MUN2111T1 Series, SMUN2111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. SC-59 CASE 318D PLASTIC PIN 3 COLLECTOR (OUTPUT) Features * * * * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 - Machine Model: Class B The SC-59 Package Can be Soldered Using Wave or Reflow The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Collector - Base Voltage VCBO 50 Vdc Collector - Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. R1 PIN 2 BASE (INPUT) R2 PIN 1 EMITTER (GROUND) MARKING DIAGRAM 6x M G G 1 6x M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. DEVICE MARKING INFORMATION See device marking table on page 5 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 19 1 Publication Order Number: MUN2111T1/D MUN2111T1 Series, SMUN2111T1 Series THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25C PD Derate above 25C Max Unit mW 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) C/W Thermal Resistance, Junction-to-Ambient RqJA 540 (Note 1) 370 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 264 (Note 1) 287 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 inch Pad. +12 V PD, POWER DISSIPATION (mW) 350 300 250 Typical Application for PNP BRTs 200 150 100 RqJA= 370C/W LOAD 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (5C) Figure 1. Derating Curve Figure 2. Inexpensive, Unregulated Current Source http://onsemi.com 2 MUN2111T1 Series, SMUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2111T1, SMUN2111T1 MUN2112T1, SMUN2112T1 MUN2113T1, SMUN2113T1 MUN2114T1, SMUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 IEBO Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc mAdc - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.20 50 - - 50 - - 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 120 60 100 140 140 250 250 5.0 15 27 140 130 150 140 250 - - - - - - - - - - - - - - Vdc Vdc ON CHARACTERISTICS (Note 3) hFE DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111T1, SMUN2111T1 MUN2112T1, SMUN2112T1 MUN2113T1, SMUN2113T1 MUN2114T1, SMUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MUN2111T1, SMUN2111T1 MUN2112T1, SMUN2112T1 MUN2113T1, SMUN2113T1 MUN2114T1, SMUN2114T1 MUN2115T1 MUN2130T1 MUN2136T1 MUN2137T1 (IC = 10 mA, IB = 5.0 mA) MUN2131T1 (IC = 10 mA, IB = 1.0 mA) MUN2116T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2140T1 VCE(sat) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc - - - - - - - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 - - 0.25 - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 MUN2111T1 Series, SMUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN2111T1, SMUN2111T1 MUN2112T1, SMUN2112T1 MUN2114T1, SMUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MUN2113T1 MUN2140T1 (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) MUN2136T1 (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) MUN2137T1 VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN2111T1, SMUN2111T1 MUN2112T1, SMUN2112T1 MUN2113T1, SMUN2113T1 MUN2114T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN2130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN2115T1 MUN2116T1 MUN2131T1 MUN2132T1 MUN2140T1 VOH Input Resistor MUN2111T1, SMUN2111T1 MUN2112T1, SMUN2112T1 MUN2113T1, SMUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 R1 Resistor Ratio MUN2111T1/MUN2112T1/MUN2113T1/SMUN2111T1/ SMUN2112T1/SMUN2113T1/MUN2136T1 MUN2114T1, SMUN2114T1 MUN2115T1/MUN2116T1/MUN2140T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 MUN2137T1 Vdc - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - - - - 0.2 0.2 - - 0.2 - - 0.2 Vdc 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - - - - - 4.9 - - 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 0.8 0.17 - 0.8 0.055 0.38 1.7 1.0 0.21 - 1.0 0.1 0.47 2.1 1.2 0.25 - 1.2 0.185 0.56 2.6 R1/R2 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 4 kW MUN2111T1 Series, SMUN2111T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) SC-59 6A 10 10 MUN2111T1G, SMUN2111T1G SC-59 (Pb-Free) 6A 10 10 MUN2111T3G, SMUN2111T3G SC-59 (Pb-Free) 6A 10 10 SC-59 6B 22 22 SC-59 (Pb-Free) 6B 22 22 SC-59 6C 47 47 SC-59 (Pb-Free) 6C 47 47 SC-59 6D 10 47 SC-59 (Pb-Free) 6D 10 47 SC-59 6E 10 SC-59 (Pb-Free) 6E 10 SC-59 6F 4.7 SC-59 (Pb-Free) 6F 4.7 SC-59 6G 1.0 1.0 SC-59 (Pb-Free) 6G 1.0 1.0 SC-59 6H 2.2 2.2 SC-59 (Pb-Free) 6H 2.2 2.2 SC-59 6J 4.7 4.7 SC-59 (Pb-Free) 6J 4.7 4.7 SC-59 6K 4.7 47 SC-59 (Pb-Free) 6K 4.7 47 SC-59 6L 22 47 SC-59 (Pb-Free) 6L 22 47 SC-59 6N 100 100 SC-59 (Pb-Free) 6N 100 100 SC-59 6P 47 22 SC-59 (Pb-Free) 6P 47 22 SC-59 6T 47 SC-59 (Pb-Free) 6T 47 MUN2111T1 MUN2112T1 MUN2112T1G, SMUN2112T1G MUN2113T1 MUN2113T1G, SMUN2113T1G MUN2114T1 MUN2114T1G, SMUN2114T1G MUN2115T1 (Note 4) MUN2115T1G (Note 4) MUN2116T1 (Note 4) MUN2116T1G (Note 4) MUN2130T1 (Note 4) MUN2130T1G (Note 4) MUN2131T1 (Note 4) MUN2131T1G (Note 4) MUN2132T1 (Note 4) MUN2132T1G (Note 4) MUN2133T1 (Note 4) MUN2133T1G (Note 4) MUN2134T1 (Note 4) MUN2134T1G (Note 4) MUN2136T1 MUN2136T1G MUN2137T1 MUN2137T1G MUN2140T1 (Note 4) MUN2140T1G (Note 4) Shipping 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 4. New resistor combinations. Updated curves to follow in subsequent data sheets. http://onsemi.com 5 MUN2111T1 Series, SMUN2111T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2111T1, SMUN2111T1 25C 75C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA = 75C 100 -25C 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 TA = -25C 1 0.1 VO = 5 V 0.01 0.001 50 25C 75C 1 0 Figure 5. Output Capacitance 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 25C 75C 1 0.1 0 10 9 Figure 6. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 V TA = 25C 2 0 100 Figure 4. DC Current Gain 4 3 25C 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 7. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MUN2111T1 Series, SMUN2111T1 Series 1000 10 VCE = 10 V IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2112T1, SMUN2112T1 25C 1 75C 0.1 0.01 0 40 20 60 IC, COLLECTOR CURRENT (mA) TA = 75C 100 10 80 10 1 Figure 9. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 10 TA = -25C 1 0.1 0.01 VO = 5 V 0 1 Figure 10. Output Capacitance 100 25C 75C 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 4 0 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 75C 1 0 9 Figure 11. Output Current vs. Input Voltage 10 0.1 10 0 IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) vs. IC 3 25C -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MUN2111T1 Series, SMUN2111T1 Series 1 1000 IC/IB = 10 TA = -25C 25C 75C 0.1 0.01 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2113T1, SMUN2113T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA = 75C 25C 10 40 -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 14. DC Current Gain Figure 13. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.6 0.4 0.2 0 0 TA = 75C 10 -25C 0.1 0.01 VO = 5 V 0 Figure 15. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 10 75C 1 0 9 Figure 16. Output Current vs. Input Voltage 100 0.1 25C 1 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1 0.8 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage vs. Output Current http://onsemi.com 8 50 10 MUN2111T1 Series, SMUN2111T1 Series 180 1 IC/IB = 10 25C 140 0.1 75C 25C -25C 120 100 0.01 80 60 40 20 0.00 0 1 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 2 1 4.5 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 100 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 TA = 75C 10 VO = 5 V 1 20 25 30 35 40 45 50 25C -25C 0 2 4 Figure 20. Output Capacitance TA = -25C 25C 75C 1 VO = 0.2 V 0 8 Figure 21. Output Current vs. Input Voltage 10 0.1 6 Vin, INPUT VOLTAGE (VOLTS) VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) 0 4 Figure 19. DC Current Gain Figure 18. VCE(sat) vs. IC Cob, CAPACITANCE (pF) TA = 75C VCE = 10 V 160 TA = -25C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2114T1, SMUN2114T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 22. Input Voltage vs. Output Current http://onsemi.com 9 50 10 MUN2111T1 Series, SMUN2111T1 Series 1 1000 IC/IB =10 25C 75C 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2131T1 -25C 0.01 0 5 10 15 20 25 30 100 25C 75C 10 1 35 IC/IB = 10 -25C 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. VCE(sat) vs. IC Figure 24. DC Current Gain 10 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25C 8 6 4 2 0 5 10 15 20 25 30 35 40 45 75C 10 1 TA = 25C 0.01 0.01 50 55 -25C 0 1 3 2 VO = 5 V 4 5 6 7 VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 25. Output Capacitance Figure 26. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 0 100 TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 27. Input Voltage vs. Output Current http://onsemi.com 10 25 8 MUN2111T1 Series, SMUN2111T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2133T1 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 0.1 TA = -25C 0.01 0.001 50 Figure 30. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 31. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 29. DC Current Gain 8 0 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 32. Input Voltage versus Output Current http://onsemi.com 11 50 MUN2111T1 Series, SMUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2136T1 1000 75C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 0.01 75C 25C -25C 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 10 1 7 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage vs. Collector Current 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C TA = -25C 1 VO = 5 V 0.1 60 0 1 2 3 4 TA = -25C VO = 0.2 V 75C 0 2 6 7 8 9 Figure 36. Output Current vs. Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) 100 25C 75C 10 Figure 35. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 34. DC Current Gain 1.2 0 25C VCE = 10 V IC/IB = 10 0 TA = -25C 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 37. Input Voltage vs. Output Current http://onsemi.com 12 20 10 MUN2111T1 Series, SMUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2137T1 1000 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 75C 25C VCE = 10 V 10 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 38. Maximum Collector Voltage vs. Collector Current Figure 39. DC Current Gain 100 1.0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) TA = -25C 10 25C 1 0.1 0.01 0.001 60 75C VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 Figure 41. Output Current vs. Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 40. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 1.2 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 42. Input Voltage vs. Output Current http://onsemi.com 13 25 11 MUN2111T1 Series, SMUN2111T1 Series PACKAGE DIMENSIONS SC-59 CASE 318D-04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 E 1 DIM A A1 b c D E e L HE b e C A MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR L A1 MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 14 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUN2111T1/D