S-5712 Series www.sii-ic.com LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 (c) Seiko Instruments Inc., 2010-2012 The S-5712 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low current consumption. The output voltage changes when the S-5712 Series detects the intensity level of flux density. Using the S-5712 Series with a magnet makes it possible to detect the open / close state in various devices. High-density mounting is possible by using the small SOT-23-3 or the super-small SNT-4A package. Due to its low voltage operation and low current consumption, the S-5712 Series is suitable for battery-operated portable devices. Due to its highaccuracy magnetic characteristics, the S-5712 Series can make operation's dispersion in the system combined with magnet smaller. Caution This product is intended to use in general electronic devices such as consumer electronics, office equipment, and communications devices. Before using the product in medical equipment or automobile equipment including car audio, keyless entry and engine control unit, contact to SII is indispensable. Features * Pole detection*1: * Detection logic for magnetism*1: * Output form*1: * Magnetic sensitivity*1: *1 * Operating cycle (current consumption) : * Power supply voltage range: * Operation temperature range: * Lead-free (Sn 100%), halogen-free*2 Detection of both poles, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output BOP = 3.0 mT typ. BOP = 4.5 mT typ. Product with both poles detection tCYCLE = 5.70 ms (12.0 A) typ. tCYCLE = 50.50 ms (2.0 A) typ. Product with S pole or N pole detection tCYCLE = 6.05 ms (6.0 A) typ. tCYCLE = 50.85 ms (1.4 A) typ. VDD = 1.6 V to 3.5 V Ta = -40C to +85C *1. The option can be selected. *2. Refer to " Product Name Structure" for details. Applications * Mobile phone (flip type, slide type, etc.) * Notebook PC * Digital video camera * Plaything, portable game * Home appliance Packages * SOT-23-3 * SNT-4A Seiko Instruments Inc. 1 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Block Diagrams 1. Nch open-drain output product VDD OUT Sleep / Awake logic *1 *1 Chopping stabilized amplifier VSS *1. Parasitic diode Figure 1 2. CMOS output product VDD Sleep / Awake logic *1 *1 OUT Chopping stabilized amplifier VSS *1. Parasitic diode Figure 2 2 Seiko Instruments Inc. *1 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Product Name Structure 1. Product name S-5712 x x x x x - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package name (abbreviation) and packing specifications M3T1: SOT-23-3, Tape I4T1: SNT-4A, Tape *1 Magnetic sensitivity 1: BOP = 3.0 mT typ. 2: BOP = 4.5 mT typ. Detection logic for magnetism L: Active "L" H: Active "H" Pole detection D: Detection of both poles S: Detection of S pole N: Detection of N pole Output form N: Nch open-drain output C: CMOS output Operating cycle A: tCYCLE = 50.50 ms typ. (Product with both poles detection) tCYCLE = 50.85 ms typ. (Product with S pole or N pole detection) C: tCYCLE = 5.70 ms typ. (Product with both poles detection) tCYCLE = 6.05 ms typ. (Product with S pole or N pole detection) *1. Refer to the tape drawing. 2. Packages Table 1 Package Name SOT-23-3 SNT-4A Package Drawing Codes Dimension Tape Reel Land MP003-C-P-SD PF004-A-P-SD MP003-C-C-SD PF004-A-C-SD MP003-Z-R-SD PF004-A-R-SD - PF004-A-L-SD Seiko Instruments Inc. 3 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series 3. Product name list 3. 1 SOT-23-3 3. 1. 1 Nch open-drain output product Table 2 Product Name Operating Cycle (tCYCLE) S-5712ANDL1-M3T1U 50.50 ms typ. S-5712ANDL2-M3T1U S-5712ANSL1-M3T1U S-5712ANSL2-M3T1U 50.85 ms typ. Pole Detection Detection Logic Magnetic Sensitivity for Magnetism (BOP) Nch open-drain output Both poles Active "L" 3.0 mT typ. 50.50 ms typ. Nch open-drain output Both poles Active "L" 4.5 mT typ. 50.85 ms typ. Nch open-drain output S pole Active "L" 3.0 mT typ. Nch open-drain output S pole Active "L" 4.5 mT typ. Output Form Remark Please contact our sales office for products other than the above. 3. 1. 2 CMOS output product Table 3 Product Name Operating Cycle (tCYCLE) S-5712ACDL1-M3T1U 50.50 ms typ. S-5712ACDL2-M3T1U 50.50 ms typ. S-5712ACDH1-M3T1U S-5712ACDH2-M3T1U Pole Detection Detection Logic Magnetic Sensitivity for Magnetism (BOP) CMOS output Both poles Active "L" 3.0 mT typ. CMOS output Both poles Active "L" 4.5 mT typ. 50.50 ms typ. CMOS output Both poles Active "H" 3.0 mT typ. 50.50 ms typ. CMOS output Both poles Active "H" 4.5 mT typ. S-5712ACSL1-M3T1U 50.85 ms typ. CMOS output S pole Active "L" 3.0 mT typ. S-5712ACSL2-M3T1U 50.85 ms typ. CMOS output S pole Active "L" 4.5 mT typ. S-5712ACNL1-M3T1U 50.85 ms typ. CMOS output N pole Active "L" 3.0 mT typ. S-5712ACNL2-M3T1U 50.85 ms typ. CMOS output N pole Active "L" 4.5 mT typ. Output Form Remark Please contact our sales office for products other than the above. 4 Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series 3. 2 SNT-4A 3. 2. 1 Nch open-drain output product Table 4 Product Name S-5712ANDL1-I4T1U Operating Cycle (tCYCLE) 50.50 ms typ. Output Form Nch open-drain output Pole Detection Detection Logic Magnetic Sensitivity for Magnetism (BOP) Both poles Active "L" 3.0 mT typ. S-5712ANDL2-I4T1U 50.50 ms typ. Nch open-drain output Both poles Active "L" 4.5 mT typ. S-5712ANSL1-I4T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 3.0 mT typ. S-5712ANSL2-I4T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 4.5 mT typ. Remark Please contact our sales office for products other than the above. 3. 2. 2 CMOS output product Table 5 Product Name Operating Cycle (tCYCLE) Output Form Pole Detection Detection Logic Magnetic Sensitivity for Magnetism (BOP) S-5712ACDL1-I4T1U 50.50 ms typ. CMOS output Both poles Active "L" 3.0 mT typ. S-5712ACDL2-I4T1U 50.50 ms typ. CMOS output Both poles Active "L" 4.5 mT typ. S-5712ACDH1-I4T1U 50.50 ms typ. CMOS output Both poles Active "H" 3.0 mT typ. S-5712ACDH2-I4T1U CMOS output Both poles Active "H" 4.5 mT typ. S-5712ACSL1-I4T1U 50.50 ms typ. 50.85 ms typ. CMOS output S pole Active "L" 3.0 mT typ. S-5712ACSL2-I4T1U 50.85 ms typ. CMOS output S pole Active "L" 4.5 mT typ. S-5712ACSH1-I4T1U 50.85 ms typ. CMOS output S pole Active "H" 3.0 mT typ. S-5712ACSH2-I4T1U 50.85 ms typ. CMOS output S pole Active "H" 4.5 mT typ. S-5712ACNL1-I4T1U 50.85 ms typ. CMOS output N pole Active "L" 3.0 mT typ. S-5712ACNL2-I4T1U 50.85 ms typ. CMOS output N pole Active "L" 4.5 mT typ. S-5712CCDL1-I4T1U 5.70 ms typ. CMOS output Both poles Active "L" 3.0 mT typ. S-5712CCDH1-I4T1U 5.70 ms typ. CMOS output Both poles Active "H" 3.0 mT typ. Remark Please contact our sales office for products other than the above. Seiko Instruments Inc. 5 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Pin Configurations 1. SOT-23-3 Table 6 Top view Pin No. 1 2 Symbol Pin Description 1 VSS GND pin 2 VDD Power supply pin 3 OUT Output pin 3 Figure 3 2. SNT-4A Table 7 Top view 1 2 4 3 Figure 4 Pin No. Symbol Pin Description 1 VDD Power supply pin 2 VSS GND pin 3 *1 NC No connection 4 OUT Output pin *1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 6 Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Absolute Maximum Ratings Table 8 Item Power supply voltage VDD Output current IOUT Output voltage Power dissipation (Ta = +25C unless otherwise specified) Absolute Maximum Rating Unit Symbol Nch open-drain output product CMOS output product SOT-23-3 SNT-4A VOUT PD VSS - 0.3 to VSS + 7.0 V 1.0 mA VSS - 0.3 to VSS + 7.0 V VSS - 0.3 to VDD + 0.3 430*1 300*1 mW mW V Operation ambient temperature Topr -40 to +85 C Storage temperature Tstg -40 to +125 C *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm x 76.2 mm x t1.6 mm (2) Name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Power Dissipation (PD) [mW] 600 SOT-23-3 400 SNT-4A 200 0 0 Figure 5 150 100 50 Ambient Temperature (Ta) [C] Power Dissipation of Package (When Mounted on Board) Seiko Instruments Inc. 7 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Electrical Characteristics 1. Product with both poles detection 1. 1 S-5712AxDxx Table 9 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Test Item Symbol Condition Min. Typ. Max. Unit Circuit Power supply voltage VDD - 1.60 1.85 3.50 V - Current consumption IDD Average value - 2.0 4.0 A 1 Nch open-drain Output transistor Nch, - - 0.4 V 2 output product IOUT = 0.5 mA Output transistor Nch, Output voltage VOUT - - 0.4 V 2 CMOS output IOUT = 0.5 mA product Output transistor Pch, VDD - - - V 3 IOUT = -0.5 mA 0.4 Nch open-drain output product Leakage current ILEAK - - 1 A 4 Output transistor Nch, VOUT = 3.5 V Awake mode time tAW - - 0.10 - ms - Sleep mode time tSL - - 50.40 - ms - Operating cycle tCYCLE tAW + tSL - 50.50 100.00 ms - 1. 2 S-5712CxDxx Table 10 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Power supply voltage Current consumption Output voltage VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE 8 Condition Min. Typ. Max. Unit - 1.60 - 1.85 12.0 3.50 22.0 V A Test Circuit - 1 Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, CMOS output IOUT = 0.5 mA product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.10 5.60 5.70 - - 12.00 ms ms ms - - - Symbol Average value Nch open-drain output product Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series 2. Product with S pole and N pole detection 2. 1 S-5712AxSxx, S-5712AxNxx Table 11 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Power supply voltage Current consumption Output voltage VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE 2. 2 Condition Min. Typ. Max. Unit - 1.60 - 1.85 1.4 3.50 3.0 V A Test Circuit - 1 Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, CMOS output IOUT = 0.5 mA product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.05 50.80 50.85 - - 100.00 ms ms ms - - - Symbol Average value Nch open-drain output product S-5712CxSxx, S-5712CxNxx Table 12 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Power supply voltage Current consumption Output voltage Condition Min. Typ. Max. Unit - 1.60 - 1.85 6.0 3.50 11.0 V A Test Circuit - 1 Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, CMOS output IOUT = 0.5 mA product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.05 6.00 6.05 - - 12.00 ms ms ms - - - Symbol VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE Average value Nch open-drain output product Seiko Instruments Inc. 9 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Magnetic Characteristics 1. Product with both poles detection 1. 1 BOP = 3.0 mT typ. Table 13 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operating point *1 Release point*2 Hysteresis width*3 1. 2 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Condition - - - - BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| Min. 1.4 -4.0 1.1 -3.7 - - Typ. 3.0 -3.0 2.2 -2.2 0.8 0.8 Max. 4.0 -1.4 3.7 -1.1 - - Unit mT mT mT mT mT mT Test Circuit 5 5 5 5 5 5 BOP = 4.5 mT typ. Table 14 Item Operating point*1 Release point*2 Hysteresis width*3 2. S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit - 2.5 4.5 6.0 mT 5 - -6.0 -4.5 -2.5 mT 5 - 2.0 3.5 5.5 mT 5 - -5.5 -3.5 -2.0 mT 5 BHYSS = BOPS - BRPS - 1.0 - mT 5 BHYSN = |BOPN - BRPN| - 1.0 - mT 5 Product with S pole detection 2. 1 BOP = 3.0 mT typ. Table 15 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operating point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 2 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 1.4 1.1 - Typ. 3.0 2.2 0.8 Max. 4.0 3.7 - Unit mT mT mT Test Circuit 5 5 5 BOP = 4.5 mT typ. Table 16 Item Operating point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 10 Symbol BOPS BRPS BHYSS (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit - 2.5 4.5 6.0 mT 5 - 2.0 3.5 5.5 mT 5 BHYSS = BOPS - BRPS - 1.0 - mT 5 Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series 3. Product with N pole detection 3. 1 BOP = 3.0 mT typ. Table 17 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operating point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 3. 2 Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -4.0 -3.7 - Typ. -3.0 -2.2 0.8 Max. -1.4 -1.1 - Unit mT mT mT Test Circuit 5 5 5 BOP = 4.5 mT typ. Table 18 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operating point*1 N pole Release point*2 N pole Hysteresis width*3 N pole Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -6.0 -5.5 - Typ. -4.5 -3.5 1.0 Max. -2.5 -2.0 - Unit mT mT mT Test Circuit 5 5 5 *1. BOPN, BOPS: Operating points BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) is inverted after the magnetic flux density applied to the S-5712 Series by the magnet (N pole or S pole) is increased (the magnet is moved closer). Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status. *2. BRPN, BRPS: Release points BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) is inverted after the magnetic flux density applied to the S-5712 Series by the magnet (N pole or S pole) is decreased (the magnet is moved further away). Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status. *3. BHYSN, BHYSS: Hysteresis widths BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively. Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss. Seiko Instruments Inc. 11 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Test Circuits A *1 R 100 k VDD S-5712 Series OUT VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 6 Test Circuit 1 VDD S-5712 Series OUT VSS Figure 7 A V Test Circuit 2 VDD S-5712 Series OUT A VSS V Figure 8 12 Test Circuit 3 Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series VDD S-5712 Series OUT A VSS V Figure 9 Test Circuit 4 R*1 100 k VDD S-5712 Series OUT VSS V *1. Resistor (R) is unnecessary for the CMOS output product. Figure 10 Test Circuit 5 Seiko Instruments Inc. 13 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Standard Circuit *1 VDD CIN 0.1 F R 100 k S-5712 Series OUT VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 11 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 14 Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Operation 1. Direction of applied magnetic flux The S-5712 Series detects the flux density which is vertical to the marking surface. In product with detection of both poles, the output voltage (VOUT) is inverted when the S pole or N pole is moved closer to the marking surface. In product with detection of the S pole, the output voltage (VOUT) is inverted when the S pole is moved closer to the marking surface. In product with detection of the N pole, the output voltage (VOUT) is inverted when the N pole is moved closer to the marking surface. Figure 12 and Figure 13 show the direction in which magnetic flux is being applied. 1. 1 SOT-23-3 1. 2 SNT-4A N S N S Marking surface Marking surface Figure 12 2. Figure 13 Position of Hall sensor Figure 14 and Figure 15 show the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package. 2. 1 SOT-23-3 2. 2 Top view Top view 1 The center of Hall sensor; in this 0.3 mm 4 2 3 The center of Hall sensor; in this 0.3 mm 1 2 SNT-4A 3 0.16 mm (typ.) 0.7 mm (typ.) Figure 14 Figure 15 Seiko Instruments Inc. 15 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series 3. Basic operation The S-5712 Series changes the output voltage level (VOUT) according to the level of the magnetic flux density (N pole or S pole) applied by a magnet. The following explains the operation when the magnetism detection logic is active "L". 3. 1 Product with both poles detection When the magnetic flux density vertical to the marking surface exceeds BOPN or BOPS after the S pole or N pole of a magnet is moved closer to the marking surface of the S-5712 Series, VOUT changes from "H" to "L". When the S pole or N pole of a magnet is moved further away from the marking surface of the S-5712 Series and the magnetic flux density is lower than BRPN or BRPS, VOUT changes from "L" to "H". Figure 16 shows the relationship between the magnetic density and VOUT. VOUT BHYSN BHYSS H L S pole N pole BOPN BRPN 0 BRPS BOPS Flux density (B) Figure 16 3. 2 Product with S pole detection When the magnetic flux density vertical to the marking surface exceeds BOPS after the S pole of a magnet is moved closer to the marking surface of the S-5712 Series, VOUT changes from "H" to "L". When the S pole of a magnet is moved further away from the marking surface of the S-5712 Series and the magnetic flux density is lower than BRPS, VOUT changes from "L" to "H". Figure 17 shows the relationship between the magnetic density and VOUT. VOUT BHYSS H L N pole S pole 0 BRPS BOPS Flux density (B) Figure 17 16 Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series 3. 3 Product with N pole detection When the magnetic flux density vertical to the marking surface exceeds BOPN after the N pole of a magnet is moved closer to the marking surface of the S-5712 Series, VOUT changes from "H" to "L". When the N pole of a magnet is moved further away from the marking surface of the S-5712 Series and the magnetic flux density is lower than BRPN, VOUT changes from "L" to "H". Figure 18 shows the relationship between the magnetic density and VOUT. VOUT BHYSN H L S pole N pole BOPN 0 BRPN Flux density (B) Figure 18 Seiko Instruments Inc. 17 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Precautions * If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. * Note that the IC may malfunction if the power supply voltage rapidly changes. * Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. * Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and distortion during mounting the IC on a board or handle after mounting. * SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 18 Seiko Instruments Inc. LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series Marking Specifications 1. SOT-23-3 Top view (1) to (3): (4): 1 Product code (Refer to Product name vs. Product code.) Lot number (1) (2) (3) (4) 2 3 Product name vs. Product code 1. 1 Nch open-drain output product Product Name S-5712ANDL1-M3T1U S-5712ANDL2-M3T1U S-5712ANSL1-M3T1U S-5712ANSL2-M3T1U 1. 2 Product Code (1) (2) (3) X A B X A C X A J X A K CMOS output product Product Name S-5712ACDL1-M3T1U S-5712ACDL2-M3T1U S-5712ACDH1-M3T1U S-5712ACDH2-M3T1U S-5712ACSL1-M3T1U S-5712ACSL2-M3T1U S-5712ACNL1-M3T1U S-5712ACNL2-M3T1U Product Code (1) (2) (3) X B B X B C X B F X B G X B J X B K X B R X B S Seiko Instruments Inc. 19 LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 S-5712 Series 2. SNT-4A Top view 1 (1) to (3): Product code (Refer to Product name vs. Product code.) 4 (1) (2) (3) 2 3 Product name vs. Product code 2. 1 Nch open-drain output product Product Name S-5712ANDL1-I4T1U S-5712ANDL2-I4T1U S-5712ANSL1-I4T1U S-5712ANSL2-I4T1U 2. 2 CMOS output product Product Name S-5712ACDL1-I4T1U S-5712ACDL2-I4T1U S-5712ACDH1-I4T1U S-5712ACDH2-I4T1U S-5712ACSL1-I4T1U S-5712ACSL2-I4T1U S-5712ACSH1-I4T1U S-5712ACSH2-I4T1U S-5712ACNL1-I4T1U S-5712ACNL2-I4T1U S-5712CCDL1-I4T1U S-5712CCDH1-I4T1U 20 Product Code (1) (2) (3) X A B X A C X A J X A K Product Code (1) (2) (3) X B B X B C X B F X B G X B J X B K X B N X B O X B R X B S X F B X F F Seiko Instruments Inc. 2.90.2 1 2 3 0.16 +0.1 -0.06 0.950.1 1.90.2 0.40.1 No. MP003-C-P-SD-1.0 TITLE SOT233-C-PKG Dimensions No. MP003-C-P-SD-1.0 SCALE UNIT mm Seiko Instruments Inc. +0.1 o1.5 -0 4.00.1 2.00.1 +0.25 o1.0 -0 0.230.1 4.00.1 1.40.2 3.20.2 1 2 3 Feed direction No. MP003-C-C-SD-2.0 TITLE SOT233-C-Carrier Tape No. MP003-C-C-SD-2.0 SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.20.5 Enlarged drawing in the central part o130.2 No. MP003-Z-R-SD-1.0 SOT233-C-Reel TITLE MP003-Z-R-SD-1.0 No. SCALE UNIT QTY. mm Seiko Instruments Inc. 3,000 1.20.04 3 4 +0.05 0.08 -0.02 2 1 0.65 0.480.02 0.20.05 No. PF004-A-P-SD-4.0 TITLE SNT-4A-A-PKG Dimensions PF004-A-P-SD-4.0 No. SCALE UNIT mm Seiko Instruments Inc. +0.1 o1.5 -0 4.00.1 2.00.05 0.250.05 +0.1 5 1.450.1 2 1 3 4 o0.5 -0 4.00.1 0.650.05 Feed direction No. PF004-A-C-SD-1.0 TITLE SNT-4A-A-Carrier Tape PF004-A-C-SD-1.0 No. SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.00.3 Enlarged drawing in the central part o130.2 (60) (60) No. PF004-A-R-SD-1.0 SNT-4A-A-Reel TITLE PF004-A-R-SD-1.0 No. SCALE UNIT QTY. mm Seiko Instruments Inc. 5,000 0.52 2 1.16 0.52 0.35 1. 2. 0.3 1 (0.25 mm min. / 0.30 mm typ.) (1.10 mm ~ 1.20 mm) 0.03 mm 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm). Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. 1. 1. (0.25 mm min. / 0.30 mm typ.) 2. (1.10 mm ~ 1.20 mm) 2. 1. 2. () 0.03 mm 3. 4. "SNT" TITLE SNT-4A-A-Land Recommendation PF004-A-L-SD-4.0 No. No. PF004-A-L-SD-4.0 SCALE UNIT mm Seiko Instruments Inc. www.sii-ic.com * * The information described herein is subject to change without notice. * When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. * Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. * The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior written permission of Seiko Instruments Inc. * * The products described herein are not designed to be radiation-proof. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.