HAL525, HAL526, HAL535
Hall Effect Sensor Family
Edition Oct. 22, 2002
6251-465-5DS
MICRONAS
MICRONAS
HAL525, HAL526, HAL535 DATA SHEET
2Oct. 22, 2002; 6251-465-5DS Micronas
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Family Overview
4 1.3. Marking Code
4 1.3.1. Special Marking of Prototype Parts
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
5 2. Functional Description
6 3. Specifications
6 3.1. Outline Dimensions
6 3.2. Dimensions of Sensitive Area
6 3.3. Positions of Sensitive Areas
7 3.4. Absolute Maximum Ratings
7 3.4.1. Storage, Moisture Sensitivity Class, and Shelf Life
7 3.5. Recommended Operating Conditions
8 3.6. Electrical Characteristics
9 3.7. Magnetic Characteristics Overview
14 4. Type Description
14 4.1. HAL525, HAL526
16 4.2. HAL535
18 5. Application Notes
18 5.1. Ambient Temperature
18 5.2. Extended Operating Conditions
18 5.3. Start-up Behavior
18 5.4. EMC and ESD
20 6. Data Sheet History
DATA SHEET HAL525, HAL526, HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 3
Hall Effect Sensor Family
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL525, HAL526, and HAL535 are Hall switches
produced in CMOS technology. The sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain out-
put transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accord-
ingly, the output transistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from −40 °C up to 125 °C.
The HAL525, HAL526, and HAL535 are available in
the SMD-package SOT-89B and in the leaded version
TO-92UA.
1.1. Features
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply volt-
age range
– the decrease of magnetic flux density caused by ris-
ing temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for window lifter, ignition timing, and
revolution counting in extreme automotive and
industrial environments
– EMC corresponding to DIN 40839
1.2. Family Overview
All sensors have a latching behavior with typically the
same sensitivity. The difference between HAL525/
HAL526 and HAL535 is the temperature coefficient of
the magnetic switching points.
Latching Sensors:
Both sensors have a latching behavior and requires a
magnetic north and south pole for correct functioning.
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
Type Switching
Behavior Typical
Temperature
Coefficient
see
Page
525 latching −2000 ppm/K 14
526 latching −2000 ppm/K 14
535 latching −1000 ppm/K 16
HAL525, HAL526, HAL535 DATA SHEET
4Oct. 22, 2002; 6251-465-5DS Micronas
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended to be used for qualification tests or as produc-
tion parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 5.1.
on page 18.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Ordering Codes for
Hall Sensors”.
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code printed on the labels, even in environ-
ments as extreme as 40 °C and 90% relative humidity.
Fig. 1–1: Pin configuration
Type Temperature Range
K E
HAL525 525K 525E
HAL526 526K 526E
HAL535 535K 535E
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT-89B
UA for TO-92UA
Type: 525, 526, or 535
Example: HAL525UA-E
→Type: 525
→Package: TO-92UA
→Temperature Range: TJ = −40 °C to +100 °C
1VDD
2GND
3OUT
DATA SHEET HAL525, HAL526, HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 5
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a mag-
netic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induc-
tion of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain out-
put switches to the appropriate state. The built-in hys-
teresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the mag-
netic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
Fig. 2–1: HAL525, HAL526, HAL535 block diagram
Fig. 2–2: Timing diagram
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit
and
Overvoltage
Hall Plate
Switch
Comparator
Output
Clock
Protection
3
OUT
GND
2
1
VDD
t
VOL
VOUT
1/fosc = 9 µs
VOH
B
BON
fosc
t
t
tft
IDD
t
HAL525, HAL526, HAL535 DATA SHEET
6Oct. 22, 2002; 6251-465-5DS Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
Fig. 3–2:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
Note: For all package diagrams, a mechanical toler-
ance of ±0.05 mm applies to all dimensions
where no tolerance is explicitly given. All pack-
age dimension exclude molding flash.
SOT-89B TO-92UA
x center of
the package
center of
the package
y 0.95 mm nominal 1.0 mm nominal
4.55
1.7
min.
0.25
2.55
0.40.4
0.4
1.5
3.0
0.06±0.04
branded side
SPGS0022-5-A3/2E
y
123
4±0.2
0.15
0.3 2
∅0.2
sensitive area
top view
1.15
SPGS007002-11-A/1E
branded side
DATA SHEET HAL525, HAL526, HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 7
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
3.4.1. Storage, Moisture Sensitivity Class, and Shelf Life
Storage has no influence on the electrical and magnetic characteristics of the sensors. However, under disadvanta-
geous conditions, extended storage time can lead to alteration of the lead plating, which affects the soldering pro-
cess.
Moisture Sensitivity Class:
The package SOT-89B achieves level 1 according to J-STD-020A “Moisture/Reflow Sensitivity Classification for
Non-hermetic Solid State Surface Mount Devices”. If the sensors are stored at a maximum of 30 °C and a maximum
of 90% relative humidity, no Dry Pack is required.
The permissible storage time (shelf life) of the sensors is minimum of 12 months, starting from the date of manufac-
ture, if they are stored in the original packaging at a maximum of 40 °C ambient temperature and a maximum of 90%
relative humidity.
3.5. Recommended Operating Conditions
Symbol Parameter Pin Name Min. Max. Unit
VDD Supply Voltage 1 −15 281) V
VOOutput Voltage 3 −0.3 281) V
IOContinuous Output On Current 3 −501) mA
TJJunction Temperature Range −40 170 °C
1) as long as TJmax is not exceeded
Symbol Parameter Pin Name Min. Max. Unit
VDD Supply Voltage 1 3.8 24 V
IOContinuous Output On Current 3 0 20 mA
VOOutput Voltage
(output switched off)
3024V
HAL525, HAL526, HAL535 DATA SHEET
8Oct. 22, 2002; 6251-465-5DS Micronas
3.6. Electrical Characteristics at TJ = −40 °C to +140 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions.
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 °C
IDD Supply Current over
Temperature Range 11.635.2mA
VDDZ Overvoltage Protection
at Supply 1−28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 −28 32 V IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL Output Voltage 3 −130 280 mV IOL = 20 mA, TJ = 25 °C
VOL Output Voltage over
Temperature Range 3−130 400 mV IOL = 20 mA
IOH Output Leakage Current 3 −0.06 0.1 µA Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH Output Leakage Current over
Temperature Range 3−−10 µA Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24V
fosc Internal Oscillator
Chopper Frequency −95
120 115
150 −
−kHz
kHz TJ = 25 °C, HAL525
TJ = 25 °C, HAL526, HAL535
fosc Internal Oscillator Chopper
Frequency over Temperature
Range
−73
100 115
140 −
−kHz
kHz HAL525
HAL526, HAL535
ten(O) Enable Time of Output after
Setting of VDD
1−30 70 µsV
DD = 12 V
B > BON + 2 mT or
B < BOFF − 2 mT
trOutput Rise Time 3 −75 400 ns VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
tfOutput Fall Time 3 −50 400 ns
RthJSB
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside −−150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–3)
RthJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point −−150 200 K/W
5.0
2.0
2.0
1.0
DATA SHEET HAL525, HAL526, HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 9
3.7. Magnetic Characteristics Overview at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Note: For detailed descriptions of the individual types, see pages 14 and following.
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL525,
HAL526
latching
−40 °C 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 mT
25 °C11 14 17 −17 −14 −11 24 28 32 mT
140 °C 6.5 10 14 −14 −10 −6.5162026mT
HAL535 −40 °C121518−18 −15 −12 25 30 35 mT
latching 25 °C 11 13.8 17 −17 −13.8 −11 23 27.6 32 mT
140 °C 7 12.5 17 −17 −12.5 −7182531mT
HAL525, HAL526, HAL535 DATA SHEET
10 Oct. 22, 2002; 6251-465-5DS Micronas
–15
–10
–5
0
5
10
15
20
25
–15–10 –5 0 5 10 15 20 25 30 35 V
mA
V
DD
I
DD
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
HAL 525, HAL 526, HAL 535
Fig. 3–4: Typical supply current
versus supply voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12345678
V
mA
V
DD
I
DD
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 525, HAL 526, HAL 535
Fig. 3–5: Typical supply current
versus supply voltage
0
1
2
3
4
5
–50 0 50 100 150 200 °C
mA
T
A
I
DD
V
DD
= 3.8 V
V
DD
= 12 V
V
DD
= 24 V
HAL 525, HAL 526, HAL 535
Fig. 3–6: Typical supply current
versus ambient temperature
0
20
40
60
80
100
120
140
160
–50 0 50 100 150 200 °C
kHz
T
A
f
osc
V
DD
= 3.8 V
V
DD
= 4.5 V...24 V
HAL 525, HAL 535
Fig. 3–7: Typ. internal chopper frequency
versus ambient temperature
DATA SHEET HAL525, HAL526, HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 11
0
20
40
60
80
100
120
140
160
180
200
–50 0 50 100 150 200 °C
kHz
T
A
f
osc
V
DD
= 3.8 V
V
DD
= 4.5 V...24 V
HAL 526
Fig. 3–8: Typ. internal chopper frequency
versus ambient temperature
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30 V
mV
V
DD
V
OL
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
I
O
= 20 mA
T
A
= 100 °C
HAL 525, HAL 526, HAL 535
Fig. 3–9: Typical output low voltage
versus supply voltage
0
100
200
300
400
500
600
34567
V
mV
V
DD
V
OL
T
A
= –40 °C
T
A
=25 °C
T
A
=170 °C
I
O
= 20 mA
T
A
=100 °C
HAL 525, HAL 526, HAL 535
Fig. 3–10: Typical output low voltage
versus supply voltage
0
100
200
300
400
–50 0 50 100 150 200 °C
mV
T
A
V
OL
V
DD
= 3.8 V
V
DD
= 4.5 V
V
DD
= 24 V
I
O
= 20 mA
HAL 525, HAL 526, HAL 535
Fig. 3–11: Typical output low voltage
versus ambient temperature
HAL525, HAL526, HAL535 DATA SHEET
12 Oct. 22, 2002; 6251-465-5DS Micronas
15 20 25 30 35 V
µA
V
OH
I
OH
T
A
= –40 °C
T
A
=170 °C
T
A
=150 °C
T
A
=100 °C
T
A
=25 °C
10
–6
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
10
3
10
4
HAL 525, HAL 526, HAL 535
Fig. 3–12: Typ. output high current
versus output voltage
–50 0 50 100 150 200 °C
µA
T
A
I
OH
V
OH
= 24 V
V
OH
= 3.8 V
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
HAL 525, HAL 526, HAL 535
Fig. 3–13: Typical output leakage current
versus ambient temperature
–30
–20
–10
0
10
20
30
0.01 0.10 1.00 10.00 100.00 1000.00
dBµA
f
I
DD
V
DD
= 12 V
T
A
= 25 °C
Quasi-Peak-
Measurement
max.spurious
signals
1 10 100 1000 MHz
HAL 525, HAL 526, HAL 535
Fig. 3–14: Typ. spectrum of supply current
dBµV
0
10
20
30
40
50
60
70
80
0.01 0.10 1.00 10.00 100.00 1000.00
1 10 100 1000 MHz
f
V
DD
V
P
= 12 V
T
A
= 25 °C
Quasi-Peak-
Measurement
test circuit
max.spurious
signals
HAL 525, HAL 526, HAL 535
Fig. 3–15: Typ. spectrum of supply voltage
DATA SHEET HAL525, HAL526, HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 13
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HAL525, HAL526 DATA SHEET
14 Oct. 22, 2002; 6251-465-5DS Micronas
4. Type Description
4.1. HAL525, HAL526
The HAL525 and HAL526 are latching sensors (see
Fig. 4–1). The parts differ in the oscillator frequency
(see Section 3.6. on page 8).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching
– low sensitivity
–typical B
ON: 14 mT at room temperature
–typical B
OFF: −14 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −2000 ppm/K
Applications
The HAL525 and HAL526 are optimal sensors for
applications with alternating magnetic signals such as:
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifter.
Fig. 4–1: Definition of magnetic switching points for
the HAL525 and HAL526
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 0 mT
25 °C11 14 17 −17 −14 −11 24 28 32 −20 2 mT
100 °C8 11 15.5 −15.5 −11 −8 18.5 22 28.7 0 mT
140 °C6.5 10 14 −14 −10 −6.5 16 20 26 0 mT
DATA SHEET HAL525, HAL526
Micronas Oct. 22, 2002; 6251-465-5DS 15
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
–20
–15
–10
–5
0
5
10
15
20
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 525, HAL 526
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
V
DD
B
ON
B
OFF
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 525, HAL 526
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
–50 0 50 100 150 200 °C
mT
T
A
, T
J
B
ON
B
OFF
B
ON
max
B
ON
min
B
OFF
max
B
OFF
min
V
DD
= 4.5 V...24 V
V
DD
= 3.8 V
B
ON
typ
B
OFF
typ
HAL 525, HAL 526
Fig. 4–4: Magnetic switching points
versus temperature
HAL535 DATA SHEET
16 Oct. 22, 2002; 6251-465-5DS Micronas
4.2. HAL535
The HAL535 is a latching sensor (see Fig. 4–5).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching
– low sensitivity
–typical B
ON: 13.5 mT at room temperature
–typical B
OFF: −13.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL535 is the optimal sensor for applications with
alternating magnetic signals such as:
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifter.
Fig. 4–5: Definition of magnetic switching points for
the HAL535
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C12 15 18 −18 −15 −12 25 30 35 0 mT
25 °C 11 13.8 17 −17 −13.8 −11 23 27.6 32 0 mT
100 °C9 13 17 −17 −13 −9 20 26 31.5 0 mT
140 °C 7 12.5 17 −17 −12.5 −7182531 0 mT
DATA SHEET HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 17
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
–20
–15
–10
–5
0
5
10
15
20
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
HAL535
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
V
DD
B
ON
B
OFF
HAL535
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
–50 0 50 100 150 200
HAL535
°C
mT
TA, TJ
BON
BOFF
BONmax
BONmin
BOFFmax
BOFFmin
VDD = 3.8 V
VDD = 4.5 V...24 V
BOFFtyp
BONtyp
Fig. 4–8: Magnetic switching points
versus temperature
HAL525, HAL526, HAL535 DATA SHEET
18 Oct. 22, 2002; 6251-465-5DS Micronas
5. Application Notes
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + ∆T
At static conditions, the following equation is valid:
∆T = IDD * VDD * Rth
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax − ∆T
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 7).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is not
tested. For special test conditions, please contact Mic-
ronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics (see page 8).
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the out-
put will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF
.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic field must be above
BONmax, respectively, below BOFFmin.
5.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
Note: The international standard ISO 7637 is similar to
the used product standard DIN 40839.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Fig. 5–1: Test circuit for EMC investigations
WARNING:
DO NOT USE THESE SENSORS IN LIFE-
SUPPORTING SYSTEMS, AVIATION, AND
AEROSPACE APPLICATIONS.
RV
220 Ω
VEMC
VP
4.7 nF
VDD
OUT
GND
1
2
3
RL1.2 kΩ
20 pF
DATA SHEET HAL525, HAL526, HAL535
Micronas Oct. 22, 2002; 6251-465-5DS 19
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples deliv-
ered. By this publication, Micronas GmbH does not assume responsibil-
ity for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.
HAL525, HAL526, HAL535 DATA SHEET
20 Oct. 22, 2002; 6251-465-5DS Micronas
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-465-5DS
6. Data Sheet History
1. Final data sheet: “HAL525 Hall Effect Sensor IC”,
April 23, 1997, 6251-465-1DS. First release of the
final data sheet.
2. Final data sheet: “HAL525 Hall Effect Sensor IC”,
March 10, 1999, 6251-465-2DS. Second release of the
final data sheet. Major changes:
– additional package SOT-89B
– outline dimensions for SOT-89A and TO-92UA
changed
– electrical characteristics changed
– section 4.2.: Extended Operating Conditions added
– section 4.3.: Start-up Behavior added
3. Final data sheet: “HAL525, HAL535 Hall Effect
Sensor Family”, Aug. 30, 2000, 6251-465-3DS. Third
release of the final data sheet. Major changes:
– new sensor HAL 535 added
– outline dimensions for SOT-89B: reduced toler-
ances
– SMD package SOT-89A removed
– temperature range "C" removed
4. Data Sheet: “HAL525, HAL535 Hall Effect Sensor
Family”, Aug. 8, 2002, 6251-465-4DS. Fourth
release of the data sheet. Major changes:
– outline dimensions for TO-92UA changed
– temperature range "A" removed
5. Data Sheet: “HAL525, HAL526, HAL535 Hall Effect
Sensor Family”, Oct. 22, 2002, 6251-465-5DS. Fifth
release of the data sheet. Major changes:
– new sensor HAL 526 added