IRAM630-1562F
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15A, 600V IPM
with Integrated PFC
and Open Emitter Pins
Description
International Rectifier's IRAM630-1562F is a 15A, 600V PFC+Inverter Intelligent Power Module (IPM) with
Open Emitter pins specifically designed for energy efficient Air Conditioners application. IR's technology
offers an extremely compact, high performance compressor motor-driver with both PFC and Inverter
stage in a single isolated package to simplify design.
This advanced IPM is a combination of IR's low VCE (on) Trench IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally
enhanced package. A built-in high precision temperature monitor and over-current protection feature,
along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of
protection and fail-safe operation. Using a Single in line package with full transfer mold structure and
CTI>600 minimizes PCB space and resolves isolation problems to heatsink.
Features
Integrated boost PFC power stage and gate driver
Integrated gate drivers and bootstrap circuits
Temperature monitor
Protection shutdown pin
Low VCE (on) Trench IGBT technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
3.3V Schmitt-triggered input logic
Cross-conduction prevention logic
Motor Power range up to 2kW / 85~253 Vac
Isolation 2000VRMS min and CTI> 600
RoHS Compliant
Recognized by UL (File Number: E252584)
Absolute Maximum Ratings
VCES / VRRM IGBT/ FW Diode Blocking Voltage 600 V
VAC AC Input Voltage 253 VRMS
V+Positive Bus Voltage 450 V
Iin @ TC=25°C PFC RMS Current at FPWM=20kHz 20
Iin @ TC=100°C PFC RMS Current at FPWM=20kHz 10
Ipk_PFC PFC Maximum Peak Phase Current (Note 1) 30
Fp_PFC PFC Maximum PWM Carrier Frequency 20 kHz
Pd_PFC PFC Maximum Power dissipation per IGBT @ TC =25°C 62 W
Note 1: tP<100ms, VCC=15V, TC=25°C, FPWM=20kHz.
A
Intelligent Power Module for
Energy Efficient Compressor
Applications
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Internal Electrical Schematic – IRAM630-1562F
V+ (16)
PFC (1)
V- (19)
VRU (22)
U, VS1 (13)
V, VS2 (9)
W, VS3 (5)
VB1 (12)
VB2 (8)
VB3 (4)
HIN1 (23)
HIN2 (24)
HIN3 (25)
LIN1 (26)
LIN2 (27)
LIN3 (28)
ITRIP (32)
FLT/EN (30)
PFCIN (29)
VCC (34)
VSS (35)
Q1
Q4
Q2 Q3
Q5 Q6
D1
D4
D2 D3
D5 D6
R7
R4
R2 R3
R5 R6
C1
C2
C3
C4 C5
Q7
D8
D7
PFCTRIP (31)
TH (33)
VS1
HO1
VB1
VCC
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
PFCIN
ITRIP
F/EN
RCIN
VSS
COM
LO1
LO3
LO2
VB2 HO2 VS2 VB3 HO3 VS3
Driver IC
PFCOUT
PFC
TRIP
VDC
GF
VSDC
R9
R1
VRV (21)
VRW (20)
C6
R8
C7
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TJ (IGBT & Diode & IC) Maximum Operating Junction Temperature +150
TCOperating Case Temperature Range -20 to +100
TSTG Storage Temperature Range -40 to +125
T Mounting torque Range (M3 screw) 0.8 to 1.0 Nm
Note 1: tP<100ms, VCC=15V, TC=25°C, FPWM=20kHz.
Note 2: Sinusoidal Modulation at V+=400V, VCC=15V, TJ=150°C, MI=0.8, PF=0.6, See Figure 4.
Note 3: tP<100ms, VCC=15V, TC=25°C, FPWM=6kHz.
°C
Absolute Maximum Ratings (Continued)
Symbol Parameter Min Max Units Conditions
VS1,2,3
High side floating supply offset
voltage
VB1,2,3 - 20 VB1,2,3 +0.3 V
VB1,2,3 High side floating supply voltage -0.3 600 V
VCC
Low Side and logic fixed supply
voltage
-0.3 20 V
VIN
Input voltage LIN, HIN, PFCIN,
ITrip, FLT/EN
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
VPFCTRIP PFCTRIP input voltage -2
Lower of
(VSS+15V) or
VCC+0.3V
V
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PFC Section Electrical Characteristics
Symbol Parameter Min Typ Max Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600 --- --- V
VIN=0V, IC=250µA
ΔV(BR)CES / ΔT
Temperature Coeff. Of Breakdown
Voltage
--- 0.3 --- V/°C
VIN=0V, IC=1mA
(25°C - 150°C)
--- 1.15 1.4
IC=10A, TJ=25°C
--- 1.25 ---
IC=10A, TJ=150°C
--- 10 150
VIN=0V, V+=600V
--- 100 ---
VIN=0V, V+=600V, TJ=150°C
-- 1.75 2.2
IF=10A
--- 1.25 ---
IF=10A, TJ=150°C
VFM Diode D7 Forward Voltage Drop --- 1.95 --- VIF=3.5A
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
VCE(ON)
Collector-to-Emitter Saturation
Voltage
V
VFM
Diode D8 Forward Voltage Drop
V
ICES
Zero Gate Voltage Collector
Current
μA
PFC Section Switching Characteristics
Symbol Parameter Min Typ Max Units Conditions
EON Turn-On Switching Loss --- 540 700
EOFF Turn-Off Switching Loss --- 220 350
ETOT Total Switching Loss --- 760 1050
EREC Diode Reverse Recovery energy --- 15 35
tRR Diode Reverse Recovery time --- 140 --- ns
EON Turn-on Switching Loss --- 930 ---
EOFF Turn-off Switching Loss --- 310 ---
ETOT Total Switching Loss --- 1240 ---
EREC Diode Reverse Recovery energy --- 75 ---
tRR Diode Reverse Recovery time --- 180 --- ns
QGTurn-On IGBT Gate Charge --- 95 140 nC IC=48A, V+=400V, VGE=15V
RBSOA
Reverse Bias Safe Operating Area
TJ=150°C, IC=40A, VP=600V
V+= 450V,
VGE=+15V to 0V See CT3
SCSOA
Short Circuit Safe Operating Area 2 --- --- µs
TJ=150°C, V+= 360V,
VGE=+15V to 0V
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
µJ
IC=10A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
µJ
IC=10A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
FULL SQUARE
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Inverter Section Electrical Characteristics
Symbol Parameter Min Typ Max Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600 --- --- V
VIN=0V, IC=250µA
ΔV(BR)CES / ΔT
Temperature Coeff. Of Breakdown
Voltage
--- 0.3 --- V/°C
VIN=0V, IC=250µA
(25°C - 150°C)
--- 1.5 1.7
IC=5A, TJ=25°C
--- 1.7 ---
IC=5A, TJ=150°C
--- 580
VIN=0V, V+=600V
--- 80 ---
VIN=0V, V+=600V, TJ=150°C
-- 1.8 2.35
IF=5A
--- 1.45 ---
IF=5A, TJ=150°C
C1,2,3,4 VCC / VBS Capacitor Value --- 47 --- nF TJ=25°C
C6,7 Itrip / PFCtrip Capacitor Value --- 1--- nF TJ=25°C
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
VCE(ON)
Collector-to-Emitter Saturation
Voltage
V
ICES
Zero Gate Voltage Collector
Current
μA
VFM
Diode Forward Voltage Drop
V
Inverter Section Switching Characteristics
Symbol Parameter Min Typ Max Units Conditions
EON Turn-On Switching Loss --- 220 350
EOFF Turn-Off Switching Loss --- 85 140
ETOT Total Switching Loss --- 305 490
EREC Diode Reverse Recovery energy --- 15 35
tRR Diode Reverse Recovery time --- 115 --- ns
EON Turn-on Switching Loss --- 320 ---
EOFF Turn-off Switching Loss --- 115 ---
ETOT Total Switching Loss --- 435 ---
EREC Diode Reverse Recovery energy --- 50 ---
tRR Diode Reverse Recovery time --- 160 --- ns
QGTurn-On IGBT Gate Charge --- 19 29 nC IC=8A, V+=400V, VGE=15V
RBSOA
Reverse Bias Safe Operating Area
TJ=150°C, IC=5A, VP=600V
V+= 450V,
VCC=+15V to 0V See CT3
SCSOA
Short Circuit Safe Operating Area 2 --- --- µs
TJ=150°C, V+= 360V,
VGE=+17.5V to 0V
FULL SQUARE
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
µJ
IC=5A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
µJ
IC=5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
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Recommended Operating Conditions Driver Function
Symbol Definition Min Typ Max Units
VB1,2,3 High side floating supply voltage VS+12.5 VS+15 VS+17.5 V
VS1,2,3 High side floating supply offset voltage Note 5 --- 450 V
VCC Low side and logic fixed supply voltage 13.5 15 16.5 V
VIN Logic input voltage LIN, HIN, PFCIN, ITrip, FLT/EN 0--- 5 V
VPFCTRIP PFCTRIP input voltage -2 --- 0 V
HIN High side PWM pulse width 1 --- --- µs
Deadtime External dead time between HIN and LIN 1 --- --- µs
Note 4: For more details, see IRS26302D data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential (Note 4)
Note 5: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
Static Electrical Characteristics Driver Function
Symbol Definition Min Typ Max Units
VIN,th+ Positive going input threshold for LIN, HIN, PFCIN, FLT/EN 2.5 --- --- V
VIN,th- Negative going input threshold for LIN, HIN, PFCIN, FLT/EN --- --- 0.8 V
VCCUV+, VBSUV+ VCC/VBS supply undervoltage, Positive going threshold 10.2 11.1 12 V
VCCUV-, VBSUV- VCC/VBS supply undervoltage, Negative going threshold 10 10.9 11.8 V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V
V(ITRIP) ITRIP threshold Voltage 0.4 0.5 0.6 V
V(ITRIP, HYS) ITRIP Input Hysteresis --- 0.05 --- V
V(PFCTRIP)PFCTRIP threshold Voltage -0.16 -0.2 -0.24 V
V(PFCTRIP, HYS) PFCTRIP Input Hysteresis --- 0.02 --- V
IQBS Quiescent VBS supply current --- --- 120 µA
IQCC Quiescent VCC supply current --- --- 4mA
ILK Offset Supply Leakage Current --- --- 50 µA
IIN+ Input bias current VIN=3.3V for LIN, HIN, PFCIN, FLT/EN 350 -- 860 µA
IIN- Input bias current VIN=0V for LIN, HIN, PFCIN, FLT/EN -- 0 1 µA
ITRIP+ ITRIP bias current VT/ITRIP=3.3V --- 1 2 µA
ITRIP- ITRIP bias current VT/ITRIP=0V --- 0 5 µA
PFCTRIP+ PFC ITRIP bias current VPFC_ITRIP=-250mV --- 20 --- µA
PFCTRIP- PFC ITRIP bias current VPFC_ITRIP=0V --- 0 5 µA
Ron_FLT Fault low on resistance --- 50 100 Ω
RBS Internal bootstrap FET on resistance --- 200 400 Ω
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 4)
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Dynamic Electrical Characteristics
Symbol
Parameter Min Typ Max Units Conditions
TON
Input to Output propagation turn-
on delay time (see fig.11)
--- --- 1.15 µs
TOFF
Input to Output propagation turn-
off delay time (see fig. 11)
--- --- 1.15 µs
TFILIN Input filter time (HIN,LIN,PFC,EN) 200 350 --- ns VIN=0 or VIN=3.3V
TFILEN Input filter time (FLT/EN) 100 200 --- ns VIN=0 or VIN=5V
TEN
EN low to six switch turn-off
propagation delay (see fig. 3)
--- --- 1.15 µs
VIN=0 or VIN=3.3V, VEN=0
TFLT ITRIP to Fault propagation delay --- 800 --- ns VIN=0 or VIN=3.3V, VITRIP=3.3V
TBLT-ITRIP ITRIP Blanking Time --- 500 --- ns VIN=0 or VIN=3.3V, VITRIP=3.3V
TITRIP
ITRIP to six switch turn-off
propagation delay (see fig. 2)
--- --- 1.5 µs
IC=5A, V+=400V
TPFCTRIP
PFCTRIP to switch turn-off
propagation delay (see fig. 2)
--- --- 1.5 µs
IC=10A, V+=400V
DT
Internal Dead Time injected by
driver
190 290 420 ns
VIN=0 or VIN=3.3V
MT
Matching Propagation Delay Time
(On & Off) all channels
--- --- 50 ns
External dead time> 400ns
1.17
1.7 2.19 TC = 25°C
---
1.5 --- TC = 100°C
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified.
TFLT-CLR
Post ITRIP to six switch turn-off
clear time (see fig. 2)
ms
IC=5A, V+=400V
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Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C) Thermal resistance, PFC IGBT --- 1.6 2.0
Rth(J-C) Thermal resistance, PFC Diode --- 3.0 3.6
Rth(J-C) Thermal resistance, per IGBT --- 3.8 4.6
Rth(J-C) Thermal resistance, per Diode --- 5.8 6.9
Rth(C-S) Thermal resistance, C-S --- 0.1 ---
CTI
Comparative Tracking Index 600 --- --- V
°C/W
Inverter Operating Condition
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R25 Resistance 44.65 47 49.35 kΩ TC = 25°C
R125 Resistance 1.27 1.41 1.56 kΩ TC = 125°C
BB-constant (25-50°C) 3989 4050 4111 k
R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1--- mW/°C
TC = 25°C
Input-Output Logic Level Table
FLT/EN
ITRIP HIN1,2,3 LIN1,2,3 U,V,W
1 0 1 0 V+
10010
1 0 0 0 Off
1 0 1 1 Off
1 1 X X Off
0 X X X Off
Ho
Lo
U,V,W
IC
Driver
V+
HIN1,2,3
LIN1,2,3
(20,22,23)
(24,25,26)
(10,6,2)
Ho
Lo
U,V,W
IC
Driver
V+
HIN1,2,3
LIN1,2,3
(20,22,23)
(24,25,26)
(10,6,2)
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Figure 1. Input/Output Timing Diagram
Figure 2. ITRIP Timing Waveform
Figure 3. Output Enable Timing Diagram
Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the
half-bridge output voltage would be determined by the direction of current flow in the load.
U,V,W
LIN1,2,3
ITRIP
HIN1,2,3
ITRIP
LIN1,2,3
HIN1,2,3
TFLT-CLR
50%
50%
U,V,W
50%
TITRIP
50%
FLT 50%
TFLT
EN
50%
50%
U,V,W
TEN
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Module Pin-Out Description
Pin Name Description
1PFC PFC
2na none
3na none
4VB3 High Side Floating Supply Voltage 3
5 W,VS3 Output 3 - High Side Floating Supply Offset Voltage
6na none
7na none
8VB2 High Side Floating Supply voltage 2
9 V,VS2 Output 2 - High Side Floating Supply Offset Voltage
10 na none
11 na none
12 VB1 High Side Floating Supply voltage 1
13 U,VS1 Output 1 - High Side Floating Supply Offset Voltage
14 na none
15 na none
16
V+Positive Bus Input Voltage
17 na none
18 na none
19
V-Negative Bus Input Voltage
20 VRW Low Side Emitter Connection - Phase 3
21 VRV Low Side Emitter Connection - Phase 2
22 VRU Low Side Emitter Connection - Phase 1
23 HIN1 Logic Input High Side Gate Driver - Phase 1
24 HIN2 Logic Input High Side Gate Driver - Phase 2
25 HIN3 Logic Input High Side Gate Driver - Phase 3
26 LIN1 Logic Input Low Side Gate Driver - Phase 1
27 LIN2 Logic Input Low Side Gate Driver - Phase 2
28 LIN3 Logic Input Low Side Gate Driver - Phase 3
29 PFCIN PFC input
30 FLT/EN Fault Output and Enable Pin
31
PFCTRIP Current Protection Pin for PFC
32
ITRIP Current Protection Pin for Inverter
33
VTH Temperature Feedback
34
VCC +15V Main Supply
35
VSS Negative Main Supply
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Typical Application Connection IRAM630-1562F
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to
reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the
module pins will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional
high frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DT04-4, application note AN-1044 or Figure 11. Bootstrap capacitor value
must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see
maximum ratings Table on page 3).
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system,
overcurrent condition must be cleared before resuming operation.
Drive IC
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Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
0
1
2
3
4
5
6
7
8
9
10
11
12
0 2 4 6 8 10 12 14 16 18 20
Maximum Output Phase RMS Current - A
PWM Switching Frequency -kHz
T
C
= 80ºC
TC= 90ºC
T
C
= 100ºC
0
1
2
3
4
5
6
7
8
110 100
Maximum Output Phase RMS Current -A
Modulation Frequency - Hz
F
PWM
= 6kHz
FPWM = 10kHz
F
PWM
= 16kHz
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Figure 6. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Figure 7. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
0
20
40
60
80
100
120
0 2 4 6 8 10 12 14 16 18 20
Total Power Loss-W
PWM Switching Frequency -kHz
I
OUT
= 7.5A
IOUT = 6A
I
OUT
= 5A
0
20
40
60
80
100
120
012345678
Total Power Loss - W
Output Phase Current - ARMS
F
PWM
= 16kHz
FPWM = 10kHz
F
PWM
= 6kHz
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Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
40
60
80
100
120
140
160
0 1 2 3 4 5 6 7 8
Max Allowable Case Temperature - ºC
Output Phase Current - ARMS
F
PWM
= 6kHz
FPWM = 10kHz
F
PWM
= 16kHz
90
100
110
120
130
140
150
160
65 70 75 80 85 90 95 100 105 110 115
Internal Thermistor Temperature Equivalent Read Out - °C
IGBT Junction Temperature - °C
TJ avg = 1.28 x TTherm + 7.57
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Figure 10. Thermistor Readout vs. Temperature (4.7kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor Temperature - °C
Thermistor Pin Read-Out Voltage - V
TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM
°C kΩ °C kΩ °C kΩ
-40 1747 25 47.00 90 3.972
-35 1245 30 37.64 95 3.388
-30 898.5 35 30.33 100 2.902
-25 655.8 40 24.59 105 2.494
-20 484.0 45 20.05 110 2.150
-15 360.9 50 16.43 115 1.860
-10 271.7 55 13.54 120 1.615
-5 206.5 60 11.21 125 1.406
0158.2 65 9.328 130 1.228
5122.3 70 7.798 135 1.076
10 95.23 75 6.544 140 0.9447
15 74.73 80 5.518 145 0.8321
20 59.07 85 4.674 150 0.7349
Max
Avg.
Min
+5V
EXT
R
VTherm RTherm
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0 5 10 15 20
PWM Frequency - kHz
Recommended Bootstrap Capacitor - μF
10μF
3.3μF
2.2μF
6.8μF
1.5μF
4.7μF
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Figure 12. Switching Parameter Definitions
Figure 12a. Input to Output propagation turn-
on delay time.
Figure 12b. Input to Output propagation turn-
off delay time.
Figure 12c. Diode Reverse Recovery.
50%
HIN/LIN
VCE
IC
HIN/LIN
TOFF
tf
90% I
C
10% IC
50%
VCE
VCE IC
HIN/LIN
TON
tr
50%
HIN/LIN 90% IC
10% IC
50%
VCE
VCE
IF
HIN/LIN
trr
Irr
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Figure CT1. Switching Loss Circuit
Figure CT2. S.C.SOA Circuit
Figure CT3. R.B.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
V+
IN
IO
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
Io
V+
IN
IO
Ho
Lo
U,V,W
IC
Driver
Hin1,2,3
Io
Lin1,2,3
V+
IN
IO
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Package Outline IRAM630-1562F2
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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missing pin : 2,3,6,7,10,11,14,15,17,18
35
1
IRA
M630-1562F2
note2
①
③
②
note4
note5
note3
P 9DF00
note1: Unit Tolerance is
+
0.5mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3:
Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
Font shown on Module.
note5: "P" Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
IRAM630-1562F
19
www.irf.com
© 2013 International Rectifier
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2013-10-23