Ayg BeSonic TYN 0510 ---> TYN 1010 SCR FEATURES a HIGH SURGE CAPABILITY a HIGH ON-STATE CURRENT a HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Con- trolled Rectifiers uses a high performance glass passi- vated technology. This general purpose Family of Silicon Controlled we . : . TO220AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Te = 100C 10 A (180 conduction angle) IT(AV) Average on-state current Te = 100C 6.4 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 105 A ( Tj initial = 25C ) tp = 10 ms 100 2t 2t value tp = 10 ms 50 A2s dl/dt Critical rate of rise of on-state current 50 A/us Gate supply: IG =100mA dig/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to+ 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 C from case Symbol Parameter TYN Unit 0510 | 110 210 410 610 810 | 1010 VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 | 1000 Vv VRRM Tj = 125C 1/4 March 1995TYN 0510 ---> TYN 1010 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) |Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC 2.5 C/W GATE CHARACTERISTICS (maximum values) Pg (AV) = 1W) Pg@m = 10W (tp=20 us) IFGm=4A (tp=20ns) VRGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V) (DC) RL=33Q Tj=25C MAX 15 mA VGT Vp=12V (DC) RL=33Q Tj=25C MAX 1.5 Vv V@D VD=VDRM RL=3.3kQ Tj= 110C MIN 0.2 Vv tgt VD=VDRM_ Iq = 40mA Tj=25C TYP 2 us dig/dt = 0.5A/us IL Ig= 1.2 IaqT Tj=25C TYP 50 mA IH IT=100mA _ gate open Tj=25C MAX 30 mA VIM ITM= 20A_ tp= 380us Tj=25C MAX 1.6 Vv IDRM VpRM_ Rated Tj=25C MAX 0.01 mA IRRM VRRM_ Rated T= 110C 5 dvV/at Linear slope up to VD=67%VDRM Tj= 110C MIN 200 V/us gate open tq VD=67%VDRM ITM=20A_ VR= 25V Tj= 110C TYP 70 us dityy/dt=30 Aus - dVp/dt= 50V/us 2/4 MIGROS. BETTYN 0510 ---> TYN 1010 Fig.1 : Maximum average power dissipation versus average on-state current. P (W) 12 1 360 10 4 a L Wn F DC KO = 180 6 x Xe a Of O = 120 4 ~ C = 90 9 OY = 60 Cd = 30 avy) 0 l l l 1 0 1 2 3 4 5 6 7 8 9 Fig.3 Average on-state current temperature. versuS Case ITcavyfA) 2 10 \ , \ Tcase C) 0 1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current versus junction temperature. IgtITil IgtlTi=25 C] -IhTi] In[Ti=25 GC] 2.6 ol \ t Ig mo N 1.6 _| rm 0.5 I Tj (C) 0 1 1 1 -40-30-20-10 6 10 20 30 40 50 BO TO 80 90 100110 ky7_ SGS:THOMSON we sais ll Ah: Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (W) Tease (C) 12 Rth = oC/W 2C/iw 10 Lo, 2>cywip1a0 Vj 6C/W 8 ~ y +105 6 AY L110 4 a= pee \ x \ L115 2 \\ L120 Tamb (C) 1 L125 0 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. 120 TTTTTT TTT Tj initial = 25C 100 80 > 40 | 20 ee] Number of cycles 0 | | ttt iti | 1 19 100 1909 3/4TYN 0510 ---> TYN 1010 Fig.7 : Non repetitive surge peak on-state current for a Fig.8 : On-state characteristics (maximum values). sinusoidal pulse with width : t < 10 ms, and corresponding value of |2t. Item (A). It (As) Ity tA) 1000 Tj initial = 25C Tj initial 25C 100 100 Tj max Tj max 10 Vito = 0.9V Rt -0.035 0 10 ' Vimty) o 1 2 3 4 5 PACKAGE MECHANICAL DATA TO220AB Plastic REF. DIMENSIONS Millimeters Inches A 4 Min. | Max. | Min. | Max. | G yt A 10.00 | 10.40 | 0.393 | 0.409 y | B__| 15.20 | 15.90 | 0.598 | 0.625 pa an 9 D7 D TT C 13.00 | 14.00 | 0.511 | 0.551 B D 6.20 | 6.60 | 0.244 | 0.259 F 3.50 | 4.20 | 0.137 | 0.165 oO _ G 2.65 | 2.95 | 0.104 | 0.116 HEL IF H_| 4.40 | 4.60 | 0.173 | 0.181 p [9 oft l 3.75 | 3.85 | 0.147 | 0.151 J 1.23 | 1.32 | 0.048 | 0.051 M L 0.49 | 0.70 | 0.019 | 0.027 Ne M 2.40 | 2.72 | 0.094 | 0.107 N 4.80 | 5.40 | 0.188 | 0.212 0 1.14 1.70 | 0.044 | 0.066 P 0.61 0.88 | 0.024 | 0.034 Cooling method :C Recommended torque value : 0.8 m.N. Marking : type number Maximum torque value : 1 m.N. Weight : 2.3 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 . MNEREEL SCTE