2N3117
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3117 type is an
NPN silicon transistor designed for general purpose
amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 50 mA
Power Dissipation PD 360 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=45V 10 nA
ICBO V
CB=45V, TA=150°C 10 μA
IEBO V
EB=5.0V 10 nA
BVCBO I
C=10μA 60 V
BVCEO I
C=10mA 60 V
BVEBO I
E=10μA 6.0 V
VCE(SAT) I
C=1.0mA, IB=100μA 0.35 V
VBE(ON) V
CE=5.0V, IC=100μA 0.7 V
hFE V
CE=5.0V, IC=1.0μA 100
hFE V
CE=5.0V, IC=10μA 250 500
hFE V
CE=5.0V, IC=10μA, TA=-55°C 50
hFE V
CE=5.0V, IC=100μA 300
hFE V
CE=5.0V, IC=1.0mA 400
hfe V
CE=5.0V, IC=0.5mA, f=30MHz 2.0
Cob V
CB=5.0V, IE=0 4.5 pF
Cib V
EB=0.5V, IC=0 6.0 pF
NF VCE=5.0V, IC=5.0μA, f=10kHz
BW=1.0kHz, RS=50kΩ 1.0 dB
R0 (4-September 2012)
www.centralsemi.com
2N3117
NPN SILICON TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-18 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R0 (4-September 2012)
