2N4416A
2N4416A
Document Number 3631
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test con-
ditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of
going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
10mA
300mW
2.4mW / °C
–55 to 150°C
–55 to 200°C
SMALL SIGNAL
N–CHANNEL J–FET THAT IS
DESIGNED T O PRO VIDE HIGH
PERFORMANCE AMPLIFICATION AT
HIGH FREQUENCIES
FEATURES
• EXCELLENT HIGH FREQUENCY GAINS
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVEL OPTIONS
APPLICATIONS:
The 2N4416 and 2N4416A are N-Channel
JFETs designed to provide high-performance
amplification, especially at high-frequency.
VGD Gate – Drain Voltage
VGS Gate – Source Voltage
IGGate Current
PDPower Dissipation
Derate
TjOperating Junction Temperature Range
Tstg Storage Temperature Range
–30V
–30V –35V
–35V
MECHANICAL DATA
Dimensions in mm (inches)
TO-72
(TO-206AF)
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C unless otherwise stated)
PIN 1 - Case
PIN 3 -Drain PIN 2 - Gate
PIN 4 - Source
0.48 (0.019)
0.41 (0.016)
dia.
4.95 (0.195)
4.52 (0.178)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
12.7 (0.5 0 0 )
min.
1
2
3
4
2.54 (0.100)
Nom.
2N4416 2N4416A
2N4416A
2N4416A
Document Number 3631
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
VDS = 0V 2N4416
IG= –1µA2N4416A
VDS = 15V 2N4416
ID= 1nA 2N4416A
VDS = 15V VGS = 0V
VGS = –20 VDS = 0V
Tamb = 125°C
VDG = 10V ID= 1mA
VDS = 10V VGS = –10V
IG= 1mA VDS = 0V
VGS = 0V ID= 1mA
VDS = 15V VGS = 0V
f = 1kHz
VDS = 15V VGS = 0V
f = 1MHz
VDS = 10V VGS = 0V
f = 1kHz
V(BR)GSS Gate – Source Breakdown Voltage
VGSS(off) Gate – Source Cut–off Voltage
IDSS* Saturation Current
IGSS Gate Reverse Current
IGGate Operating Current
ID(off) Drain Cut–off Current
VGS(F) Gate – Source Forward Voltage
RDS(on) Drain – Source On Resistance
gfs Common – Source Forward
Transconductance
gos Common – Source Output
Transconductance
Ciss Common – Source Input Capacitance
Common – Source Reverse Transfer
Crss Capacitance
Common – Source Output
Coss Capacitance
_
enEquivalent Input Noise Voltage
–30 –36
–35 –36
–3 –6
–2.5 –3 –6
51015
–2 –100
–4 –100
–20
2
0.7
150
4.567.5
15 50
2.2 4
0.7 0.8
12
6
V
mA
pA
nA
pA
V
Ω
ms
µs
pF
nV
√Hz
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Pulse Test; PW = 300µs, Duty Cycle # 3%
