ATP405
No. A1458-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
• 10V drive.
• Avalanche resistance guarantee.
• Halogen free compliance.
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID40 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 160 A
Allowable Power Dissipation PDTc=25°C70W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 148 mJ
Avalanche Current *2 IAV 40 A
Note :
*1 VDD=30V, L=100μH, IAV=40A
*2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 100 V
Zero-Gate Voltage Drain Current IDSS V
DS=100V, VGS=0V 10 μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.5 V
Marking : ATP405 Continued on next page.
Ordering number : ENA1458
42209QA MS IM TC-00001943
SANYO Semiconductors
DATA SHEET
ATP405
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
ATP405
No. A1458-2/4
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
min typ max
Forward Transfer Admittance | yfs |VDS=10V, ID=20A 62 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=20A, VGS=10V 25 33 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 4000 pF
Output Capacitance Coss VDS=20V, f=1MHz 300 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 170 pF
Turn-ON Delay Time td(on) See specifi ed Test Circuit. 38 ns
Rise Time tr See specifi ed Test Circuit. 125 ns
Turn-OFF Delay Time td(off) See specifi ed Test Circuit. 220 ns
Fall Time tfSee specifi ed Test Circuit. 150 ns
Total Gate Charge Qg VDS=60V, VGS=10V, ID=40A 68 nC
Gate-to-Source Charge Qgs VDS=60V, VGS=10V, ID=40A 14 nC
Gate-to-Drain “Miller” Charge Qgd VDS=60V, VGS=10V, ID=40A 15 nC
Diode Forward Voltage VSD IS=40A, VGS=0V 0.9
1.2
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit Avalanche Resistance Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPA
K
0.7
0.4
0.55
9.5
7.3 0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4 2.6
4.6
0.4
0.1
2.3 2.3
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=20A
RL=3Ω
VDD=60V
VOUT
ATP405
VIN
10V
0V
VIN
50Ω
10V
0V
≥50Ω
VDD
L
ATP405
ATP405
No. A1458-3/4
| yfs | -- ID
RDS(on) -- VGS RDS(on) -- Tc
ID -- VDS ID -- VGS(off)
IS -- VSD
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Cutoff Voltage, VGS(off) -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Forward T ransfer Admittance, | yfs | -- S
Ciss, Coss, Crss -- VDS
IT14607
IT14604
--50 --25 150
03010 15 20 255
1000
2
IT14611
IT14609
IT14608
0.1 1.0
23 57
100
1.21.00.60.4 0.80.20
0.001
0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
2
0.1
1.0
10
100
7
3
10
1.0
7
5
5
2
3
7
5
2
2
10000
210
357 100
5723
0.1 1.0
23 57 2 10
357 7523
0 25 50 75 100 125
3
5
7
3
5
7
100
7
2
75°C
25°C
Tc= --25°C
--25°C
Tc=75°C
Tc= --25°C
25
°
C
75°C
VDS=10V
Tc=75°C
25°C
--25°C
Ciss
Crss
IT14610
10
100
2
3
5
7
1000
2
3
5
7
td(off)
VDD=60V
VGS=10V f=1MHz
tr
0.5 1.0 3.02.01.5 2.50
0
10
80
70
50
60
40
30
20
10
70
50
60
40
30
20
1.0 2.0 5.04.03.00.5 1.5 3.52.5 4.50
0
10
80
70
50
60
40
30
20
IT14606
2468103579
0
10
70
50
60
40
30
20
0
IT14605
Tc=25°C
VGS=4.0V
VDS=10V
tf
25
°
C
VGS=10V, ID=20A
8.0V
Coss
td(on)
4.5V
6.0V
10.0V
--25°C
25°C
Tc=75°C
Single pulse
ID=20A
Single pulse
VGS=0V
Single pulse
ATP405
No. A1458-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of April, 2009. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
A S O
VGS -- Qg
PD -- Tc
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, T a -- °C
0
025 50 75 100 125 150
100
80
60
20
40
120
175
IT14603
0
IT14602
0
020 40 60
10
20
50
70
60
30
40
80 100 120
80
140 160
IT14613
IT14612
01020 5040 706030 80
0
2
4
6
1
3
5
8
7
9
10 VDS=60V
ID=40A
0.01
0.1
1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
5
7
2
3
10
0.01 0.1
IDP=160A
ID=40A
100μs
1ms
10ms
100ms
DC operation
Operation in
this area is
limited by RDS(on).
1.0 10 2235723 5723 5723 57 100
10
μ
s
100
PW≤10μs
Tc=25°C
Single pulse
