December 2010
FDD850N10L N-Channel PowerTrench® MOSFET
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. A5 www.fairchildsemi.com1
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Thermal Characteristics
Symbol Parameter Rating Units
VDSS Drain to Source Voltage 100 V
VGSS Gate to Source Voltage ±20 V
IDDrain Current - Continuous (TC = 25oC) 15.7 A
- Continuous (TC = 100oC) 11.1
IDM Drain Current - Pulsed (Note 1) 63 A
EAS Single Pulsed Avalanche Energy (Note 2) 41 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PDPower Dissipation (TC = 25oC) 50 W
- Derate above 25oC0.33W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter Min. Max. Units
RθJC Thermal Resistance, Junction to Case - 3.0 oC/W
RθJA Thermal Resistance, Junction to Ambient - 87
FDD850N10L
N-Channel PowerTrench® MOSFET
100V, 15.7A, 75mΩ
Features
•R
DS(on) = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A
•R
DS(on) = 64mΩ ( Typ.) @ VGS = 5V, ID = 12A
• Low Gate Charge ( Typ. 22.2nC)
•Low C
rss ( Typ. 42pF)
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
•RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Application
• DC to DC Converters / Synchronous Rectification
D-PAK
G
S
DD
G
S
FDD850N10L N-Channel PowerTrench® MOSFET
FDD850N10L Rev. A5 www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDD850N10L FDD850N10L D-PAK 380mm 16mm 2500
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 - - V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250μA, Referenced to 25oC-0.1-V/
oC
IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 μA
VDS = 80V, TC = 150oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA1.0-2.5V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 12A - 61 75 mΩ
VGS = 5V, ID = 12A - 64 96 mΩ
gFS Forward Transconductance VDS = 10V, ID = 15.7A (Note 4) -31-S
Ciss Input Capacitance VDS = 25V, VGS = 0V
f = 1MHz
- 1100 1465 pF
Coss Output Capacitance - 80 105 pF
Crss Reverse Transfer Capacitance - 42 - pF
Qg(tot) Total Gate Charge at 10V VGS = 10V VDS = 80V
ID = 15.7A
- 22.2 28.9 nC
Qg(tot) Total Gate Charge at 5V VGS = 5V - 12.3 16.0 nC
Qgs Gate to Source Gate Charge -3.0-nC
Qgd Gate to Drain “Miller” Charge - 5.7 - nC
td(on) Turn-On Delay Time VDD = 50V, ID = 15.7A
VGS = 5V, RGEN = 4.7Ω
(Note 4, 5)
-1744ns
trTurn-On Rise Time - 21 52 ns
td(off) Turn-Off Delay Time - 27 64 ns
tfTurn-Off Fall Time - 8 26 ns
ESR Equivalent Series Resistance (G-S) - 1.75 - Ω
ISMaximum Continuous Drain to Source Diode Forward Current - - 15.7 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 63 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.3 V
trr Reverse Recovery Time VGS = 0V, VDS = 80V, ISD = 15.7A
dIF/dt = 100A/μs (Note 4) -38-ns
Qrr Reverse Recovery Charge - 50 - nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 9.1A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 15.7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD850N10L N-Channel PowerTrench® MOSFET
FDD850N10L Rev. A5 www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10
1
10
100
*Notes:
1. 250μs Pulse Test
2. T C = 25oC
ID, Drain Current[ A]
VDS, Drain-Source Voltage[V]
VGS = 15.0V
1 0 .0 V
6 .0 V
5 .0 V
3 .5 V
3 .0 V
0246
0.1
1
10
100
-55oC
175oC
*Notes:
1. V DS = 10V
2. 2 5 0 μs Pulse Test
25oC
ID, Drain Current[ A]
VGS, Ga t e -S o urce V o lt a g e [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
*Notes:
1. VGS = 0V
2. 250μs Pu lse Test
175oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 1020304050
0.00
0.04
0.08
0.12
0.16
0.20
*Not e: T C = 25oC
VGS = 10V
VGS = 5V
RDS(ON) [Ω],
Drain - Source On-Resistance
ID, Drain Current [A]
0.1 1 10 100
10
100
1000
5000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C gd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 4 8 12162024
0
2
4
6
8
10
*Not e: ID = 15.7A
VDS = 20V
VDS = 50V
VDS = 80V
VGS, Gate-Source Voltage [V]
Qg, Tot al Gate C h a r g e [nC]
FDD850N10L N-Channel PowerTrench® MOSFET
FDD850N10L Rev. A5 www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.90
0.95
1.00
1.05
1.10
1.15
*Notes:
1. VGS = 0V
2. ID = 250μA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Tem perature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 12A
RDS(on), [Normalized]
Drain-Sourc e On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150 175
0
3
6
9
12
15
18
RθJC = 3.0oC/W
VGS = 5V
VGS = 10V
ID, Drain Current [A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 1
0.01
0.1
1
4
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZθJC(t) = 3.0oC/W Max.
2. Duty Fac t or, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Thermal Response [ZθJC]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FDD850N10L N-Channel PowerTrench® MOSFET
FDD850N10L Rev. A5 www.fairchildsemi.com
5
5V
FDD850N10L N-Channel PowerTrench® MOSFET
FDD850N10L Rev. A5 www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame T ype
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Volt age Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse W idth
Gate Pulse Perio d
--------------------------
DUT
VDS
+
_
Driver
RGSame T ype
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Volt age Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse W idth
Gate Pulse Perio d
--------------------------
D = Gate Pulse W idth
Gate Pulse Perio d
--------------------------
FDD850N10L N-Channel PowerTrench® MOSFET
FDD850N10L Rev. A5 www.fairchildsemi.com
7
Mechanical Dimensions
Dimensions in Millimeters
D-PAK
FDD850N10L N-Channel PowerTrench® MOSFET
FDD850N10L Rev. A5 www.fairchildsemi.com
8
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Rev. I51
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