FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. * Q1: N-Channel RDS(on) = 0.055=@ VGS = 10V 4.5 A, 60 V RDS(on) = 0.075=@ VGS = 4.5V * Applications Q2: P-Channel RDS(on) = 0.105=@ VGS = -10V -3.5 A, -60 V * DC/DC converter RDS(on) = 0.135=@ VGS = -4.5V * Power management * LCD backlight inverter DD2 DD2 D1 D DD1 G2 S2 G G1 S1 S S Drain-Source Voltage Gate-Source Voltage ID Drain Current 2 8 1 TA = 25C unless otherwise noted Parameter VDSS VGSS 7 S Absolute Maximum Ratings Q1 - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Q2 Units 60 -60 20 4.5 20 20 -3.5 -20 V V A 2 1.6 1.2 1 -55 to +175 C (Note 1a) 78 C/W (Note 1) 40 C/W (Note 1a) (Note 1b) (Note 1c) TJ, TSTG 3 Q1 Pin 1 SO-8 PD 4 6 SO-8 Symbol Q2 5 Operating and Storage Junction Temperature Range W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4559 FDS4559 13" 12mm 2500 units 2000 Fairchild Semiconductor Corporation FDS4559 Rev C(W) FDS4559 October 2000 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS BVDSS ===TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics VGS(th) VGS(th) ===TJ RDS(on) ID(on) gFS VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 48 V, VGS = 0 V VDS = -48 V, VGS = 0 V VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 60 -60 Q1 Q2 Q1 Q2 Q1 1 -1 V 58 -49 mV/C 1 -1 +100 +100 A nA (Note 2) Gate Threshold Voltage VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A Gate Threshold Voltage ID = 250 A, Referenced to 25C Temperature Coefficient ID = -250 A, Referenced to 25C Static Drain-Source VGS = 10 V, ID = 4.5 A On-Resistance VGS = 10 V, ID = 4.5 A, TJ = 125C VGS = 4.5 V, ID = 4 A VGS = -10 V, ID = -3.5 A VGS = -10 V, ID = -3.5 A, TJ = 125C VGS = -4.5 V, ID = -3.1 A On-State Drain Current VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V Forward Transconductance VDS = 10 V, ID = 4.5 A VDS = -5 V, ID = -3 5 A Q2 Q1 Q2 Q1 Q2 2.2 -1.6 -5.5 4 42 72 55 82 130 105 3 -3 V mV/C 55 94 75 105 190 135 20 -20 m A 14 9 S 650 759 80 90 35 39 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q1 VDS = 25 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = -30 V, VGS = 0 V, f = 1.0 MHz Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) Gate-Drain Charge Q1 Q2 Q1 Q2 Q1 Q2 pF pF TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Q1 VDD = 30 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Q1 VDS = 30 V, ID = 4.5 A, VGS = 10 V Q2 VDS = -30 V, ID = -3.5 A, VGS = -10V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 11 7 8 10 19 19 6 12 12.5 15 2.4 2.5 2.6 3.0 20 14 18 20 35 34 15 22 18 21 ns ns ns ns nC nC nC FDS4559 Rev C(W) FDS4559 Electrical Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = -1.3 A (Note 2) Q1 Q2 Q1 Q2 0.8 -0.8 1.3 -1.3 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125C/W when 2 mounted on a .02 in pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4559 Rev C(W) FDS4559 Drain-Source Diode Characteristics and Maximum Ratings FDS4559 Typical Characteristics: Q2 1.8 -ID, DRAIN CURRENT (A) VGS = -10V -6.0V 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 -4.5V -4.0V -5.0V -3.5V 9 6 -3.0V 3 -2.5V VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V 0 -10V 1 2 3 4 0 5 2 4 6 8 10 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.4 ID = -3.5A VGS = -10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -8.0V 1 0.8 0 1.6 1.4 1.2 1 0.8 0.6 0.4 ID = -1.5A 0.3 TA = 125oC 0.2 0.1 TA = 25oC 0 -50 -25 0 25 50 75 100 125 150 175 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 15 -ID, DRAIN CURRENT (A) -7.0V 25oC 12 125oC 9 6 3 0 VGS = 0V 10 TA = 125oC 25oC 1 -55oC 0.1 0.01 0.001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4559 Rev C(W) FDS4559 Typical Characteristics: Q2 1200 VDS = 10V ID = -3.0A 20V f = 1 MHz V GS = 0 V 1000 8 30V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 800 C ISS 600 400 2 200 C OSS C RSS 0 0 0 4 8 12 16 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 40 50 60 Figure 8. Capacitance Characteristics. 40 P(pk), PEAK TRANSIENT POWER (W) 100 100s ID, DRAIN CURRENT (A) 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 10 10ms 100ms 1 1s 10s VGS = -10V SINGLE PULSE RJA = 135oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. SINGLE PULSE RJA = 135C/W TA = 25C 30 20 10 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. FDS4559 Rev C(W) FDS4559 Typical Characteristics: Q1 1.8 VGS = 10V 6.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 20 4.5V 5.0V 4.0V 12 8 3.5V 4 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 8.0V 10V 1 0.8 0 0 1 2 3 0 4 4 8 Figure 11. On-Region Characteristics. 16 20 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 2.2 ID = 2.3A ID = 4.5A VGS = 10V 2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.12 0.1 TA = 125oC 0.08 0.06 0.04 TA = 25oC 0.02 0 175 2 4 6 8 10 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 20 ID, DRAIN CURRENT (A) 25oC IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = 5V o 16 125 C 12 8 4 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4559 Rev C(W) FDS4559 Typical Characteristics: Q1 ID = 4.5A 900 VDS = 10V 8 30V f = 1MHz VGS = 0 V 800 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 700 CISS 600 500 400 300 200 COSS 100 0 CRSS 0 0 2 4 6 8 10 12 14 0 10 Qg, GATE CHARGE (nC) 20 30 40 50 Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 40 100 SINGLE PULSE RJA = 135oC/W RDS(ON) LIMIT 100s 10 TA = 25oC 30 1m POWER (W) ID, DRAIN CURRENT (A) 60 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms 1 1s DC VGS= 10V SINGLE PULSE RJA= 135oC/W 0.1 20 10 TA= 25oC 0.01 0.1 1 10 0 0.01 100 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 135C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4559 Rev C(W) SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 Packaging Description: EL ECT ROST AT IC SEN SIT IVE DEVICES DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms Antistatic Cover Tape ESD Label SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 Pin 1 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR 2,500 L86Z F011 D84Z Rail/Tube TNR TNR 95 4,000 500 13" Dia - 13" Dia 7" Dia 343x64x343 530x130x83 343x64x343 184x187x47 Max qty per Box 5,000 30,000 8,000 1,000 Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 Weight per Reel (kg) 0.6060 - 0.9696 0.1182 SOIC-8 Unit Orientation Note/Comments 343mm x 342mm x 64mm Standard Intermediate box ESD Label F63TNR Label sample F63TNLabel F63TN Label LOT: CBVK741B019 QTY: 2500 FSID: FDS9953A SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F ESD Label (F63TNR)3 SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 640mm minimum or 80 empty pockets (c)2000 Fairchild Semiconductor International Leader Tape 1680mm minimum or 210 empty pockets July 1999, Rev. B SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOIC(8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 W 12.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 F 10.25 min 5.50 +/-0.05 P1 P0 8.0 +/-0.1 4.0 +/-0.1 K0 2.1 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.450 +/0.150 9.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1