ATP405 Ordering number : ENA1458 SANYO Semiconductors DATA SHEET ATP405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * 10V drive. Avalanche resistance guarantee. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Unit 100 PW10s, duty cycle1% V 40 A 160 A 70 W Channel Temperature PD Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 148 mJ 40 A Avalanche Current *2 Tc=25C V 20 Note : *1 VDD=30V, L=100H, IAV=40A *2 L100H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS VDS=100V, VGS=0V VGS=16V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA Zero-Gate Voltage Drain Current ID=1mA, VGS=0V Marking : ATP405 Ratings min typ max 100 2.0 Unit V 10 A 10 A 3.5 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 42209QA MS IM TC-00001943 No. A1458-1/4 ATP405 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on) VDS=10V, ID=20A ID=20A, VGS=10V 25 Input Capacitance Ciss VDS=20V, f=1MHz 4000 pF Output Capacitance Coss VDS=20V, f=1MHz 300 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 170 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 38 ns See specified Test Circuit. 125 ns See specified Test Circuit. 220 ns Fall Time td(off) tf See specified Test Circuit. 150 ns Total Gate Charge Qg VDS=60V, VGS=10V, ID=40A 68 nC Rise Time Turn-OFF Delay Time 62 S 33 m Gate-to-Source Charge Qgs VDS=60V, VGS=10V, ID=40A 14 nC Gate-to-Drain "Miller" Charge Qgd 15 nC Diode Forward Voltage VSD VDS=60V, VGS=10V, ID=40A IS=40A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7057-001 1.5 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 0.55 0.7 3 0.8 4.6 0.5 7.3 0.5 1.7 2 1 SANYO : ATPAK Switching Time Test Circuit 10V 0V 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 Avalanche Resistance Test Circuit VDD=60V VIN L ID=20A RL=3 VIN D PW=10s D.C.1% 50 VOUT ATP405 10V 0V G 50 VDD ATP405 P.G 50 S No. A1458-2/4 ATP405 ID -- VDS V 20 1.5 2.0 2.5 Tc=75C 30 25C 20 --25C 10 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 C 5 -2 =- 10 Tc 7 5 C 75 3 2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 tf 7 tr 5 20 10 0 --25 25 50 75 100 125 td(on) 3 150 IT14607 IS -- VSD VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14609 Ciss, Coss, Crss -- VDS f=1MHz 5 2 100 = V GS 30 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 3 5.0 IT14605 7 td(off) 4.5 =2 , ID 10V 10000 VDD=60V VGS=10V 7 4.0 0A 40 IT14608 SW Time -- ID 1000 3.5 50 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 5 7 100 Drain Current, ID -- A 3.0 60 Source Current, IS -- A C 25 2.5 Case Temperature, Tc -- C VDS=10V 3 2.0 Single pulse 0 --50 10 100 7 5 1.5 RDS(on) -- Tc IT14606 | yfs | -- ID 2 1.0 Cutoff Voltage, VGS(off) -- V Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 40 0.5 70 ID=20A Single pulse 60 0 IT14604 RDS(on) -- VGS 70 0 3.0 25C 1.0 5C 0.5 Tc= 7 0 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 20 10 10 Switching Time, SW Time -- ns 30 5C VGS=4.0V 40 C 30 50 --25 40 60 Tc= 7 .0 V Drain Current, ID -- A 4.5V 25 C 6.0 10 Drain Current, ID -- A 8 60 0 5C 75 C 25C 70 .0V 50 Tc= -2 VDS=10V 70 0 ID -- VGS(off) 80 Tc=25C --25 C 80 Ciss 3 2 1000 7 5 Coss 3 2 Crss 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT14610 100 7 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14611 No. A1458-3/4 ATP405 VGS -- Qg 10 VDS=60V ID=40A 7 6 5 3 1 0 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 80 60 50 40 30 20 10 0 20 40 60 80 100 0m 10 7 5 3 2 s 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 2 3 120 Case Temperature, Tc -- C 140 160 IT14602 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 IT14613 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 70 0 ms 10 IT14612 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 70 ID=40A 0.1 7 5 3 Tc=25C 2 Single pulse 0.01 0.01 2 3 5 7 0.1 2 10 s 0 s 10 10 n tio era op 4 PW10s s 1m Drain Current, ID -- A 8 IDP=160A 100 7 5 3 2 DC Gate-to-Source Voltage, VGS -- V 9 ASO 5 3 2 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- C 175 IT14603 Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2009. Specifications and information herein are subject to change without notice. PS No. A1458-4/4