FAIRCHILD SEMICONDUCTOR | au pe syese74 ooa7asa o &f IRF330-333/IRF730-733 FAIRCHILD MTM/MTP5N35/5N40 FAIRCHILD 5 Neenlomberger company N-Channel Power MOSFETs, 5.5 A, 350 V/400 V Power And Discrete Division T-39-11 | | Description TO-204AA TO-220AB | I These devices are n-channel, enhancement made, power | | MOSFETs designed especially for high voltage, high speed 8S applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. @ Ves Rated at 20 V f S ' Silicon Gate for Fast Switching Speeds rs00020F s00010F i e toss: Vpson): SOA and Vasiin) Specified at Elevated IRF330 IRF730 emperature Rugged IRF331 IRF731 IRF332 IRF732 IRF333 IRF733 MTM5N35 MTPS5N35 Maximum Ratings MTM5N40 MTP5N40 Rating Rating IRF330/332 iIRF331/333 IRF730/732 IRF731/733 Symbol! Characteristic MTM/MTPSN40 MTM/MTP5N35 Unit Voss Drain to Source Voltage 400 350 v Voar Drain to Gate Voltage 400 350 Vv Res = 1.0 MQ Ves Gate to Source Voltage +20 +20 Vv Ta Tstg | Operating Junction and -55 to +150 -55 to +150 C t Storage Temperature | Th Maximum Lead Temperature 275 275 C for Soldering Purposes, 1/8 From Case for 5 s Maximum On-State Characteristics IRF330/331 IRF332/333 MTM5N35/40 IRF730/731 IRF732/733 MTP5N35/40 Ros (on) | Static Drain-to-Source 1.0 15 1.0 2 On Resistance Ip Drain Current A Continuous 5.5 4.6 5.0 Pulsed 22 22 22 Maximum Thermal Characteristics Raic Thermal Resistance, 1.67 1.67 1.67 C/W Junction to Case Pp Total Power Dissipation 75 75 75 Ww at To = 25C Notes For information concerning connection diagram and package outline, refer to Section 7. = 2-112aye Bf syece74 ooazaoo 2 IRF330-333/IRF730-733 FAIRCHILD SEMICONDUCTOR ae ena nae T-39-11 Electrical Characteristics (T; = 25C unless otherwise noted) i I i i ' i Max | Symbol Characteristic Min | Unit | Test Conditions Off Characteristics Vierypss | Drain Source Breakdown Voltage! Vv Vas =0 V, Ip = 250 vA IRF830/332/730/732 400 ' IRF331/333/731/733 350 Ibss Zero Gate Voltage Drain Current 250 uA Vps = Rated Voss, Veg = 0 V 1000 BA Vps = 0.8 x Rated Vpss, Vas =0 V, To = 125C less Gate-Body Leakage Current nA Ves = 20 V, Vps=0 V IRF330-333 +100 IRF730-733 +500 On Characteristics Vesithy Gate Threshold Voltage 2.0 4.0 Vv Ip = 250 wA, Vos = Vas Rosjon) | Static Drain-Source On-Resistance? 2 Ves =10 V, Ilp=3.0A IRF330/331/730/731 1.0 IRF332/333/732/733 1.5 Os Forward Transconductance 3.0 S (B) Vpg=10 V, Ip=3.0 A Dynamic Characteristics . Ciss Input Capacitance 900 pF Vos = 25 V, Veg =0 V Coss Output Capacitance 300 pF f= 1.0 MHz Ciss Reverse Transfer Capacitance 80 pF Switching Characteristics (To = 25C, Figures 12, 13) tacon) Turn-On Delay Time 30 ns Vpp = 175 V, Ip=3.0 A t- Rise Time 35 ns nos - Raen = 15 & taroth Turn-Off Delay Time 55 ns t Fall Time 35 ns Qg Total Gate Charge 30 nc Veg = 10 V, Ip=7.0 A Vpp = 180 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF330/331 /730/731 1.6 Vv Is =5.5 A; Vag =0 V IRF332/333/732/733 1.5 Vv Is = 4.5 A; Veg =0 V ter Reverse Recovery Time 400 ns Ig = 5.5 A; dig/dt = 100 A/pS 2-113 inc - wore oe ee ee FAIRCHILD SEMICONDUCTOR 84 DEM 3469674 0027901 4 I. . MTM/MTP5N35/5N40 ret 7-39-11 Electrical Characteristics (To = 25C unless otherwise noted) : Symbol! Characteristic | Min | Max Unit Test Conditions i Off Characteristics k Viarypss | Drain Source Breakdown Voltage! Vv Veg =0 V, Ip =5.0 mA | MTM/MTPSN40 400 MTM/MTP5N35 350 Ipss Zero Gate Voltage Drain Current 0.25 mA Vps = 0.85 x Rated Voss, i Vag =0 V | 2.5 mA Vps = 0.85 x Rated Voss, : Vag =0 V, Te = 100C : lass Gate-Body Leakage Current +500 nA Veg = 20 V, Vos =0 V - : On Characteristics F - Vasun) Gate Threshold Voltage 2.0 4.5 Vv Ip = 1.0 mA, Vos = Vas 1.5 4.0 Vv Ip = 1.0 mA, Vps = Vas To = 100C Rosiony | Static Drain-Source On-Resistance* 1.0 2 Vag =10 V, ip=25A Vos(on) | Drain-Source On-Voltage 25 v Veg =10 V; Ip=25 A 6.2 Vv Ves =10 V, Ip=5.0 A 5.0 Vv Veg =10 V, Ip=2.5 A To = 100C ts Forward Transconductance 2.0 S @&) Vpg = 10 V, Ip=2.5 A i Dynamic Characteristics Ciss Input Capacitance 1200 pF Vps = 25 V, Vag =0 V Coss Output Capacitance 300 pF f= 1.0 MHz Crss Reverse Transfer Capacitance 80 pF Switching Characteristics (Tc = 25C, Figures 12, 13)3 : tayon) Turn-On Delay Time 50 ns Vop = 25 V, lp=2.5 A , Veg = 10 V, Roen = 50 2 t Rise Time 400 ns Res = 50 2 taoth Turn-Off Delay Time 200 ns . t Fall Time 100 ns : Qg Total Gate Charge 30 nc Veg = 10 V, Ip=7.0 A i Vpp = 180 V ' Notes 4. Ty= 428C to + 150C 2. Pulse test: Pulse width <0 ps, Duty cycle < 1% 3. Switching time measurements performed on LEM TR-58 test equipment. 2-114tL eee FAIRCHILD SEMICONDUCTOR oe au pe fsuesu7y ooezs0e , Bf IRF330-333/IRF730-733 MTM/MTP5N35/5N40 T-39-11 Typical Performance Curves Figure 1 Output Characteristics ? 10 TON 6 ipDRAIN CURRENTA Q 2 4 8 8 10 Vos DRAIN TO SOURCE VOLTAGEV PCLOsZ0F Figure 3 Transfer Characteristics Lona enya 0 Vos = 10V Ip>DRAIN CURRENTA Ty = 25C o o 1 2 3 4 7 VasGATE TO SOURCE VOLTAGEV PCIOS4OF Figure 5 Static Drain to Source On-Resistance vs Drain Current Rosjon) STATIC DRAIN TO SOURCE ON RESISTANCE? Figures 4-6 for IRF332/333/732/733 only. Figure 2 Static Drain to Source Resistance i vs Drain Current 1 I Ros(on)~STATIC DRAIN TO SOURCE RESISTANCE 0 2 4 6 & 10 Ip DRAIN CURRENTA Presser Figure 4 Output Characteristics . 7 6 lp DRAIN CURRENTA v v 0 4 a 2 16 a Vps DRAIN TO SOURCE VOLTAGEV POIOSser Figure 6 Transfer Characteristics 8 Vos = 10 lo DRAIN CURRENTA - 2 4 6 8 10 1 a 2 4 6 6 7? 8 foDRAIN CURRENTA Vag GATE TO SOURCE VOLTAGEV PCIOSEOF POIOS7OF _neeemennes a even 2-115FAIRC HILD SEMICONDUCTOR 6&4 De Bp s4ean74 oOe7503 4 i IRF330-333/IRF730-733 MTM/MTP5N35/5N40 T-39-11 Typical Performance Curves (Cont.) Figure 7 Temperature Variation of Gate to Source Threshold Voltage 13 Figure 8 Capacitance vs Drain to Source Voltage 1000 uw Vas =0V g 12 t=1.0MHz 5 W=25C 800 > 2 14 & 3 a 1.0 g 600 & < = 3 w # 0.9 = 3 8 Aa 8 os o Z 200 2 Cosa z Cres o $0 6 50 100 150 0 10 20 20 40 50 Cy Ty-JUNCTION TEMPERATUREC Vps~ DRAIN TO SQUACE VOLTAGE~V POOF PC10S80F Figure 9 Gate to Source Voltage vs Total Gate Charge Figure 10 Forward Biased Safe Operating Area 101 = ss 7 5 Q < 5 d 5 a a a THIS AREA . 2 BE 5 3B 10 i 8 Zz eg = g a6 ' z i f 1 # Te = ; s Tr< 150C > 2 F SINGLE PULSE sm om CURRENT LIMITED 10-1 oe 8 16 24 32 40 101 2 5 102 2 6 103 Gy TOTAL GATE CHARGEnt VosDRAIN TO SOURCE VOLTAGEV PCIO5S0r PC11S8OF Figure 11 Transient Thermal Resistance it = 10! ey { wi Zz a b a c a = 10 a" E e & a a z= < 1 Oo i g 10-5 t 10-4 10 101 107 105 10 . t-TMEms PCIOOIOF 2-116 7 7q boy |FAIRCHILD SEMICONDUCTOR ay pe syese7y ooz7ao4 o IRF330-333/IRF730-733 MTM/MTP5N35/5N40 7-39-11 Typical Electrical Characteristics Figure 12 Switching Test Circuit vin PULSE GENERATOR Yoo RL Vout 1 o cROMEOF Figure 13 Switching Waveforms taow | l . OUTPUT, Vout INVERTED | 50% 50% INPUT, Vin 2-117