.1

0.2

0.3

0.4

0.6

0.7

0.8

0.9

IS (mA)

VSHUTDOWN (V)

85°C

-40°C

25°C

VS = 5V

-6 -4 -2 024 6

-0.1

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

IS (mA)

VSHUTDOWN (V)

85°C

-40°C

25°C

12468 10 11 12

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

IS (mA) (per channel)

VS (V)

85°C

-40°C

25°C

3579

-0.15 0.35 0.85 1.35 1.85 2.35 2.85

-0.1

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

IS (mA)

VSHUTDOWN (V)

85°C

-40°C

25°C

1246810 11 12

-0.7

-0.68

-0.66

-0.64

-0.62

-0.60

-0.58

-0.56

-0.54

-0.52

-0.50

IB (µA)

VS (V)

85°C

-40°C

25°C

3579

-7 -5 -3 -1 1357

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

0.95

IS (mA) (per channel)

VCM (V)

85°C

-40°C

25°C

LMH6645

LMH6646

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

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Typical Performance Characteristics (continued)

At TJ= 25°C. Unless otherwise specified.

VCM = 0.2 V VS= ±5 V

Figure 31. IBvs. VSFigure 32. ISvs. VCM

VS= 2.7 V

VS= ±5 V VCM = 0.2 V

Figure 34. ISvs. VSHUTDOWN (LMH6647)

Figure 33. IS(mA) vs. Vs(V)

VS= ±5 V

VS= 5 V

Figure 36. ISvs. VSHUTDOWN (LMH6647)

Figure 35. ISvs. VSHUTDOWN (LMH6647)

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1 V/DIV

400 ns/DIV

INPUT

OUTPUT

0.2 V/DIV

40 ns/DIV

0.2 V/DIV

40 ns/DIV

-3.5 -1.5 1.5 3.5

VSHUTDOWN (V)

100

1000

IVCC (µA)

-0.5 2.5-2.5 0.5

SHUTDOWN

PIN CURRENT

IVCC

85°C

25°C

-40°C

85°C

-40°C

25°C

-0.1

-1

-10

-100

ISHUTDOWN PIN (P$)

40 mV/DIV

20 ns/DIV

LMH6645

LMH6646

LMH6647

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

Typical Performance Characteristics (continued)

At TJ= 25°C. Unless otherwise specified.

VS= ±5 V RL= 1kΩAV= +1

VS= ±2.5 V VOUT = 0.2 Vpp

Figure 38. Small Signal Step Response

Figure 37. Shutdown Pin and Supply Current

vs. Shutdown Voltage (LMH6647)

VS= 5 V RL= 1 kΩVOUT = 1 Vpp

VS= 2.7 V RL= 1 kΩVOUT = 1 Vpp AV= -1

AV= +1

Figure 40. Large Signal Step Response

Figure 39. Large Signal Step Response

AV= +2 RL= 1 kΩ

VS= ±2.5 V Rf= Rg= 2 kΩ

Figure 41. Output Overload Recovery

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NON-INVERTING

INPUT

INVERTING

INPUT

200-400:

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

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8 Detailed Description

8.1 Overview

The LMH664x family is based on proprietary VIP10 dielectrically isolated bipolar process.

This device family architecture features the following:

• Complimentary bipolar devices with exceptionally high ft(∼8 GHz) even under low supply voltage (2.7 V) and

low Collector bias current.

• Rail-to-Rail input which allows the input common mode voltage to go beyond either rail by about 0.5 V

typically.

• A class A-B “turn-around” stage with improved noise, offset, and reduced power dissipation compared to

similar speed devices (patent pending).

• Common Emitter push-pull output stage capable of 20 mA output current (at 0.5 V from the supply rails) while

consuming only ∼700 μA of total supply current per channel. This architecture allows output to reach within

mV of either supply rail at light loads.

• Consistent performance from any supply voltage (2.7 V to 10 V) with little variation with supply voltage for the

most important specifications (BW, SR, IOUT, for example)

8.2 Functional Block Diagram

Figure 42. LMH6647 Equivalent Input in Shutdown Mode

During shutdown, the input stage has an equivalent circuit as shown below in Figure 42.

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2 V/DIV 2.00 µs/DIV

VOUT

10k

LMH6647

VIN

SHUTDOWN

INPUT

VOUT

V-

LMH6645

LMH6646

LMH6647

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

8.3 Feature Description

8.3.1 LMH6647 Micro-power Shutdown

To keep the output at or near ground during shutdown when there is no other device to hold the output low, a

switch (transistor) could be used to shunt the output to ground. Figure 43 shows a circuit where a NPN bipolar is

used to keep the output near ground (∼80 mV):

Figure 43. Active Pull-Down Schematic

Figure 44 shows the output waveform.

Figure 44. Output Held Low by Active Pull-Down Circuit

NOTE

For normal operation, tie the SD pin to V−.

If bipolar transistor power dissipation is not tolerable, the switch could be by a N-channel enhancement mode

MOSFET.

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

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8.4 Device Functional Modes

The LMH6647 can be shutdown to save power and reduce its supply current to less than 50 μA ensured, by

applying a voltage to the SD pin. The SD pin is “active high” and needs to be tied to V−for normal operation. This

input is low current (< 20 μA, 4 pF equivalent capacitance) and a resistor to V−(≤20 kΩ) will result in normal

operation. Shutdown is ensured when SD pin is 0.4V or less from V+at any operating supply voltage and

temperature.

In the shutdown mode, essentially all internal device biasing is turned off in order to minimize supply current flow

and the output goes into Hi-Z (high impedance) mode. Complete device Turn-on and Turn-off times vary

considerably relative to the output loading conditions, output voltage, and input impedance, but is generally

limited to less than 1μs (see tables for actual data).

As seen in Figure 42 in shutdown, there may be current flow through the internal diodes shown, caused by input

potential, if present. This current may flow through the external feedback resistor and result in an apparent output

signal. In most shutdown applications the presence of this output is inconsequential. However, if the output is

“forced” by another device such as in a multiplexer, the other device will need to conduct the current described in

order to maintain the output potential.

The total input common mode voltage range, which extends from below V−to beyond V+, is covered by both an

NPN and a PNP stage. The NPN stage is switched on whenever the input is less than 1.2 V from V+and the

PNP stage covers the rest of the range. In terms of the input voltage, there is an overlapping region where both

stages are processing the input signal. This region is about 0.5 V from beginning to the end. As far as the device

application is concerned, this transition is a transparent operation. However, keep in mind that the input bias

current value and direction will depend on which input stage is operating (see Figure 29). For low distortion

applications, it is best to keep the input common mode voltage from crossing this transition point. Low gain

settling applications, which generally encounter larger peak-to-peak input voltages, could be configured as

inverting stages to eliminate common mode voltage fluctuations.

In terms of the output, when the output swing approaches either supply rail, the output transistor will enter a

quasi-saturated state. A subtle effect of this operational region is that there is an increase in supply current in this

state (up to 1 mA). The onset of Quasi-saturation region is a function of output loading (current) and varies from

100 mV at no load to about 1 V when output is delivering 20 mA, as measured from supplies. Both input

common mode voltage and output voltage level affect the supply current (see Figure 32).

With 2.7V supplies and a common mode input voltage range that extends beyond either supply rail, the

LMH664x family is well suited to many low voltage/low power applications. Even with 2.7 V supplies, the -3dB

BW (@ AV= +1) is typically 55 MHz with a tested limit of 45 MHz. Production testing guarantees that process

variations will not compromise speed.

This device family is designed to avoid output phase reversal. With input over-drive, the output is kept near the

supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage). Figure 45, below,

shows the input and output voltage when the input voltage significantly exceeds the supply voltages.

The output does not exhibit any phase reversal as some op amps do. However, if the input voltage range is

exceeded by more than a diode drop beyond either rail, the internal ESD protection diodes will start to conduct.

The current flow in these ESD diodes should be externally limited.

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INPUT OUTPUT

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

Device Functional Modes (continued)

Figure 45 demonstrates that the output is well behaved and there are no spikes or glitches due to the switching.

Switching times are approximately around 500 ns based on the time when the output is considered “valid”.

Figure 45. Input/Output Shown with Exceeded Input CMVR

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LMH6647

LMH664

1/5

74HC04

1/5

74HC04

SELECT

INPUT

INPUT A

INPUT B

2k 2k

2.7V

SHUTDOWN

LMH6645

LMH6646

LMH6647

SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

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9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The LMH664x family is well suited to many low voltage/low power applications and is designed to avoid output

phase reversal. Figure 45, for example, depicts the Input/Output Shown with Exceeded Input CMVR and

functions as a 2:1 MUX operating on a single 2.7-V power supply by utilizing the shutdown feature of the

LMH6647.

9.2 Typical Application

Figure 46. 2:1 MUX Operating off a 2.7V Single Supply

9.2.1 Design Requirements

This application requires fast, glitch-less transition between selected channels. The LMH6647 turn on and turn off

times are 250 ns and 560 ns respectively. Transition between channels is devoid of any excessive glitches.

9.2.2 Detailed Design Procedure

In this application, the LMH6647 output pins are directly tied to each other. The shutdown pin of each LMH6647

is driven in-opposite sense of the other (that is, “Low” on 1st LMH6647 with “High” on the 2nd LMH6647, and

vice versa). When shutdown is invoked, the device output enters Hi-Z state, while the alternate LMH6647 is

being powered on simultaneously. This way, the shutdown function serves the dual purpose of allowing only the

input associated with device which is not in shutdown to be selected and to appear at the output.

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1 V/DIV 1 µs/DIV

VOUT

SELECT

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

Typical Application (continued)

9.2.3 Application Curve

Figure 47 shows the MUX output when selecting between a 1 MHz sine and a 250 KHz triangular waveform.

Figure 47. 2:1 MUX Output

10 Power Supply Recommendations

The LMH664x device family can operate off a single supply or with dual supplies. The input CM capability of the

parts (CMVR) extends covers the entire supply voltage range for maximum flexibility. Supplies should be

decoupled with low inductance, often ceramic, capacitors to ground less than 0.5 inches from the device pins.

The use of ground plane is recommended, and as in most high speed devices, it is advisable to remove ground

plane close to device sensitive pins such as the inputs.

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11 Layout

11.1 Layout Guidelines

Generally, a good high-frequency layout will keep power supply and ground traces away from the inverting input

and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and

possible circuit oscillations. For more information, see Application Note OA-15, Frequent Faux Pas in Applying

Wideband Current Feedback Amplifiers (SNOA367).

Another important parameter in working with high speed/high performance amplifiers is the component values

selection. Choosing large valued external resistors will affect the closed loop behavior of the stage because of

the interaction of these resistors with parasitic capacitances. These capacitors could be inherent to the device or

a by-product of the board layout and component placement. Either way, keeping the resistor values lower will

diminish this interaction. On the other hand, choosing very low value resistors could load down nodes and will

contribute to higher overall power dissipation.

11.2 Layout Example

Figure 48. Layer2 Silk (SOT-23 Board Layout) Figure 49. Layer1 Silk (SOT-23 Board Layout)

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SNOS970D –JUNE 2001–REVISED NOVEMBER 2014

12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

For related documentation, see the following:

•Absolute Maximum Ratings for Soldering (SNOA549)

•Frequent Faux Pas in Applying Wideband Current Feedback Amplifiers, Application Note OA-15 (SNOA367)

•Semiconductor and IC Package Thermal Metrics (SPRA953)

12.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community

resources, tools and software, and quick access to sample or buy.

Table 1. Related Links

TECHNICAL TOOLS & SUPPORT &

PARTS PRODUCT FOLDER SAMPLE & BUY DOCUMENTS SOFTWARE COMMUNITY

LMH6645 Click here Click here Click here Click here Click here

LMH6646 Click here Click here Click here Click here Click here

LMH6647 Click here Click here Click here Click here Click here

12.3 Trademarks

All trademarks are the property of their respective owners.

12.4 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

12.5 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

www.ti.com 23-Aug-2017

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LMH6645MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66

45MA

LMH6645MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66

45MA

LMH6645MF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A68A

LMH6645MFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A68A

LMH6646MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66

46MA

LMH6646MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66

46MA

LMH6646MM NRND VSSOP DGK 8 1000 TBD Call TI Call TI -40 to 85 A70A

LMH6646MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A70A

LMH6646MMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A70A

LMH6647MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66

47MA

LMH6647MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66

47MA

LMH6647MF NRND SOT-23 DBV 6 1000 TBD Call TI Call TI -40 to 85 A69A

LMH6647MF/NOPB ACTIVE SOT-23 DBV 6 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A69A

LMH6647MFX/NOPB ACTIVE SOT-23 DBV 6 3000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A69A

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

PACKAGE OPTION ADDENDUM

www.ti.com 23-Aug-2017

Addendum-Page 2

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LMH6645MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LMH6645MF/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMH6645MFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMH6646MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LMH6646MM VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMH6646MM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMH6646MMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMH6647MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LMH6647MF SOT-23 DBV 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMH6647MF/NOPB SOT-23 DBV 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMH6647MFX/NOPB SOT-23 DBV 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

PACKAGE MATERIALS INFORMATION

www.ti.com 8-Apr-2017

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LMH6645MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0

LMH6645MF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0

LMH6645MFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0

LMH6646MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0

LMH6646MM VSSOP DGK 8 1000 210.0 185.0 35.0

LMH6646MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0

LMH6646MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0

LMH6647MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0

LMH6647MF SOT-23 DBV 6 1000 210.0 185.0 35.0

LMH6647MF/NOPB SOT-23 DBV 6 1000 210.0 185.0 35.0

LMH6647MFX/NOPB SOT-23 DBV 6 3000 210.0 185.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 8-Apr-2017

Pack Materials-Page 2

www.ti.com

PACKAGE OUTLINE

TYP

0.22

0.08

0.25

3.0

2.6

2X 0.95

1.9

1.45 MAX

TYP

0.15

0.00

5X 0.5

0.3

TYP

0.6

0.3

TYP

1.9

3.05

2.75

1.75

1.45

(1.1)

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

0.2 C A B

INDEX AREA

PIN 1

GAGE PLANE

SEATING PLANE

0.1 C

SCALE 4.000

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MAX

ARROUND 0.07 MIN

ARROUND

5X (1.1)

5X (0.6)

(2.6)

(1.9)

2X (0.95)

(R0.05) TYP

4214839/C 04/2017

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

SYMM

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

PKG

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

DEFINED

EXPOSED METAL

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

EXPOSED METAL

www.ti.com

EXAMPLE STENCIL DESIGN

(2.6)

(1.9)

2X(0.95)

5X (1.1)

5X (0.6)

(R0.05) TYP

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

7. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

SYMM

PKG

www.ti.com

PACKAGE OUTLINE

TYP

0.22

0.08

0.25

3.0

2.6

2X 0.95

1.9

1.45 MAX

TYP

0.15

0.00

5X 0.5

0.3

TYP

0.6

0.3

TYP

1.9

3.05

2.75

1.75

1.45

(1.1)

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

0.2 C A B

INDEX AREA

PIN 1

GAGE PLANE

SEATING PLANE

0.1 C

SCALE 4.000

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MAX

ARROUND 0.07 MIN

ARROUND

5X (1.1)

5X (0.6)

(2.6)

(1.9)

2X (0.95)

(R0.05) TYP

4214839/C 04/2017

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

SYMM

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

PKG

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

DEFINED

EXPOSED METAL

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

EXPOSED METAL

www.ti.com

EXAMPLE STENCIL DESIGN

(2.6)

(1.9)

2X(0.95)

5X (1.1)

5X (0.6)

(R0.05) TYP

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

7. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

SYMM

PKG

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LMH6647MA LMH6647MA/NOPB LMH6647MAX LMH6647MAX/NOPB LMH6647MF LMH6647MF/NOPB

LMH6647MFX LMH6647MFX/NOPB