S-5712 Series
www.sii-ic.com
LOW VOLTAGE OPERATION
BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
© Seiko Instruments Inc., 2010-2012 Rev.4.2_01
Seiko Instruments Inc. 1
The S-5712 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low
current consumption.
The output voltage changes when the S-5712 Series detects the intensity level of flux density. Using the S-5712 Series with
a magnet makes it possible to detect the open / close state in various devices.
High-density mounting is possible by using the small SOT-23-3 or the super-small SNT-4A package. Due to its low voltage
operation and low current consumption, the S-5712 Series is suitable for battery-operated portable devices. Due to its high-
accuracy magnetic characteristics, the S-5712 Series can make operation’s dispersion in the system combined with magnet
smaller.
Caution This product is intended to use in general electronic devices such as consumer electronics, office
equipment, and communications devices. Before using the product in medical equipment or automobile
equipment includin g car au dio, keyless entry and engine control unit, con t act to SII is in dispensable.
Features
• Pole detection*1: Detection of both poles, S pole or N pole
• Detection logic for magnetism*1: Active "L", active "H"
• Output form*1: Nch open-drain output, CMOS output
• Magnetic sensitivity*1: BOP = 3.0 mT typ.
B
OP = 4.5 mT typ.
• Operating cycle (current consumption)*1: Product with both poles detection
t
CYCLE = 5.70 ms (12.0 μA) typ.
t
CYCLE = 50.50 ms (2.0 μA) typ.
Product with S pole or N pole detection
t
CYCLE = 6.05 ms (6.0 μA) typ.
t
CYCLE = 50.85 ms (1.4 μA) typ.
• Power supply voltage range: VDD = 1.6 V to 3.5 V
• Operation temperature range: Ta = −40°C to +85°C
• Lead-free (Sn 100%), halogen-free*2
*1. The option can be selected.
*2. Refer to " Product Name Structure" for details.
Applications
• Mobile phone (flip type, slide type, etc.)
• Notebook PC
• Digital video camera
• Plaything, portable game
• Home appliance
Packages
• SOT-23-3
• SNT-4A
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
2
Block Diagrams
1. Nch open-drain output product
OUT
VDD
VSS
*1 *1
Sleep / Awake logic
Chopping
stabilized am plifi er
*1. Parasitic diode
Figure 1
2. CMOS output product
OUT
VDD
VSS
*1
Sleep / Awake logic
*1
Chopping
stabilized am plifi er
*1
*1. Parasitic diode
Figure 2
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 3
Product Name Structure
1. Product name
S-5712 x x x x x - xxxx U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package name (abbreviation) and packing specifications*1
M3T1: SOT-23-3, Tape
I4T1: SNT-4A, Tape
Magnetic sensitivity
1: BOP = 3.0 mT typ.
2: BOP = 4.5 mT typ.
Detection logic for magnetism
L: Active "L"
H: Active "H"
Pole detection
D: Detection of both poles
S: Detection of S pole
N: Detection of N pole
Output form
N: Nch open-drain output
C: CMOS output
Operating cycle
A: tCYCLE = 50.50 ms typ.
(Product with both poles detection)
t
CYCLE = 50.85 ms typ.
(Product with S pole or N pole detection)
C: tCYCLE = 5.70 ms typ.
(Product with both poles detection)
t
CYCLE = 6.05 ms typ.
(Product with S pole or N pole detection)
*1. Refer to the tape drawing.
2. Packages
Table 1 Package Drawing Codes
Package Name Dimension Tape Reel Land
SOT-23-3 MP003-C-P-SD MP003-C-C-SD MP003-Z-R-SD −
SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
4
3. Product name list
3. 1 SOT-23-3
3. 1. 1 Nch open-drain output product
Table 2
Product Name Operating Cycle
(tCYCLE) Output Form Pole Detection Detection Logic
for Magnetism Magnetic Sensitivity
(BOP)
S-5712ANDL1-M3T1U 50.50 ms typ. Nch open-drain output Both poles Active "L" 3.0 mT typ.
S-5712ANDL2-M3T1U 50.50 ms typ. Nch open-drain output Both poles Active "L" 4.5 mT typ.
S-5712ANSL1-M3T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 3.0 mT typ.
S-5712ANSL2-M3T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 4.5 mT typ.
Remark Please contact our sales office for products other than the above.
3. 1. 2 CMOS output product
Table 3
Product Name Operating Cycle
(tCYCLE) Output Form Pole Detection Detection Logic
for Magnetism Magnetic Sensitivity
(BOP)
S-5712ACDL1-M3T1U 50.50 ms typ. CMOS output Both poles Active "L" 3.0 mT typ.
S-5712ACDL2-M3T1U 50.50 ms typ. CMOS output Both poles Active "L" 4.5 mT typ.
S-5712ACDH1-M3T1U 50.50 ms typ. CMOS output Both poles Active "H" 3.0 mT typ.
S-5712ACDH2-M3T1U 50.50 ms typ. CMOS output Both poles Active "H" 4.5 mT typ.
S-5712ACSL1-M3T1U 50.85 ms typ. CMOS output S pole Active "L" 3.0 mT typ.
S-5712ACSL2-M3T1U 50.85 ms typ. CMOS output S pole Active "L" 4.5 mT typ.
S-5712ACNL1-M3T1U 50.85 ms typ. CMOS output N pole Active "L" 3.0 mT typ.
S-5712ACNL2-M3T1U 50.85 ms typ. CMOS output N pole Active "L" 4.5 mT typ.
Remark Please contact our sales office for products other than the above.
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 5
3. 2 SNT-4A
3. 2. 1 Nch open-drain output product
Table 4
Product Name Operating Cycle
(tCYCLE) Output Form Pole Detection Detection Logic
for Magnetism Magnetic Sensitivity
(BOP)
S-5712ANDL1-I4T1U 50.50 ms typ. Nch open-drain output Both poles Active "L" 3.0 mT typ.
S-5712ANDL2-I4T1U 50.50 ms typ. Nch open-drain output Both poles Active "L" 4.5 mT typ.
S-5712ANSL1-I4T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 3.0 mT typ.
S-5712ANSL2-I4T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 4.5 mT typ.
Remark Please contact our sales office for products other than the above.
3. 2. 2 CMOS output product
Table 5
Product Name Operating Cycle
(tCYCLE) Output Form Pole Detection Detection Logic
for Magnetism Magnetic Sensitivity
(BOP)
S-5712ACDL1-I4T1U 50.50 ms typ. CMOS output Both poles Active "L" 3.0 mT t yp.
S-5712ACDL2-I4T1U 50.50 ms typ. CMOS output Both poles Active "L" 4.5 mT t yp.
S-5712ACDH1-I4T1U 50.50 ms typ. CMOS output Both poles Active "H" 3.0 mT typ.
S-5712ACDH2-I4T1U 50.50 ms typ. CMOS output Both poles Active "H" 4.5 mT typ.
S-5712ACSL1-I4T1U 50.85 ms typ. CMOS output S pole Active "L" 3.0 mT typ.
S-5712ACSL2-I4T1U 50.85 ms typ. CMOS output S pole Active "L" 4.5 mT typ.
S-5712ACSH1-I4T1U 50.85 ms typ. CMOS output S pole Active "H" 3.0 mT typ.
S-5712ACSH2-I4T1U 50.85 ms typ. CMOS output S pole Active "H" 4.5 mT typ.
S-5712ACNL1-I4T1U 50.85 ms typ. CMOS output N pole Active "L" 3.0 mT typ.
S-5712ACNL2-I4T1U 50.85 ms typ. CMOS output N pole Active "L" 4.5 mT typ.
S-5712CCDL1-I4T1U 5.70 ms typ. CMOS output Both poles Active "L" 3.0 mT typ.
S-5712CCDH1-I4T1U 5.70 ms typ. CMOS output Both poles Active "H" 3.0 mT typ.
Remark Please contact our sales office for products other than the above.
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
6
Pin Configurations
1. SOT-23-3
Table 6
Pin No. Symbol Pin Description
1 VSS GND pin
2 VDD Power supply pin
3 OUT Output pin
23
1
Top view
Figure 3
2. SNT-4A
Table 7
Pin No. Symbol Pin Description
1 VDD Power supply pin
2 VSS GND pin
3 NC*1 No connection
4 OUT Output pin
*1. The NC pin is electrically open.
The NC pin can be connected to the VDD pin or the VSS pin.
4
32
1
Top view
Figure 4
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 7
Absolute Maximum Ratings
Table 8 (Ta = +25°C unless otherwise specified)
Item Symbol Absolute Maximum Rating Unit
Power supply voltage VDD VSS − 0.3 to VSS + 7.0 V
Output current IOUT ±1.0 mA
Nch open-drain output product VSS − 0.3 to VSS + 7.0 V
Output voltage CMOS output product VOUT VSS − 0.3 to VDD + 0.3 V
SOT-23-3 430*1 mW
Power dissipation SNT-4A PD 300*1 mW
Operation ambient temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Power Dissipation (P
D
) [mW]
Ambient Temperature (Ta) [°C]
050 100 150
0
400
600
200
SNT-4A
SOT-23-3
Figure 5 Power Dissipation of Package (When Mounted on Board)
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
8
Electrical Characteristics
1. Product with both poles detection
1. 1 S-5712AxDxx
Table 9
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Circuit
Power supply voltage VDD − 1.60 1.85 3.50 V −
Current consumption IDD Average value − 2.0 4.0 μA 1
Nch open-drain
output product Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output voltage VOUT CMOS output
product Output t r ansist or Pch,
IOUT = −0.5 mA VDD −
0.4 − − V 3
Leakage current ILEAK Nch open-drain output product
Output transistor Nch, VOUT = 3.5 V − − 1 μA 4
Awake mode time tAW − − 0.10 − ms −
Sleep mode time tSL − − 50.40 − ms −
Operating cycle tCYCLE t
AW + tSL − 50.50 100.00 ms −
1. 2 S-5712CxDxx
Table 10
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Circuit
Power supply voltage VDD − 1.60 1.85 3.50 V −
Current consumption IDD Average value − 12.0 22.0 μA 1
Nch open-drain
output product Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output voltage VOUT CMOS output
product Output t r ansist or Pch,
IOUT = −0.5 mA VDD −
0.4 − −
V 3
Leakage current ILEAK Nch open-drain output product
Output transistor Nch, VOUT = 3.5 V − − 1 μA 4
Awake mode time tAW − − 0.10 − ms −
Sleep mode time tSL − − 5.60 − ms −
Operating cycle tCYCLE t
AW + tSL − 5.70 12.00 ms −
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 9
2. Product with S pole and N pole detection
2. 1 S-5712AxSxx, S-5712AxNxx
Table 11
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Circuit
Power supply voltage VDD − 1.60 1.85 3.50 V −
Current consumption IDD Average value − 1.4 3.0 μA 1
Nch open-drain
output product Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output voltage VOUT CMOS output
product Output transistor Pch,
IOUT = −0.5 mA VDD −
0.4 − − V 3
Leakage current ILEAK Nch open-drain output product
Output transistor Nch, VOUT = 3.5 V − − 1 μA 4
Awake mode time tAW − − 0.05 − ms −
Sleep mode time tSL − − 50.80 − ms −
Operating cycle tCYCLE t
AW + tSL − 50.85 100.00 ms −
2. 2 S-5712CxSxx, S-5712CxNxx
Table 12
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Circuit
Power supply voltage VDD − 1.60 1.85 3.50 V −
Current consumption IDD Average value − 6.0 11.0 μA 1
Nch open-drain
output product Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output transistor Nch,
IOUT = 0.5 mA − − 0.4 V 2
Output voltage VOUT CMOS output
product Output transistor Pch,
IOUT = −0.5 mA VDD −
0.4 − −
V 3
Leakage current ILEAK Nch open-drain output product
Output transistor Nch, VOUT = 3.5 V − − 1 μA 4
Awake mode time tAW − − 0.05 − ms −
Sleep mode time tSL − − 6.00 − ms −
Operating cycle tCYCLE t
AW + tSL − 6.05 12.00 ms −
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
10
Magnetic Characteristics
1. Product with both poles detection
1. 1 BOP = 3.0 mT typ.
Table 13
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
S pole BOPS − 1.4 3.0 4.0 mT 5
Operating point*1 N pole BOPN − −4.0 −3.0 −1.4 mT 5
S pole BRPS − 1.1 2.2 3.7 mT 5
Release point*2 N pole BRPN − −3.7 −2.2 −1.1 mT 5
S pole BHYSS B
HYSS = BOPS − BRPS − 0.8 − mT 5
Hysteresis width*3 N pole BHYSN B
HYSN = |BOPN − BRPN| − 0.8 − mT 5
1. 2 BOP = 4.5 mT typ.
Table 14
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
S pole BOPS − 2.5 4.5 6.0 mT 5
Operating point*1 N pole BOPN − −6.0 −4.5 −2.5 mT 5
S pole BRPS − 2.0 3.5 5.5 mT 5
Release point*2 N pole BRPN − −5.5 −3.5 −2.0 mT 5
S pole BHYSS B
HYSS = BOPS − BRPS − 1.0 − mT 5
Hysteresis width*3 N pole BHYSN B
HYSN = |BOPN − BRPN| − 1.0 − mT 5
2. Product with S pole detection
2. 1 BOP = 3.0 mT typ.
Table 15
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operating point*1 S pole BOPS − 1.4 3.0 4.0 mT 5
Release point*2 S pole BRPS − 1.1 2.2 3.7 mT 5
Hysteresis width*3 S pole BHYSS B
HYSS = BOPS − BRPS − 0.8 − mT 5
2. 2 BOP = 4.5 mT typ.
Table 16
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operating point*1 S pole BOPS − 2.5 4.5 6.0 mT 5
Release point*2 S pole BRPS − 2.0 3.5 5.5 mT 5
Hysteresis width*3 S pole BHYSS B
HYSS = BOPS − BRPS − 1.0 − mT 5
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 11
3. Product with N pole detection
3. 1 BOP = 3.0 mT typ.
Table 17
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operating point*1 N pole BOPN − −4.0 −3.0 −1.4 mT 5
Release point*2 N pole BRPN − −3.7 −2.2 −1.1 mT 5
Hysteresis width*3 N pole BHYSN B
HYSN = |BOPN − BRPN| − 0.8 − mT 5
3. 2 BOP = 4.5 mT typ.
Table 18
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operating point*1 N pole BOPN − −6.0 −4.5 −2.5 mT 5
Release point*2 N pole BRPN − −5.5 −3.5 −2.0 mT 5
Hysteresis width*3 N pole BHYSN B
HYSN = |BOPN − BRPN| − 1.0 − mT 5
*1. BOPN, BOPS: Operating points
BOPN and BOPS are the values of magnetic flux densit y when the output volt age (VOUT) is inverted after the magnetic flux
density applied to the S-5712 Series by the magnet (N pole or S pole) is increased (the magnet is moved closer).
Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status.
*2. BRPN, BRPS: Release points
BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) is inverted after the magnetic flux
density applied to the S-5712 Series by the magnet (N pole or S pole) is decreased (the magnet is moved further away).
Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status.
*3. BHYSN, BHYSS: Hysteresis widths
BHYSN and BHYSS are the dif ference between BOPN and BRPN, and BOPS and BRPS, respectively.
Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
12
Test Circuits
S-5712
Series
VDD
VSS
OUT
A R
*1
100 kΩ
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 6 Test Circuit 1
S-5712
Series
VDD
VSS
OUT A
V
Figure 7 Test Circuit 2
S-5712
Series
VDD
VSS
OUT A
V
Figure 8 Test Circuit 3
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 13
S-5712
Series
VDD
VSS
OUT A
V
Figure 9 Test Circuit 4
S-5712
Series
VDD
VSS
OUT
V
R
*1
100 kΩ
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 10 Test Circuit 5
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
14
Standard Circuit
S-5712
Series
VDD
VSS
OUT
C
IN
R
*1
100 k
Ω
0.1
μ
F
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 11
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 15
Operation
1. Direction of applied magnetic flux
The S-5712 Series detects the f lux density which is vertical t o t he marking surface.
In product with detection of both poles, the out put voltage (VOUT) is inverted when the S pole or N pole is moved closer to
the marking surface.
In product with detection of the S pole, the output voltage (VOUT) is inverted when the S pole is moved closer to the
marking surface.
In product with detection of the N pole, the output voltage (VOUT) is inverted when the N pole is moved closer to the
marking surface.
Figure 12 and Figure 13 show the direction in which magnetic flux is being applied.
1. 1 SOT-23-3 1. 2 SNT-4A
Marking surface
S
N
Marking surface
S
N
Figure 12 Figure 13
2. Position of Hall sensor
Figure 14 and Figure 15 show the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surf ace and the chip surface of a package.
2. 1 SOT-23-3
1
Top view
2 3
0.7 mm (typ.)
The center of Hall sens or;
in this φ 0.3 mm
2. 2 SNT-4A
Top view
14
23
0.16 mm (typ.)
The center of Hall sensor;
in this φ 0.3 mm
Figure 14 Figure 15
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
16
3. Basic operation
The S-5712 Series changes the output voltage level (VOUT) according to the level of the magnetic flux density (N pole
or S pole) applied by a magnet.
The following explains the operation when the magnetism detection logic is active "L".
3. 1 Product with both poles detection
When the magnetic flux density vertical to the marking surface exceeds B OPN or BOPS after the S pole or N pole of
a magnet is moved closer to the marking surface of the S-5712 Series, VOUT changes from "H" t o "L". When the S
pole or N pole of a magnet is moved further away from the marking surface of the S-5712 Series and the magnetic
flux density is lower than BRPN or BRPS, VOUT changes from "L" to "H".
Figure 16 shows the relationship between the magnetic density and VOUT.
V
OUT
0
B
OPN
B
RPN
B
RPS
B
OPS
B
HYSS
B
HYSN
H
L
Flux densit y (B)
N pole S pole
Figure 16
3. 2 Product with S pole detection
When the magnetic flux density vertical to the marking surface exceeds BOPS after the S pole of a magnet is
moved closer to the marking surface of the S-5712 Series, VOUT changes from "H" to "L". When the S pole of a
magnet is moved further away from the marking surface of the S-5712 Series and the magnetic flux density is
lower than BRPS, VOUT changes from "L" to "H".
Figure 17 shows the relationship between the magnetic density and VOUT.
VOUT
0 BRPS BOPS
BHYSS
H
L
Flux densit y (B)
N pole S pole
Figure 17
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 17
3. 3 Product with N pole detection
When the magnetic flux density vertical to the marking surface exceeds BOPN after the N pole of a magnet is
moved closer to the marking surface of the S-5712 Series, VOUT changes from "H" to "L". When the N pole of a
magnet is moved further away from the marking surface of the S-5712 Series and the magnetic flux density is
lower than BRPN, VOUT changes from "L" to "H".
Figure 18 shows the relationship between the magnetic density and VOUT.
V
OUT
0
B
OPN
B
RPN
B
HYSN
H
L
Flux densit y (B)
N pole S pole
Figure 18
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
18
Precautions
• If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feed-
through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
• Note that the IC may malfunction if the power supply voltage rapidly changes.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and
distortion during mounting the IC on a board or handle aft er mount ing.
• SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including
this IC of patents owned by a third party.
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
Rev.4.2_01 S-5712 Series
Seiko Instruments Inc. 19
Marking Specifications
1. SOT-23-3
(1) to (3): Product code (Refer t o Product name vs. Product code.)
(4): Lot number
23
1
Top view
(1) (2) (3) (4)
Product name vs. Product code
1. 1 Nch open-drain output product
Product Code
Product Name (1) (2) (3)
S-5712ANDL1-M3T1U X A B
S-5712ANDL2-M3T1U X A C
S-5712ANSL1-M3T1U X A J
S-5712ANSL2-M3T1U X A K
1. 2 CMOS output product Product Code
Product Name (1) (2) (3)
S-5712ACDL1-M3T1U X B B
S-5712ACDL2-M3T1U X B C
S-5712ACDH1-M3T1U X B F
S-5712ACDH2-M3T1U X B G
S-5712ACSL1-M3T1U X B J
S-5712ACSL2-M3T1U X B K
S-5712ACNL1-M3T1U X B R
S-5712ACNL2-M3T1U X B S
LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC
S-5712 Series Rev.4.2_01
Seiko Instruments Inc.
20
2. SNT-4A
(1) to (3): Product code (Refer to Product name vs. Product code.)
1
2
4
3
Top view
(1) (2) (3)
Product name vs. Product code
2. 1 Nch open-drain output product
Product Code
Product Name (1) (2) (3)
S-5712ANDL1-I4T1U X A B
S-5712ANDL2-I4T1U X A C
S-5712ANSL1-I4T1U X A J
S-5712ANSL2-I4T1U X A K
2. 2 CMOS output product Product Code
Product Name (1) (2) (3)
S-5712ACDL1-I4T1U X B B
S-5712ACDL2-I4T1U X B C
S-5712ACDH1-I4T1U X B F
S-5712ACDH2-I4T1U X B G
S-5712ACSL1-I4T1U X B J
S-5712ACSL2-I4T1U X B K
S-5712ACSH1-I4T1U X B N
S-5712ACSH2-I4T1U X B O
S-5712ACNL1-I4T1U X B R
S-5712ACNL2-I4T1U X B S
S-5712CCDL1-I4T1U X F B
S-5712CCDH1-I4T1U X F F
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
No. MP003-C-P-SD-1.0
MP003-C-P-SD-1.0
SOT233-C-PKG Dimensions
2.9±0.2
0.95±0.1
1.9±0.2
+0.1
-0.06
0.16
0.4±0.1
1
23
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
No. MP003-C-C-SD-2.0
MP003-C-C-SD-2.0
SOT233-C-Carrier Tape
1.4±0.2
0.23±0.1
4.0±0.1
2.0±0.1
4.0±0.1
ø1.5 +0.1
-0
ø1.0
3.2±0.2
Feed direction
1
23
+0.25
-0
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
QTY. 3,000
No. MP003-Z-R-SD-1.0
MP003-Z-R-SD-1.0
SOT233-C-Reel
ø13±0.2
12.5max.
9.2±0.5
Enlarged drawing in the central part
1.2±0.04
0.65
0.2±0.05
0.48±0.02
0.08
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-4.0
No. PF004-A-P-SD-4.0
+0.05
-0.02
12
3
4
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PF004-A-C-SD-1.0
SNT-4A-A-Carrier Tape
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.45±0.1 0.65±0.05
0.25±0.05
1
2
34
5°
No. PF004-A-C-SD-1.0
+0.1
-0
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 5,000
No. PF004-A-R-SD-1.0
PF004-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-Reel
No.
TITLE
SCALE
UNIT mm
SNT-4A-A-Land Recommendation
Seiko Instruments Inc.
PF004-A-L-SD-4.0
No. PF004-A-L-SD-4.0
0.3
0.35
0.52
1.16
0.52
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.10 mm ~ 1.20 mm)
1
2
0.03 mm
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
1.
2.
※1. 䇋⊼ᛣ⛞Ⲭᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
※2. 䇋䇋࣓ᇕ㺙Ё䯈ᠽሩ⛞Ⲭᓣ (1.10 mm ~ 1.20 mm)DŽ
⊼ᛣ1. 䇋࣓㛖ൟᇕ㺙ⱘϟ䴶ࠋϱ㔥ǃ⛞䫵DŽ
2. ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰ᑺ (Ң⛞Ⲭᓣ㸼䴶䍋) 䇋ࠊ0.03 mmҹϟDŽ
3. 㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛ"DŽ
www.sii-ic.com
• The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the approp riate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permissi on of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instrum ents Inc.
• The produ cts described herein are not designed to be radiation-proof.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or comm unity damage that may ensue.
