2N5641 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5641 is Designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz. PACKAGE STYLE .380" 4L STUD FEATURES INCLUDE: * Emitter Ballasting * Gold Metalization * 3/8" SOE Stud Package MAXIMUM RATINGS IC 1.0 A VCE 35 V VCB 65 V PDISS 15 W @ TC = 25 OC TJ -65 OC to + 200 OC TSTG -65 OC to + 150 OC CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V PG C VCC =28 V 1.0 IC = 100 mA 5.0 f = 1.0 MHz POUT = 7.0 W f = 175 MHz --8.5 8.4 60 mA 12.5 15 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 1/1 Specifications are subject to change without notice.