Number: DB-034
June 2008 / F
Page 1
SEMICONDUCTOR
TAK CHEONG ®
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter Value Units
Power Dissipation 500 mW
Storage Temperature Range -65 to +175 °C
Operating Junction Temperature +175 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 75 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
VR
(Volts)
TCBZX55C 2V0 1.88 2.11 5 100 1 600 100 1
TCBZX55C 2V2 2.08 2.33 5 100 1 600 100 1
TCBZX55C 2V4 2.28 2.56 5 85 1 600 50 1
TCBZX55C 2V7 2.51 2.89 5 85 1 600 10 1
TCBZX55C 3V0 2.8 3.2 5 85 1 600 4 1
TCBZX55C 3V3 3.1 3.5 5 85 1 600 2 1
TCBZX55C 3V6 3.4 3.8 5 85 1 600 2 1
TCBZX55C 3V9 3.7 4.1 5 85 1 600 2 1
TCBZX55C 4V3 4.0 4.6 5 75 1 600 1 1
TCBZX55C 4V7 4.4 5.0 5 60 1 600 0.5 1
TCBZX55C 5V1 4.8 5.4 5 35 1 550 0.1 1
TCBZX55C 5V6 5.2 6.0 5 25 1 450 0.1 1
TCBZX55C 6V2 5.8 6.6 5 10 1 200 0.1 2
TCBZX55C 6V8 6.4 7.2 5 8 1 150 0.1 3
TCBZX55C 7V5 7.0 7.9 5 7 1 50 0.1 5
TCBZX55C 8V2 7.7 8.7 5 7 1 50 0.1 6.2
TCBZX55C 9V1 8.5 9.6 5 10 1 50 0.1 6.8
TCBZX55C 10 9.4 10.6 5 15 1 70 0.1 7.5
TCBZX55C 11 10.4 11.6 5 20 1 70 0.1 8.2
TCBZX55C 12 11.4 12.7 5 20 1 90 0.1 9.1
TCBZX55C 13 12.4 14.1 5 26 1 110 0.1 10
Cathode
Anode
ELECTRICAL SYMBOL
TCBZX55C2V0 through TCBZX55C75
T
C
BZX
55
B2V4
t
hr
oug
h T
C
BZX
55
B7
5
L
55T
xxx
DEVICE MARKING DIAGRAM
L : Logo
Device Code : TCBZX55Txxx
T : VZ tolerance B or C
AXIAL LEAD
DO35
Number: DB-034
June 2008 / F
Page 2
SEMICONDUCTOR
TAK CHEONG ®
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
VR
(Volts)
TCBZX55C 15 13.8 15.6 5 30 1 110 0.1 11
TCBZX55C 16 15.3 17.1 5 40 1 170 0.1 12
TCBZX55C 18 16.8 19.1 5 50 1 170 0.1 13
TCBZX55C 20 18.8 21.1 5 55 1 220 0.1 15
TCBZX55C 22 20.8 23.3 5 55 1 220 0.1 16
TCBZX55C 24 22.8 25.6 5 80 1 220 0.1 18
TCBZX55C 27 25.1 28.9 5 80 1 220 0.1 20
TCBZX55C 30 28 32 5 80 1 220 0.1 22
TCBZX55C 33 31 35 5 80 1 220 0.1 24
TCBZX55C 36 34 38 5 80 1 220 0.1 27
TCBZX55C 39 37 41 2.5 90 0.5 500 0.1 28
TCBZX55C 43 40 46 2.5 90 0.5 600 0.1 32
TCBZX55C 47 44 50 2.5 110 0.5 700 0.1 35
TCBZX55C 51 48 54 2.5 125 0.5 700 0.1 38
TCBZX55C 56 52 60 2.5 135 0.5 1000 0.1 42
TCBZX55C 62 58 66 2.5 150 0.5 1000 0.1 47
TCBZX55C 68 64 72 2.5 160 0.5 1000 0.1 51
TCBZX55C 75 70 80 2.5 170 0.5 1000 0.1 56
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
VR
(Volts)
TCBZX55B 2V4 2.35 2.45 5 85 1 600 50 1
TCBZX55B 2V7 2.65 2.75 5 85 1 600 10 1
TCBZX55B 3V0 2.94 3.06 5 85 1 600 4 1
TCBZX55B 3V3 3.23 3.37 5 85 1 600 2 1
TCBZX55B 3V6 3.53 3.67 5 85 1 600 2 1
TCBZX55B 3V9 3.82 3.98 5 85 1 600 2 1
TCBZX55B 4V3 4.21 4.39 5 75 1 600 1 1
TCBZX55B 4V7 4.61 4.79 5 60 1 600 0.5 1
TCBZX55B 5V1 5.00 5.20 5 35 1 550 0.1 1
TCBZX55B 5V6 5.49 5.71 5 25 1 450 0.1 1
TCBZX55B 6V2 6.08 6.32 5 10 1 200 0.1 2
TCBZX55B 6V8 6.66 6.94 5 8 1 150 0.1 3
TCBZX55B 7V5 7.33 7.63 5 7 1 50 0.1 5
TCBZX55B 8V2 8.04 8.36 5 7 1 50 0.1 6.2
TCBZX55B 9V1 8.92 9.28 5 10 1 50 0.1 6.8
TCBZX55B 10 9.80 10.20 5 15 1 70 0.1 7.5
TCBZX55B 11 10.78 11.22 5 20 1 70 0.1 8.2
TCBZX55B 12 11.76 12.24 5 20 1 90 0.1 9.1
TCBZX55B 13 12.74 13.26 5 26 1 110 0.1 10
TCBZX55B 15 14.70 15.30 5 30 1 110 0.1 11
TCBZX55B 16 15.68 16.32 5 40 1 170 0.1 12
TCBZX55B 18 17.64 18.36 5 50 1 170 0.1 13
TCBZX55B 20 19.60 20.40 5 55 1 220 0.1 15
TCBZX55B 22 21.56 22.44 5 55 1 220 0.1 16
TCBZX55B 24 23.52 24.48 5 80 1 220 0.1 18
TCBZX55B 27 26.46 27.54 5 80 1 220 0.1 20
TCBZX55B 30 29.40 30.60 5 80 1 220 0.1 22
TCBZX55B 33 32.34 33.66 5 80 1 220 0.1 24
TCBZX55B 36 35.28 36.72 5 80 1 220 0.1 27
TCBZX55B 39 38.22 39.78 2.5 90 0.5 500 0.1 28
TCBZX55B 43 42.14 43.86 2.5 90 0.5 600 0.1 32
TCBZX55B 47 46.06 47.94 2.5 110 0.5 700 0.1 35
Number: DB-034
June 2008 / F
Page 3
SEMICONDUCTOR
TAK CHEONG ®
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
VR
(Volts)
TCBZX55B 51 49.98 52.02 2.5 125 0.5 700 0.1 38
TCBZX55B 56 54.88 57.12 2.5 135 0.5 1000 0.1 42
TCBZX55B 62 60.76 63.24 2.5 150 0.5 1000 0.1 47
TCBZX55B 68 66.64 69.36 2.5 160 0.5 1000 0.1 51
TCBZX55B 75 73.50 76.50 2.5 170 0.5 1000 0.1 56
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types
Notes:
1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers listed have zener voltage as shown.
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA.
4. ZENER IMPEDANCE (ZZ) DERIVATION
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the
dc zener current (IZT) is superimposed to IZT .
Number: DB-034
June 2008 / F
Page 4
SEMICONDUCTOR
TAK CHEONG ®
Typical Characteristics
0
100
200
300
400
500
600
0 40 80 120 160 200
Temperature [℃]
PD-Power Passipation [mW]
Ta = 25℃
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2
VF - Forward Voltage [mV]
Forward Current [mA]
PD = 500mW
Ta = 25℃
0
50
100
150
200
250
300
0246810
VZ - Reverse Voltage [V]
Reverse Current [mA]
PD = 500mW
Ta = 25℃
0.01
0.1
1
10
100
15 25 35 45 55 65 75
VZ - Reverse Voltage [V]
Reverse Current [mA]
f = 1MHz
Ta = 25℃
1
10
100
1000
0 2040 6080
VZ - Reverse Voltage [V]
Total Capacitance [pF]
VR = 0V
VR = 2V VR = 5 V VR = 20V
VR = 30V
Ta = 25℃
0.1
1
10
100
1000
110100
VZ - Reverse Voltage [V]
Differential Zener Impedance [Ω]
Iz=10mA
Iz=5mA
Iz=2mA
Iz=1mA
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
Figure 5. Reverse Current vs. Reverse Voltage Figure 6. Reverse Current vs. Reverse Voltage
Figure 3. Differential Impedance vs. Zener Voltage Figure 4. Forward Current vs. Forward Voltage
Number: DB-034
June 2008 / F
Page 5
SEMICONDUCTOR
TAK CHEONG ®
Package Outline
Package Case Outline
DO-35
DO-35
Millimeters Inches
DIM
Min Max Min Max
A 0.46 0.55 0.018 0.022
B 3.05 5.08 0.120 0.200
C 25.40 38.10 1.000 1.500
D 1.53 2.28 0.060 0.090
Notes: 1. All dimensions are within JEDEC standard.
2. DO35 polarity denoted by cathode band.
Number: DB-100
April 14, 2 008 / A
DISCLAIMER NOTICE
TAK CHEONG ®
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunctio n of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information re viously supplied. For additio nal information , please visit
our website http://www.takcheong.com, o r consu lt your ne ares t Tak Cheong’s sales off ice for further assistance.
