SCALETM-2 and SCALETM-2+ 2SC0108T SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Dual Channel Ultra-compact Low-cost Driver Core Abstract The new low-cost SCALETM-2 and SCALETM-2+ dual-driver core 2SC0108T combines unrivalled compactness with broad applicability. The driver was designed for universal applications requiring high reliability. The 2SC0108T drives all usual IGBT modules up to 600A/1200V or 450A/1700V. The embedded paralleling capability allows easy inverter design covering higher power ratings. Multi-level topologies are also supported. The 2SC0108T is the most compact driver core available for industrial applications, with a footprint of only 45mm x 34.3mm and an insertion height of max. 16mm. It allows even the most restricted insertion spaces to be efficiently used. Fig. 1 2SC0108T driver core www.power.com/igbt-driver Page 1 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Contents Abstract .......................................................................................................................................... 1 Contents ......................................................................................................................................... 2 Driver Overview ............................................................................................................................. 4 Mechanical Dimensions .................................................................................................................. 5 Pin Designation .............................................................................................................................. 7 Recommended Interface Circuitry for the Primary Side Connector .............................................. 8 Description of Primary Side Interface ........................................................................................... 8 General ............................................................................................................................... 8 VCC terminal ....................................................................................................................... 8 MOD (mode selection) ......................................................................................................... 9 INA, INB (channel drive inputs, e.g. PWM)........................................................................... 10 SO1, SO2 (status outputs) .................................................................................................. 10 TB (input for adjusting the blocking time Tb) ........................................................................ 10 Recommended Interface Circuitry for the Secondary Side Connectors ...................................... 11 Description of Secondary Side Interfaces .................................................................................... 11 General ............................................................................................................................. 11 Emitter terminal (VEx)........................................................................................................ 11 Reference terminals (REFx) ................................................................................................ 12 Collector sense (VCEx) with resistors ................................................................................... 12 Desaturation protection with sense diodes ........................................................................... 13 Disabling the VCE,sat detection .............................................................................................. 15 Gate turn-on (GHx) and turn-off (GLx) terminals .................................................................. 15 Active clamping ................................................................................................................. 16 Soft Shut Down (SSD) ........................................................................................................ 16 How Do 2SC0108T SCALE-2 and SCALE-2+ Drivers Work in Detail? ........................................... 17 Power supply and electrical isolation ................................................................................... 17 Power-supply monitoring .................................................................................................... 17 Parallel connection of 2SC0108T ......................................................................................... 18 3-level or multilevel topologies ............................................................................................ 18 Additional application support for 2SC0108T ........................................................................ 18 Bibliography ................................................................................................................................. 18 The Information Source: SCALE-2 and SCALE-2+ Driver Data Sheets ........................................ 19 Quite Special: Customized SCALE-2 and SCALE-2+ Drivers ........................................................ 19 www.power.com/igbt-driver Page 2 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Technical Support ........................................................................................................................ 19 Quality .......................................................................................................................................... 19 Legal Disclaimer ........................................................................................................................... 19 Ordering Information ................................................................................................................... 20 Information about Other Products .............................................................................................. 20 Manufacturer ................................................................................................................................ 20 Power Integrations Worldwide High Power Customer Support Locations .................................. 21 www.power.com/igbt-driver Page 3 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Driver Overview The 2SC0108T is a driver core equipped with Power Integrations' latest SCALE-2 or SCALE-2+ chipset /1/. The SCALE-2 chipset is a set of application-specific integrated circuits (ASICs) that cover the main range of functions needed to design intelligent gate drivers. The SCALE-2 driver chipset is a further development of the proven SCALE technology /2/. The SCALE-2+ chipset further integrates the Soft Shut Down (SSD) feature described in the paragraph "Soft Shut Down (SSD)" on page 16. The 2SC0108T targets low- and medium-power, dual-channel IGBT applications such as general purpose drives, UPS, solar converters and medical applications. The 2SC0108T comprises a complete dual-channel IGBT driver core, fully equipped with an isolated DC/DC converter, short-circuit protection and supply-voltage monitoring. Fig. 2 Block diagram of the driver core 2SC0108T www.power.com/igbt-driver Page 4 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Mechanical Dimensions Fig. 3 Interactive 3D drawing of 2SC0108T2A0-17 www.power.com/igbt-driver Page 5 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual X=2.54mm (100mil) for 2SC0108T2A0-17, 2SC0108T2B0-17, 2SC0108T2E0-17 2SC018T2H0-17 X=3.1mm (122mil) for 2SC0108T2G0-17 X=5.84mm (230mil) for 2SC0108T2C0-17, 2SC0108T2F0-17, 2SC0108T2F1-17 Fig. 4 Mechanical drawing of 2SC0108T The primary side and secondary side pin grid is 2.54mm (100mil) with a pin cross section of 0.64mm x 0.64mm. Total outline dimensions of the board are 34.3mm x 45mm. The total height of the driver is max. 16mm measured from the bottom of the pin bodies to the top of the populated PCB. Recommended diameter of solder pads: O 2mm (79 mil) Recommended diameter of drill holes: O 1mm (39 mil) www.power.com/igbt-driver Page 6 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Pin Designation Pin No. and Name Function Primary Side 1 2 3 4 5 6 7 8 GND INA INB VCC TB SO2 SO1 MOD Ground Signal input A; non-inverting input relative to GND Signal input B; non-inverting input relative to GND Supply voltage; 15V supply for primary side Set blocking time Status output channel 2; normally high-impedance, pulled down to low on fault Status output channel 1; normally high-impedance, pulled down to low on fault Mode selection (direct/half-bridge mode) Secondary Sides 9 10 11 12 13 14 15 16 17 18 19 20 21 GH1 VE1 GL1 REF1 VCE1 Free Free Free GH2 VE2 GL2 REF2 VCE2 Gate high channel 1; pulls gate high through turn-on resistor Emitter channel 1; connect to (auxiliary) emitter of power switch Gate low channel 1; pulls gate low through turn-off resistor Set VCE detection threshold voltage channel 1; resistor to VE1 VCE sense channel 1; connect to IGBT collector through resistor network Gate high channel 2; pulls gate high through turn-on resistor Emitter channel 2; connect to (auxiliary) emitter of power switch Gate low channel 2; pulls gate low through turn-off resistor Set VCE detection threshold voltage channel 2; resistor to VE2 VCE sense channel 2; connect to IGBT collector through resistor network Note: Pins with the designation "Free" are not physically present. www.power.com/igbt-driver Page 7 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Recommended Interface Circuitry for the Primary Side Connector Fig. 5 Recommended user interface of 2SC0108T (primary side) Description of Primary Side Interface General The primary side interface of the driver 2SC0108T is very simple and easy to use. The driver primary side is equipped with an 8-pin interface connector with the following terminals: 1 2 2 1 1 x x x x x power-supply terminal drive signal inputs status outputs (fault returns) mode selection input (half-bridge mode / direct mode) input to set the blocking time All inputs and outputs are ESD-protected. Moreover, all digital inputs have Schmitt-trigger characteristics. VCC terminal The driver has one VCC terminal on the interface connector. It supplies the primary side electronics as well as the DC-DC converter to supply the secondary sides with 15V. The driver limits the inrush current at startup and no external current limitation of the voltage source for VCC is needed. www.power.com/igbt-driver Page 8 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual MOD (mode selection) The MOD input allows the operating mode to be selected with a resistor connected to GND. Direct mode If the MOD input is connected to GND, direct mode is selected. In this mode, there is no interdependence between the two channels. Input INA directly influences channel 1 while INB influences channel 2. High level at an input (INA or INB) always results in turn-on of the corresponding IGBT. In a half-bridge topology, this mode should be selected only when the dead times are generated by the control circuitry so that each IGBT receives its own drive signal. Caution: Synchronous or overlapping timing of both switches of a half-bridge basically shorts the DC-link. Half-bridge mode If the MOD input is connected to GND with a resistor 71k<Rm<181k, half-bridge mode is selected. In this mode, the inputs INA and INB have the following functions: INA is the drive signal input while INB acts as the enable input (see Fig. 6). It is recommended to place a capacitor Cm=22nF in parallel to Rm in order to reduce the deviation between the dead times at the rising and falling edges of INA respectively. When input INB is low level, both channels are blocked. If it goes high, both channels are enabled and follow the signal on the input INA. At the transition of INA from low to high, channel 2 turns off immediately and channel 1 turns on after a dead time Td. Fig. 6 Signals in half-bridge mode The value of the dead time Td is determined by the value of the resistor R m according to the following formula (typical value): Rm[k] 33 Td [s] 56.4 www.power.com/igbt-driver with 0.5s<Td<3.8s and 73k<Rm<182k Page 9 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual INA, INB (channel drive inputs, e.g. PWM) INA and INB are basically drive inputs, but their function depends on the MOD input (see above). They safely recognize signals in the whole logic-level range between 3.3V and 15V. Both input terminals feature Schmitttrigger characteristics (refer to the driver data sheet /3/). An input transition is triggered at any edge of an incoming signal at INA or INB. SO1, SO2 (status outputs) The outputs SOx have open-drain transistors. When no fault condition is detected, the outputs have high impedance. An internal current source of 500A pulls the SOx outputs to a voltage of about 4V when leaved open. When a fault condition (primary side supply undervoltage, secondary side supply undervoltage, IGBT short-circuit or overcurrent) is detected, the corresponding status output SOx goes to low (connected to GND). The diodes D1 and D2 must be Schottky diodes and must only be used when using 3.3V logic. For 5V...15V logic, they can be omitted. The maximum SOx current in a fault condition must not exceed the value specified in the driver data sheet /3/. Both SOx outputs can be connected together to provide a common fault signal (e.g. for one phase). However, it is recommended to evaluate the status signals individually to allow fast and precise fault diagnosis. How the status information is processed a) A fault on the secondary side (detection of short-circuit of IGBT module or supply undervoltage) is transmitted to the corresponding SOx output immediately. The SOx output is automatically reset (returning to a high impedance state) after a blocking time T b has elapsed (refer to "TB (input for adjusting the blocking time Tb)" for timing information). b) A supply undervoltage on the primary side is indicated to both SOx outputs at the same time. Both SOx outputs are automatically reset (returning to a high impedance state) when the undervoltage on the primary side disappears. TB (input for adjusting the blocking time Tb) The terminal TB allows the blocking time Tb to be set by connecting a resistor Rb to GND (see Fig. 5). The following equation calculates the value of R b connected between pins TB and GND in order to program the desired blocking time Tb (typical value): Rb [k] 1.0 Tb [ms] 51 with 20ms<Tb<130ms and 71k<Rb<181k The blocking time can also be set to a minimum of 9s (typical) by selecting Rb=0. The terminal TB must not be left floating. Note: It is also possible to apply a stabilized voltage at TB. The following equation is used to calculate the voltage Vb between TB and GND in order to program the desired blocking time Tb (typical value): Vb [V ] 0.02 Tb [ms] 1.02 www.power.com/igbt-driver with 20ms<Tb<130ms and 1.42<Vb<3.62V Page 10 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Recommended Interface Circuitry for the Secondary Side Connectors Fig. 7 Recommended user interface of 2SC0108T (secondary sides) Description of Secondary Side Interfaces General Each driver's secondary side (driver channel) is equipped with a 5-pin interface connector with the following terminals (x stands for the number of the drive channel 1 or 2): 1 1 1 1 1 x x x x x emitter terminal VEx reference terminal REFx for overcurrent or short-circuit protection collector sense terminal VCEx turn-on gate terminal GHx turn-off gate terminal GLx All inputs and outputs are ESD-protected. Emitter terminal (VEx) The emitter terminal must be connected to the IGBT auxiliary emitter with the circuit shown in Fig. 7. www.power.com/igbt-driver Page 11 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Reference terminals (REFx) The reference terminal REFx allows the threshold to be set for short-circuit and/or overcurrent protection with a resistor placed between REFx and VEx. A constant current of 150A is provided at pin REFx. Collector sense (VCEx) with resistors The collector sense of each channel of the 2SC0108T must be connected to the IGBT collector or MOSFET drain with the circuit shown in Figs. 7 or 8 in order to detect an IGBT or MOSFET overcurrent or short-circuit. In an IGBT off-state, the driver's internal MOSFET connects pin VCEx to pin COMx. The capacitor C ax is then precharged/discharged to the negative supply voltage, which is about -8V referred to VEx (red circle in Fig. 8 left). During this time, a current flows from the collector (blue circle in Fig. 8) via the resistor network and the diode BAS416 to GHx. The current is limited by the resistor chain. It is recommended to dimension the resistor value of R vcex in order to obtain a current of about IRvcex=0.6-1mA flowing through Rvcex (e.g. 1.2-1.8M for VDC-LINK=1200V). The current through Rvcex must not exceed 1mA. A high-voltage resistor as well as series-connected resistors may be used. In any case, the minimum creepage distance required for the application must be considered. The reference voltage is set by the resistor R thx. It is calculated from the reference current (typically 150uA) and the reference resistance Rthx (green circle in Fig. 8) Vrefx 150A Rthx Power Integrations recommends the use of Rthx=68k. In this case the driver will safely protect the IGBT against short-circuit, but not necessarily against overcurrent. Overcurrent protection has a lower timing priority and is recommended to be realized within the host controller. Lower resistance values make the system more sensitive and do not provide any advantages in the case of desaturated IGBTs (short-circuit). Fig. 8 VCE desaturation protection with resistors At IGBT turn-on and in the on-state, the driver's internal MOSFET turns off. While VCE decreases (blue curve in Fig. 8), Cax is charged from the COMx potential to the IGBT saturation voltage (red curve in Fig. 8). The time required to charge Cax depends on the DC bus voltage, the value of the resistor R ax and the value of the capacitor Cax. For 1200V and 1700V IGBTs it is recommended to set R ax=120k. For 600V IGBTs the recommended value is Rax=62k. During the response time, the VCE monitoring circuit is inactive. The response time is the time that elapses after turn-on of the power semiconductor until the collector voltage is measured. It corresponds to the shortcircuit duration. www.power.com/igbt-driver Page 12 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual The value of the response time capacitors Cax can be determined from the following table in order to set the desired response time (Rvcex=1.8M, Rax=120k, DC-link voltage VDC-LINK>550V): Cax [pF] Rthx [k]/Vthx [V] Response time [s] 0 43 / 6.45 1.2 15 43 / 6.45 3.2 22 43 / 6.45 4.2 33 43 / 6.45 5.8 47 43 / 6.45 7.8 0 68 / 10.2 1.5 15 68 / 10.2 4.9 22 68 / 10.2 6.5 33 68 / 10.2 8.9 47 68 / 10.2 12.2 Table 1 Typical response time as a function of the capacitance Cax and the resistance Rthx As the parasitic capacitances on the host PCB may influence the response time, it is recommended to measure it in the final design. It is important to define a response time which is shorter than the maximum permitted short-circuit duration of the power semiconductor used. Note that the response time increases at DC-link voltage values lower than 550V (Rax=120k) and/or higher threshold voltage values Vthx. The response time will decrease at lower threshold voltage values. The diode D1x in Fig. 7 must have a very low leakage current and a blocking voltage >40V (e.g. BAS416). Schottky diodes must be explicitly avoided. The components Cax, Rax, Rthx and D1x must be placed as close as possible to the driver. A large collectoremitter loop must also be avoided. When a short-circuit/overcurrent fault is detected, the driver switches off the corresponding power semiconductor. The fault status is immediately transferred to the corresponding SOx output of the affected channel. The power semiconductor is kept in the off-state (non-conducting) and the fault is shown at pin SOx as long as the blocking time Tb is active. The blocking time Tb is applied independently to each channel. Tb starts as soon as a fault has been detected. Desaturation protection with sense diodes 2SC0108T also provides desaturation protection with high-voltage diodes as shown in Fig. 9. However, the use of high-voltage diodes has some disadvantages compared to the use of resistors: Common-mode current relating to the rate of change dvce/dt of the collector-emitter voltage: Highvoltage diodes have large junction capacitances C j. These capacitances in combination with the dv ce/dt generate a common-mode current Icom flowing in and out of the measurement circuit. I com C j dvce dt Price: High-voltage diodes are more expensive than standard 0805/150V or 1206/200V SMD resistors. Availability: Standard thick-film resistors are comparatively easier to source on the market. www.power.com/igbt-driver Page 13 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Limited ruggedness: The reaction time does not increase at lower V CE levels. Consequently, false triggering may occur at higher IGBT temperatures, higher collector currents, resonant switching or phase-shift PWM, particularly when the reference voltage V thx is set below about 10V. The upper limit of the reference voltage is restricted to about 10V, which may lead to limited IGBT utilization: the collector current may be limited to values smaller than twice the nominal current, or the short-circuit withstand capability may be reduced. During the IGBT off-state, D4x (and Rax) sets the VCEx pin to COMx potential, thereby precharging/discharging the capacitor Cax to the negative supply voltage, which is about -8V referred to VEx. At IGBT turn-on, the capacitor Cax is charged via Rax. When the IGBT collector-emitter voltage drops below that limit, the voltage of Cax is limited via the high-voltage diodes D1x and D2x. The voltage across Cax can be calculated by: VCax VCEsat VF ( D1x ) VF ( D 2 x ) (330 15V VCEsat VF ( D1x ) VF ( D 2 x ) Rax 330 ) The reference voltage Vrefx must be higher than Vcax. The reference voltage is set up by the resistor R thx. The reference voltage is calculated via the reference current (typically 150uA) and the reference resistance R thx: Vrefx 150A Rthx Fig. 9 Recommended circuit for desaturation protection with sense diodes (one channel shown) The value of the resistance Rax can be calculated with the following equation in order to program the desired response time Tax at turn-on: Rax[k] 1000 Tax[ s] 15V VGLx Cax[ pF ] ln( ) 15V Vrefx Eq. 6 VGLx is the absolute value of the turn-off voltage at the driver output. It depends on the driver load and can be found in the driver data sheet /3/. Recommended components D1x/D2x/D3x/D4x and values for Rax and Cax are: High-voltage diodes D1x/D2x: 2x 1N4007 for 1200V IGBT 3x 1N4007 for 1700V IGBT D3x: Transient voltage suppressor of the voltage class 12V...15V with small junction capacitance as CDDFN2-12C from Bourns. D4x: High-speed diode as BAS316. Schottky diodes must be avoided. Rax=24k...62k Cax=100pF...560pF www.power.com/igbt-driver Page 14 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Note that Cax must include the parasitic capacitance of the transient voltage suppressor D3x and the PCB. Note also that the instantaneous V CE threshold voltage is determined by the voltage at pin REFx (150A through Rthx) minus the voltage across the 330 resistor as well as the forward voltages across D 1x and D2x. The minimum off-state duration should not be shorter than about 1s in order not to significantly reduce the response time for the next turn-on pulse. Example: A resistor of Rax46k must be used to define a response time of 6s with Cax=150pF, Rthx=33k and VGLx=9V. Disabling the VCE,sat detection To disable the VCE,sat measurement of 2SC0108T, a resistor with a minimum value of 33k must be placed between VCEx and VEx according to Fig. 10. The reference resistor Rthx may be chosen between 33k and infinity, i.e. the REFx pin may be left open. Fig. 10 Disabling the VCE,sat detection Gate turn-on (GHx) and turn-off (GLx) terminals These terminals allow the turn-on (GHx) and turn-off (GLx) gate resistors to be connected to the gate of the power semiconductor. The GHx and GLx pins are available as separated terminals in order to set the turn-on and turn-off resistors independently without the use of an additional diode. Please refer to the driver data sheet /3/ for the limit values of the gate resistors used. A resistor between GLx and VEx of 22k (higher values are also possible) may be used in order to provide a low-impedance path from the IGBT gate to the emitter even if the driver is not supplied with power. Lower resistance values are not allowed. A transient voltage suppressor device (D5x) may be used between gate and emitter (e.g. SMBJ13CA) if the gate-emitter voltage becomes too high in the IGBT short-circuit condition, thus leading to excessive shortcircuit currents. www.power.com/igbt-driver Page 15 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Note however that it is not advisable to operate the power semiconductors within a half-bridge with a driver in the event of a low supply voltage. Otherwise, a high rate of increase of V CE may cause partial turn-on of these IGBTs. Active clamping Active clamping is a technique designed to partially turn on the power semiconductor as soon as the collectoremitter (drain-source) voltage exceeds a predefined threshold. The power semiconductor is then kept in linear operation. Basic active clamping topologies implement a single feedback path from the IGBT's collector through transient voltage suppressor devices (TVS) to the IGBT gate. The 2SC0108T supports basic active clamping. It is recommended to use the circuit shown in Fig. 7. The following parameters must be adapted to the application: TVS D2x, D3x and D4x. It is recommended to use: - Six 80V TVS with 600V IGBTs with DC-link voltages up to 430V. Good clamping results can be obtained with five unidirectional TVS P6SMBJ70A and one bidirectional TVS P6SMBJ70CA from Semikron or with five unidirectional TVS SMBJ70A-E3 and one bidirectional TVS SMBJ70CA-E3 from Vishay. - Six 150V TVS with 1200V IGBTs with DC-link voltages up to 800V. Good clamping results can be obtained with five unidirectional TVS SMBJ130A-E3 and one bidirectional TVS SMBJ130CA-E3 from Vishay or five unidirectional TVS SMBJ130A-TR from ST and one bidirectional TVS P6SMBJ130CA from Diotec. - Six 220V TVS with 1700V IGBTs with DC-link voltages up to 1200V. Good clamping results can be obtained with five unidirectional TVS P6SMB220A and one bidirectional TVS P6SMB220CA from Diotec or five unidirectional TVS SMBJ188A-E3 and one bidirectional TVS SMBJ188CA-E3 from Vishay. At least one bidirectional TVS (D 2x) per channel must be used in order to avoid negative current flowing through the TVS chain during turn-on of the antiparallel diode of the IGBT module due to its forward recovery behavior. Such a current could, depending on the application, lead to undervoltage of the driver secondary voltage VISOx to VEx (15V). Note that it is possible to modify the number of TVS in a chain. The active clamping efficiency can be improved by increasing the number of TVS used in a chain if the total threshold voltage remains at the same value. Note also that the active clamping efficiency is highly dependent on the type of TVS used (e.g. manufacturer). Note that the active clamping performance can be improved by increasing the value of the turn-off gate resistors Rg,offx. If active clamping is not used, the TVS D2x, D3x and D4x can be omitted. Soft Shut Down (SSD) The SSD function is implemented and cannot be deactivated on the following SCALE-2+ types of 2SC0108T drivers: 2SC0108T2F1-17, 2SC0108T2G0-17 and 2SC0108T2H0-17 (refer to the driver data sheet /3/). All other driver's types do not feature the SSD function. The SSD function reduces the turn-off di/dt to limit the Vce overvoltage as soon as a short-circuit condition is detected. An excessive turn-off overvoltage is therefore avoided and the power semiconductor is turned off within its safe operating area. www.power.com/igbt-driver Page 16 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual The SSD function is realized with a closed loop scheme which is activated as soon as an IGBT short circuit is detected. The driver then measures the gate-emitter voltage and adjusts it according to the three following phases: In a first step, the gate-emitter voltage is decreased to a defined level controlled with the closed loop feedback. The defined level of the gate-emitter voltage is held at the given level to ramp down the collector current smoothly (e.g. with lower di/dt) until the gate charge profile of the power semiconductor has reached the end of the Miller plateau. The end of the Miller plateau is detected by evaluating the gate current. The gate-emitter voltage is then reduced to its end value, following a given reference value. The SSD function is only active when a short-circuit condition has been detected and not under normal operating conditions (e.g. at nominal current or under over-current conditions). It may therefore be necessary to increase the turn-off gate resistance or to take appropriate measures (e.g. lower DC-link stray inductance) to avoid excessive turn-off overvoltages under normal operating conditions. Note that the SSD function uses a closed-loop scheme. It may therefore not necessarily perform better with a higher value of the turn-off gate resistor. Even if the SSD function uses a closed-loop regulation scheme, it has performance limitations. Excessive DClink stray inductance values may therefore lead to excessive turn-off overvoltages in the short-circuit condition. It is therefore necessary to characterize the short-circuit behavior of the IGBT under all applicationrelevant conditions, especially over the full IGBT and driver ambient temperature range, and to consider sufficient safety margins of the VCE peak voltage to achieve a rugged design. If the VCE peak voltage is excessively high and cannot be lowered by other means, Power Integrations additionally recommends using basic active clamping according to the paragraph "Active clamping". How Do 2SC0108T SCALE-2 and SCALE-2+ Drivers Work in Detail? Power supply and electrical isolation The driver is equipped with a DC/DC converter to provide an electrically insulated power supply to the gate driver circuitry. All transformers (DC/DC and signal transformers) feature safe isolation to EN 50178, protection class II between primary side and either secondary side. Note that the driver requires a stabilized supply voltage. Power-supply monitoring The driver's primary side as well as both secondary-side driver channels are equipped with a local undervoltage monitoring circuit. In the event of a primary-side supply undervoltage, the power semiconductors are driven with a negative gate voltage to keep them in the off-state (the driver is blocked) and the fault is transmitted to both outputs SO1 and SO2 until the fault disappears. In case of a secondary-side supply undervoltage, the corresponding power semiconductor is driven with a negative gate voltage to keep it in the off-state (the channel is blocked) and a fault condition is transmitted to the corresponding SOx output. The SOx output is automatically reset (returning to a high impedance state) after the blocking time. www.power.com/igbt-driver Page 17 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Within a half-bridge, it is advised not to operate the IGBTs with an IGBT driver in the event of a low supply voltage. Otherwise, a high rate of increase of VCE may cause partial turn-on of these IGBTs. Parallel connection of 2SC0108T If parallel connection of 2SC0108T drivers is required, AN-0904 /5/ on www.power.com/igbt-driver/go/app-note. please refer to the application note 3-level or multilevel topologies If 2SC0108T drivers are to be used in 3-level or multilevel topologies, please refer to the application note AN-0901 /6/ on www.power.com/igbt-driver/go/app-note. Additional application support for 2SC0108T For additional application support using 2SC0108T drivers, please refer to the application note AN-1101 /4/ on www.power.com/igbt-driver/go/app-note. Bibliography /1/ Paper: Smart Power Chip Tuning, Bodo's Power Systems, May 2007 /2/ "Description and Application Manual for SCALETM Drivers", Power Integrations /3/ Data sheet SCALETM-2/SCALETM-2+ driver core 2SC0108T, Power Integrations /4/ Application note AN-1101: Application with SCALETM-2 and SCALETM-2+ Gate Driver Cores, Power Integrations /5/ Application note AN-0904: Direct Paralleling of SCALETM-2 Gate Driver Cores, Power Integrations /6/ Application note AN-0901: Methodology for Controlling Multi-Level Converter Topologies with SCALETM-2 IGBT Drivers, Power Integrations Note: The Application Notes are available on the Internet at www.power.com/igbt-driver/go/app-note and the papers at www.power.com/igbt-driver/go/papers. www.power.com/igbt-driver Page 18 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual The Information Source: SCALE-2 and SCALE-2+ Driver Data Sheets Power Integrations offers the widest selection of gate drivers for power MOSFETs and IGBTs for almost any application requirements. The largest website on gate-drive circuitry anywhere contains all data sheets, application notes and manuals, technical information and support sections: www.power.com. Quite Special: Customized SCALE-2 and SCALE-2+ Drivers If you need an IGBT driver that is not included in the delivery range, please don't hesitate to contact Power Integrations or your Power Integrations sales partner. Power Integrations has more than 25 years experience in the development and manufacture of intelligent gate drivers for power MOSFETs and IGBTs and has already implemented a large number of customized solutions. Technical Support Power Integrations provides expert help with your questions and problems: www.power.com/igbt-driver/go/support Quality The obligation to high quality is one of the central features laid down in the mission statement of Power Integrations Switzerland GmbH. Our total quality management system assures state-of-the-art processes throughout all functions of the company, certified by ISO9001:2008 standards. Legal Disclaimer The statements, technical information and recommendations contained herein are believed to be accurate as of the date hereof. All parameters, numbers, values and other technical data included in the technical information were calculated and determined to our best knowledge in accordance with the relevant technical norms (if any). They may base on assumptions or operational conditions that do not necessarily apply in general. We exclude any representation or warranty, express or implied, in relation to the accuracy or completeness of the statements, technical information and recommendations contained herein. No responsibility is accepted for the accuracy or sufficiency of any of the statements, technical information, recommendations or opinions communicated and any liability for any direct, indirect or consequential loss or damage suffered by any person arising therefrom is expressly disclaimed. www.power.com/igbt-driver Page 19 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Ordering Information The general terms and conditions of delivery of Power Integrations Switzerland GmbH apply. Type Designation Description 2SC0108T2A0-17 2SC0108T2B0-17 2SC0108T2C0-17 2SC0108T2E0-17 2SC0108T2F0-17 2SC0108T2F1-17 SCALE-2 driver core (-20C...85C, connector pin length: 2.54mm) SCALE-2 driver core (-40C...85C, connector pin length: 2.54mm) SCALE-2 driver core (-40C...85C, connector pin length: 5.84mm) SCALE-2 driver core (Lead free, -40C...85C, connector pin length: 2.54mm) SCALE-2 driver core (Lead free, -40C...85C, connector pin length: 5.84mm) SCALE-2+ driver core (Lead free, -40C...85C, connector pin length: 5.84mm, increased EMI capability, SSD) SCALE-2+ driver core (Lead free, -40C...85C, connector pin length: 3.1mm, increased EMI capability, SSD) SCALE-2+ driver core (Lead free, -40C...85C, connector pin length: 2.54mm, increased EMI capability, SSD) 2SC0108T2G0-17 2SC0108T2H0-17 Product home page: www.power.com/igbt-driver/go/2SC0108T Refer to www.power.com/igbt-driver/go/nomenclature for information on driver nomenclature Information about Other Products For other driver cores: Direct link: www.power.com/igbt-driver/go/cores For other drivers, product documentation, evaluation systems and application support: Please click onto: www.power.com Manufacturer Power Integrations Switzerland GmbH Johann-Renfer-Strasse 15 2504 Biel-Bienne, Switzerland Phone Fax Email Website +41 32 344 47 47 +41 32 344 47 40 igbt-driver.sales@power.com www.power.com/igbt-driver (c) 2009...2015 Power Integrations Switzerland GmbH. We reserve the right to make any technical modifications without prior notice. www.power.com/igbt-driver All rights reserved. Version 2.1 from 2015-03-19 Page 20 SCALETM-2 and SCALETM-2+ 2SC0108T Preliminary Description & Application Manual Power Integrations Worldwide High Power Customer Support Locations World Headquarters 5245 Hellyer Avenue San Jose, CA 95138 | USA Main +1 408 414 9200 Customer Service: Phone +1 408 414 9665 Fax +1 408 414 9765 Email usasales@power.com Switzerland (Biel) Johann-Renfer-Strasse 15 2504 Biel-Bienne | Switzerland Phone +41 32 344 47 47 Fax +41 32 344 47 40 Email igbt-driver.sales@power.com Germany (Ense) HellwegForum 1 59469 Ense | Germany Phone +49 2938 643 9990 Email igbt-driver.sales@power.com Germany (Munich) Lindwurmstrasse 114 80337 Munich | Germany Phone +49 895 527 39110 Fax +49 895 527 39200 Email eurosales@power.com www.power.com/igbt-driver China (Shanghai) Rm 2410, Charity Plaza, No. 88 North Caoxi Road Shanghai, PRC 200030 Phone +86 21 6354 6323 Fax +86 21 6354 6325 Email chinasales@power.com India (Bangalore) #1, 14th Main Road Vasanthanagar Bangalore 560052 | India Phone +91 80 4113 8020 Fax +91 80 4113 8023 Email indiasales@power.com China (Shenzhen) 17/F, Hivac Building, No 2, Keji South 8th Road, Nanshan District Shenzhen | China, 518057 Phone +86 755 8672 8725 Fax +86 755 8672 8690 Hotline +86 400 0755 669 Email chinasales@power.com Japan (Kanagawa) Kosei Dai-3 Bldg., 2-12-11, ShinYokohama, Kohoku-ku, Yokohama-shi, Kanagawa 222-0033 | Japan Phone +81 45 471 1021 Fax +81 45 471 3717 Email japansales@power.com Italy (Milano) Via Milanese 20, 3rd. Fl. 20099 Sesto San Giovanni | Italy Phone +39 024 550 8701 Fax +39 028 928 6009 Email eurosales@power.com Korea (Seoul) RM 602, 6FL Korea City Air Terminal B/D, 159-6 Samsung-Dong, Kangnam-Gu Seoul 135-728 | Korea Phone +82 2 2016 6610 Fax +82 2 2016 6630 Email koreasales@power.com UK (Herts) First Floor, Unit 15, Meadway Court, Rutherford Close, Stevenage, Herts SG1 2EF | United Kingdom Phone +44 1252 730 141 Fax +44 1252 727 689 Email eurosales@power.com Taiwan (Taipei) 5F, No. 318, Nei Hu Rd., Sec. 1 Nei Hu Dist. Taipei 11493 | Taiwan R.O.C. Phone +886 2 2659 4570 Fax +886 2 2659 4550 Email taiwansales@power.com Page 21 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Power Integrations: 2SC0108T2F1-17 2SC0108T2G0-17 2SC0108T2H0-17