2N3117 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICBO SYMBOL VCBO VCEO 60 V 6.0 V 50 mA PD TJ, Tstg 360 mW -65 to +200 C MAX 10 UNITS nA CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=45V VCB=45V, TA=150C VEB=5.0V BVCBO IC=10A BVCEO BVEBO VCE(SAT) VBE(ON) IC=1.0mA, IB=100A VCE=5.0V, IC=100A hFE VCE=5.0V, IC=1.0A 100 hFE 250 hFE VCE=5.0V, IC=10A VCE=5.0V, IC=10A, TA=-55C VCE=5.0V, IC=100A hFE hfe VCE=5.0V, IC=1.0mA VCE=5.0V, IC=0.5mA, f=30MHz Cob VCB=5.0V, IE=0 VEB=0.5V, IC=0 Cib NF UNITS V VEBO IC IEBO hFE 60 10 A 10 nA 60 V IC=10mA 60 V IE=10A 6.0 VCE=5.0V, IC=5.0A, f=10kHz BW=1.0kHz, RS=50k V 0.35 V 0.7 V 500 50 300 400 2.0 4.5 pF 6.0 pF 1.0 dB R0 (4-September 2012) 2N3117 NPN SILICON TRANSISTOR TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (4-September 2012) w w w. c e n t r a l s e m i . c o m