S-8211D Series
www.sii-ic.com
BATTERY PROTECTION IC
FOR 1-CELL PACK
© Seiko Instruments Inc., 2005-2012 Rev.6.3_00
Seiko Instruments Inc. 1
The S-8211D Series is a protection IC for 1-cell lithium-ion / lithium-polymer rechargeable battery and includes high-accuracy
voltage detection circuits and delay circuits.
The S-8211D Series is suitable for protecting 1-cell rechargeable lithium-ion / lithium-polymer battery packs from overcharge,
overdischarge, and overcurrent.
Features
• High-accuracy voltage detection circuit
Overcharge detection voltage 3.6 V to 4.5 V (5 mV step) Accuracy ±25 mV (Ta = +25°C)
Accuracy ±30 mV (Ta = −5°C to +55°C)
Overcharge release voltage 3.5 V to 4.4 V*1 Accuracy ±50 mV
Overdischarge detection voltage 2.0 V to 3.0 V (10 mV step) Accuracy ±50 mV
Overdischarge release voltage 2.0 V to 3.4 V*2 Accuracy ±100 mV
Discharge overcurrent detection voltage 0.05 V to 0.30 V (10 mV step) Accuracy ±15 mV
Load short-circuiting detection voltage 0.5 V (fixed) Accuracy ±200 mV
• Detection delay times are generated only by an internal circuit (external capacitors are unnecessary).
Accuracy ±20%
• High-withstand voltage device is used for charger connection pins
(VM pin and CO pin: Absolute maximum rating = 28 V)
• 0 V battery charge function "available" / "unavailable" is selectable.
• Power-down function "available" / "unavailable" is selectable.
• Wide operation temperature range Ta = −40°C to +85°C
• Low current consumption
During operation 3.0 μA typ., 5.5 μA max. (Ta = +25°C)
During power-down 0.2 μA max. (Ta = +25°C)
• Lead-free, Sn 100%, halogen-free*3
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)
*3. Refer to " Product Name Structure" for details.
Applications
• Lithium-ion rechargeable battery pack
• Lithium-polymer rechargeable battery pack
Packages
• SOT-23-5
• SNT-6A
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
2
Block Diagram
−
+
−
+
VM
VSS
VDD
CO
DO
−
+
−
+
R
VMD
R
VMS
Load short-circuiting detection
comparator
Discharge overcurrent detection
comparator
Charger detection circuit
0 V battery charge /
charge inhibition circuit
Divider control
circuit
Output control circuit
Oscillator control
circuit
Overdischarge
detection
comparator
Overcharge
detection
comparator
Remark All diodes shown in figure are parasitic diodes.
Figure 1
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 3
Product Name Structure
1. Product name
1. 1 SOT-23-5
S-8211D xx - M5T1 x
Serial code
*2
Sequentially set from AA to ZZ
Package name (abbreviation) and IC packing specifications
*1
M5T1: SOT-23-5, Tape
Environmental code
U: Lead-free (Sn 100%), halogen-free
S: Lead-free, halogen-free
G: Lead-free (for details, please contact our sales office)
*1. Refer to the tape drawing.
*2. Refer to the "3. Product name list".
1. 2 SNT-6A
S-8211D xx - I6T1 x
Serial code
*2
Sequentially set from AA to ZZ
Package name (abbreviation) and IC packing specifications
*1
I6T1: SNT-6A, Tape
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)
*1. Refer to the tape drawing.
*2. Refer to the "3. Product name list".
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
4
2. Packages
Table 1 Package Drawing Codes
Package Name Dimension Tape Reel Land
SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD −
SNT-6A PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD
3. Product name list
3. 1 SOT-23-5
Table 2
Product Name
Over-
charge
Detection
Voltage
[VCU]
Over-
charge
Release
Voltage
[VCL]
Over-
discharge
Detection
Voltage
[VDL]
Over-
discharge
Release
Voltage
[VDU]
Discharge
Overcurrent
Detection
Voltage
[VDIOV]
0 V Battery
Charge
Function
Delay Time
Combination*1
Power-down
Function
S-8211DAD-M5T1x 4.280 V 4.180 V 2.50 V 2.80 V 0.19 V Unavailable (1) Available
S-8211DAE-M5T1x 4.280 V 4.180 V 2.50 V 2.70 V 0.19 V Unavailable (1) Available
S-8211DAH-M5T1x 4.275 V 4.175 V 2.30 V 2.40 V 0.10 V Available (1) Available
S-8211DAI-M5T1x 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Unavailable (1) Available
S-8211DAJ-M5T1x 4.280 V 4.080 V 3.00 V 3.00 V 0.08 V Available (1) Available
S-8211DAK-M5T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.13 V Unavailable (1) Available
S-8211DAL-M5T1x 4.280 V 4.080 V 2.80 V 2.80 V 0.10 V Available (1) Available
S-8211DAM-M5T1x 4.275 V 4.075 V 2.50 V 2.90 V 0.15 V Unavailable (1) Available
S-8211DAR-M5T1x 3.600 V 3.600 V 2.00 V 2.30 V 0.15 V Available (1) Available
S-8211DAS-M5T1x 3.600 V 3.500 V 2.50 V 2.80 V 0.10 V Available (1) Available
S-8211DAU-M5T1y 3.650 V 3.550 V 2.50 V 2.80 V 0.15 V Available (1) Available
S-8211DAV-M5T1y 3.700 V 3.600 V 2.50 V 2.80 V 0.05 V Available (1) Available
S-8211DAW-M5T1y 3.800 V 3.700 V 2.50 V 2.80 V 0.10 V Available (1) Available
*1. Refer to Table 4 about the details of the delay time combinations (1).
Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above.
2. x: G or U
y: S or U
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 5
3. 2 SNT-6A
Table 3
Product Name
Over-
charge
Detection
Voltage
[VCU]
Over-
charge
Release
Voltage
[VCL]
Over-
discharge
Detection
Voltage
[VDL]
Over-
discharge
Release
Voltage
[VDU]
Discharge
Overcurrent
Detection
Voltage
[VDIOV]
0 V Battery
Charge
Function
Delay Time
Combination*1
Power-down
Function
S-8211DAD-I6T1x 4.280 V 4.180 V 2.50 V 2.80 V 0.19 V Unavailable (1) Available
S-8211DAE-I6T1x 4.280 V 4.180 V 2.50 V 2.70 V 0.19 V Unavailable (1) Available
S-8211DAF-I6T1x 4.250 V 4.050 V 2.40 V 2.90 V 0.10 V Available (2) Unavailable
S-8211DAG-I6T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.08 V Available (1) Unavailable
S-8211DAI-I6T1x 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Unavailable (1) Available
S-8211DAN-I6T1x 4.280 V 4.080 V 2.30 V 3.00 V 0.10 V Unavailable (3) Available
S-8211DAQ-I6T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V Unavailable (3) Available
S-8211DAT-I6T1x 4.280 V 4.080 V 2.70 V 2.70 V 0.08 V Unavailable (3) Available
S-8211DAX-I6T1x 4.280 V 4.080 V 2.00 V 2.00 V 0.11 V Unavailable (3) Available
S-8211DAY-I6T1x 3.900 V 3.900 V 2.00 V 2.30 V 0.15 V Available (1) Available
S-8211DAZ-I6T1x 3.800 V 3.500 V 2.40 V 2.70 V 0.07 V Available (1) Available
*1. Refer to Table 4 about the details of the delay time combinations (1) to (3).
Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above.
2. x: G or U
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
Table 4
Delay Time
Combination
Overcharge Detection
Delay Time
[tCU]
Overdischarge Detection
Delay Time
[tDL]
Discharge Overcurrent
Detection Delay Time
[tDIOV]
Load Short-circuiting
Detection Delay Time
[tSHORT]
(1) 1.2 s 150 ms 9 ms 300 μs
(2) 1.2 s 75 ms 9 ms 300 μs
(3) 1.2 s 150 ms 18 ms 300 μs
Remark The delay times can be changed within the range listed Table 5. For details, please contact our sales office.
Table 5
Delay Time Symbol Selection Range Remark
Overcharge detection delay time tCU 143 ms 573 ms 1.2 s*1 Select a value from the left.
Overdischarge detection delay time tDL 38 ms
150 ms*1 300 ms Select a value from the left.
Discharge overcurrent detection delay time tDIOV 4.5 ms
9 ms*1 18 ms Select a value from the left.
Load short-circuiting detection delay time tSHORT − 300 μs*1 560 μs Select a value from the left.
*1. The value is the delay time of the standard products.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
6
Pin Configurations
1. SOT-23-5
Table 6
Pin No. Symbol Description
1 VM Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin)
2 VDD Input pin for positive power supply
3 VSS Input pin for negative power supply
4 DO Connection pin of discharge control FET gate
(CMOS output)
5 CO Connection pin of charge control FET gate
(CMOS output)
132
45
Top view
Figure 2
2. SNT-6A
Table 7
Pin No. Symbol Description
1
NC*1 No connection
2 CO
Connection pin of charge control FET gate
(CMOS output)
3 DO
Connection pin of discharge control FET gate
(CMOS output)
5
4
6
2
3
1
Top view
4 VSS Input pin for negative power supply
Figure 3 5 VDD Input pin for positive power supply
6 VM
Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin)
*1. The NC pin is electrically open.
The NC pin can be connected to the VDD pin or the VSS pin.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 7
Absolute Maximum Ratings
Table 8
(Ta = +25°C unless otherwise specified)
Item Symbol Applied Pin Absolute Maximum Rating Unit
Input voltage between VDD pin and
VSS pin VDS VDD
VSS − 0.3 to VSS + 12 V
VM pin input voltage VVM VM VDD − 28 to VDD + 0.3 V
DO pin output voltage VDO DO VSS − 0.3 to VDD + 0.3 V
CO pin output voltage VCO CO VVM − 0.3 to VDD + 0.3 V
− 250 (When not mounted on board) mW
SOT-23-5 − 600*1 mW
Power dissipation
SNT-6A
PD
− 400*1 mW
Operation ambient temperature Topr − −40 to +85 °C
Storage temperature Tstg − −55 to +125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
050 100 150
700
400
0
Power Dissipation (PD) [mW]
Ambient Temperature (Ta) [°C]
200
600
500
300
100
SNT-6A
SOT-23-5
Figure 4 Power Dissipation of Package (When Mounted on Board)
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
8
Electrical Characteristics
1. Except detection delay time (Ta = +25°C)
Table 9 (Ta = +25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Condi-
tion
Test
Circuit
DETECTION VOLTAGE
3.60 V to 4.50 V, adjustable VCU −
0.025
VCU
VCU +
0.025 V 1 1
Overcharge detection voltage VCU 3.60 V to 4.50 V, adjustable,
Ta = −5°C to +55°C*1
VCU −
0.03
VCU
VCU +
0.03 V 1 1
VCL ≠ VCU VCL −
0.05
VCL VCL +
0.05 V 1 1
Overcharge release voltage VCL 3.50 V to 4.40 V,
adjustable VCL = VCU VCL −
0.05 VCL VCL +
0.025 V 1 1
Overdischarge detection voltage VDL 2.00 V to 3.00 V, adjustable VDL −
0.05 VDL VDL+
0.05 V 2 2
VDU ≠ VDL VDU −
0.10 VDU VDU +
0.10 V 2 2
Overdischarge release voltage VDU 2.00 V to 3.40 V,
Adjustable VDU = VDL VDU −
0.05 VDU VDU +
0.05 V 2 2
Discharge overcurrent detection voltage
VDIOV 0.05 V to 0.30 V, adjustable VDIOV −
0.015 VDIOV VDIOV +
0.015 V 3 2
Load short-circuiting detection voltage
*2
VSHORT − 0.30 0.50 0.70 V 3 2
Charger detection voltage VCHA − −1.0 −0.7 −0.4 V 4 2
0 V BATTERY CHARGE FUNCTION
0 V battery charge starting charger voltage
V0CHA
0 V battery charge function "available"
1.2 − − V 10 2
0 V battery charge inhibition battery voltage
V0INH
0 V battery charge function "unavailable"
− − 0.5 V 11 2
INTERNAL RESISTANCE
Resistance between VM pin and VDD pin
RVMD V
DD = 1.8 V, VVM = 0 V 100 300 900 kΩ 5 3
Resistance between VM pin and VSS pin
RVMS V
DD = 3.5 V, VVM = 1.0 V 10 20 40 kΩ 5 3
INPUT VOLTAGE
Operation voltage between VDD pin and VSS pin
VDSOP1 − 1.5 − 8 V − −
Operation voltage between VDD pin and VM pin
VDSOP2 − 1.5 − 28 V − −
INPUT CURRENT (WITH POWER-DOWN FUNTION)
Current consumption during operation IOPE V
DD = 3.5 V, VVM = 0 V 1.0 3.0 5.5 μA 4 2
Current consumption during power-down
IPDN V
DD = VVM = 1.5 V − − 0.2 μA 4 2
INPUT CURRENT (WITHOUT POWER-DOWN FUNTION)
Current consumption during operation IOPE V
DD = 3.5 V, VVM = 0 V 1.0 3.0 5.5 μA 4 2
Current consumption during overdischarge
IOPED V
DD = VVM = 1.5 V 0.3 2.0 3.5 μA 4 2
OUTPUT RESISTANCE
CO pin resistance "H" RCOH
V
CO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V
2.5 5 10 kΩ 6 4
CO pin resistance "L" RCOL
V
CO
= 0.5 V, V
DD
= 4.5 V, V
VM
= 0 V
2.5 5 10 kΩ 6 4
DO pin resistance "H" RDOH
V
DO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V
2.5 5 10 kΩ 7 4
DO pin resistance "L" RDOL V
DO = 0.5 V, VDD = VVM = 1.8 V 2.5 5 10 kΩ 7 4
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
*2. In any conditions, load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage
(VDIOV).
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 9
2. Except detection delay time (Ta = −40°C to +85°C*1)
Table 10 (Ta = −40°C to +85°C*1 unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Condi-
tion
Test
Circuit
DETECTION VOLTAGE
Overcharge detection voltage VCU 3.60 V to 4.50 V, adjustable VCU −
0.060 VCU VCU +
0.040 V 1 1
VCL ≠ VCU VCL −
0.08 VCL VCL +
0.065 V 1 1
Overcharge release voltage VCL 3.50 V to 4.40 V,
adjustable VCL = VCU VCL −
0.08 VCL VCL +
0.04 V 1 1
Overdischarge detection voltage VDL 2.00 V to 3.00 V, adjustable VDL −
0.11 VDL VDL +
0.13 V 2 2
VDU ≠ VDL VDU −
0.15 VDU VDU +
0.19 V 2 2
Overdischarge release voltage VDU 2.00 V to 3.40 V,
adjustable VDU = VDL VDU −
0.11 VDU VDU +
0.13 V 2 2
Discharge overcurrent detection
voltage VDIOV 0.05 V to 0.30 V, adjustable VDIOV −
0.021 VDIOV VDIOV +
0.024 V 3 2
Load short-circuiting detection voltage
*2
VSHORT − 0.16 0.50 0.84 V 3 2
Charger detection voltage VCHA − −1.2 −0.7 −0.2 V 4 2
0 V BATTERY CHARGE FUNCTION
0 V battery charge starting charger voltage
V0CHA
0 V battery charge function "available"
1.7 − − V 10 2
0 V battery charge inhibition battery voltage
V0INH
0 V battery charge function "unavailable"
− − 0.3 V 11 2
INTERNAL RESISTANCE
Resistance between VM pin and VDD pin
RVMD V
DD = 1.8 V, VVM = 0 V 78 300 1310 kΩ 5 3
Resistance between VM pin and VSS pin
RVMS V
DD = 3.5 V, VVM = 1.0 V 7.2 20 44 kΩ 5 3
INPUT VOLTAGE
Operation voltage between VDD pin and VSS pin
VDSOP1 − 1.5 − 8 V − −
Operation voltage between VDD pin and VM pin
VDSOP2 − 1.5 − 28 V − −
INPUT CURRENT (WITH POWER-DOWN FUNTION)
Current consumption during operation IOPE V
DD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 μA 4 2
Current consumption during power-down
IPDN V
DD = VVM = 1.5 V − − 0.3 μA 4 2
INPUT CURRENT (WITHOUT POWER-DOWN FUNTION)
Current consumption during operation IOPE V
DD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 μA 4 2
Current consumption during overdischarge
IOPED V
DD = VVM = 1.5 V 0.2 2.0 3.8 μA 4 2
OUTPUT RESISTANCE
CO pin resistance "H" RCOH
V
CO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V
1.2 5 15 kΩ 6 4
CO pin resistance "L" RCOL
V
CO
= 0.5 V, V
DD
= 4.5 V, V
VM
= 0 V
1.2 5 15 kΩ 6 4
DO pin resistance "H" RDOH
V
DO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V
1.2 5 15 kΩ 7 4
DO pin resistance "L" RDOL V
DO = 0.5 V, VDD = VVM = 1.8 V 1.2 5 15 kΩ 7 4
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
*2. In any conditions, load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage
(VDIOV).
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
10
3. Detection delay time
3. 1 S-8211DAD, S-8211DAE, S-8211DAG, S-8211DAH, S-8211DAI, S-8211DAJ, S-8211DAK, S-8211DAL,
S-8211DAM, S-8211DAR, S-8211DAS, S-8211DAU, S-8211DAV, S-8211DAW, S-8211DAY, S-8211DAZ
Table 11
Item Symbol Condition Min. Typ. Max. Unit
Test
Condi-
tion
Test
Circuit
DELAY TIME (Ta = +25°C)
Overcharge detection delay time tCU − 0.96 1.2 1.4 s 8 5
Overdischarge detection delay time tDL − 120 150 180 ms 8 5
Discharge overcurrent detection delay time tDIOV − 7.2 9 11 ms 9 5
Load short-circuiting detection delay time tSHORT − 240 300 360 μs 9 5
DELAY TIME (Ta = −40°C to +85°C)*1
Overcharge detection delay time tCU − 0.7 1.2 2.0 s 8 5
Overdischarge detection delay time tDL − 83 150 255 ms 8 5
Discharge overcurrent detection delay time tDIOV − 5 9 15
ms 9 5
Load short-circuiting detection delay time tSHORT − 150 300 540 μs 9 5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is
guaranteed by design, not tested in production.
3. 2 S-8211DAF
Table 12
Item Symbol Condition Min. Typ. Max. Unit
Test
Condi-
tion
Test
Circuit
DELAY TIME (Ta = +25°C)
Overcharge detection delay time tCU − 0.96 1.2 1.4 s 8 5
Overdischarge detection delay time tDL − 61 75 90
ms 8 5
Discharge overcurrent detection delay time tDIOV − 7.2 9 11
ms 9 5
Load short-circuiting detection delay time tSHORT − 240 300 360
μs 9 5
DELAY TIME (Ta = −40°C to +85°C)*1
Overcharge detection delay time tCU − 0.7 1.2 2.0 s 8 5
Overdischarge detection delay time tDL − 41 75 128
ms 8 5
Discharge overcurrent detection delay time tDIOV − 5 9 15
ms 9 5
Load short-circuiting detection delay time tSHORT − 150 300 540
μs 9 5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is
guaranteed by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 11
3. 3 S-8211DAN, S-8211DAQ, S-8211DAT, S-8211DAX
Table 13
Item Symbol Condition Min. Typ. Max. Unit
Test
Condi-
tion
Test
Circuit
DELAY TIME (Ta = +25°C)
Overcharge detection delay time tCU − 0.96 1.2 1.4 s 8 5
Overdischarge detection delay time tDL − 120 150 180 ms 8 5
Discharge overcurrent detection delay time tDIOV − 14.5 18 22 ms 9 5
Load short-circuiting detection delay time tSHORT − 240 300 360 μs 9 5
DELAY TIME (Ta = −40°C to +85°C)*1
Overcharge detection delay time tCU − 0.7 1.2 2.0 s 8 5
Overdischarge detection delay time tDL − 83 150 255 ms 8 5
Discharge overcurrent detection delay time tDIOV − 10 18 30
ms 9 5
Load short-circuiting detection delay time tSHORT − 150 300 540 μs 9 5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is
guaranteed by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
12
Test Circuits
Caution Unless otherwise specified, the output voltage levels "H" and "L" at the CO pin (VCO) and the DO pin
(VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with
respect to VVM and the DO pin level with respect to VSS.
1. Overcharge detection voltage, overcharge release voltage
(Test condition 1, test circuit 1)
Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and the VSS pin at which VCO goes
from "H" to "L" when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. Overcharge
release voltage (VCL) is defined as the voltage between the VDD pin and the VSS pin at which VCO goes from "L" to
"H" when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined as the difference
between overcharge detection voltage (VCU) and overcharge release voltage (VCL).
2. Overdischarge detection voltage, overdischarge release voltage
(Test condition 2, test circuit 2)
Overdischarge detection voltage (VDL) is defined as the voltage between the VDD pin and the VSS pin at which VDO
goes from "H" to "L" when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V, V2 = 0 V.
Overdischarge release voltage (VDU) is defined as the voltage between the VDD pin and the VSS pin at which VDO
goes from "L" to "H" when the voltage V1 is then gradually increased. Overdischarge hysteresis voltage (VHD) is
defined as the difference between overdischarge release voltage (VDU) and overdischarge detection voltage (VDL).
3. Discharge overcurrent detection voltage
(Test condition 3, test circuit 2)
Discharge overcurrent detection voltage (VDIOV) is defined as the voltage between the VM pin and the VSS pin whose
delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of discharge
overcurrent delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V,
V2 = 0 V.
4. Load short-circuiting detection voltage
(Test condition 3, test circuit 2)
Load short-circuiting detection voltage (VSHORT) is defined as the voltage between the VM pin and the VSS pin whose
delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of load short-circuiting
delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V, V2 = 0 V.
5. Current consumption during operation
(Test condition 4, test circuit 2)
The current consumption during operation (IOPE) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = 3.5 V and V2 = 0 V (normal status).
6. Charger detection voltage (= abnormal charge current detection voltage)
(Test condition 4, test circuit 2)
The charger detection voltage (VCHA) is the voltage between the VM pin and the VSS pin; when gradually increasing
V1 at V1 = 1.8 V, V2 = 0 V to set V1 = VDL + (VHD/2), after that, decreasing V2 gradually from 0 V so that VDO goes "L"
to "H".
Measurement of the charger detection voltage is available for the product with overdischarge hysteresis VHD ≠ 0 only.
The abnormal charge current detection voltage is the voltage between the VM pin and the VSS pin; when gradually
decreasing V2 at V1 = 3.5 V, V2 = 0 V and VCO goes "H" to "L".
The value of the abnormal charge current detection voltage is equal to the charger detection voltage (VCHA).
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 13
7. Current consumption during power-down, current consumption during overdischarge
(Test condition 4, test circuit 2)
7. 1 With power-down function
The current consumption during power-down (IPDN) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = V2 = 1.5 V (overdischarge status).
7. 2 Without power-down function
The current consumption during overdischarge (IOPED) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = V2 = 1.5 V (overdischarge status).
8. Resistance between VM pin and VDD pin
(Test condition 5, test circuit 3)
The resistance between the VM pin and the VDD pin (RVMD) is the resistance between the VM pin and the VDD pin
under the set conditions of V1 = 1.8 V, V2 = 0 V.
9. Resistance between VM pin and VSS pin
(Test condition 5, test circuit 3)
The resistance between the VM pin and the VSS pin (RVMS) is the resistance between the VM pin and the VSS pin
under the set conditions of V1 = 3.5 V, V2 = 1.0 V.
10. CO pin resistance "H"
(Test condition 6, test circuit 4)
The CO pin resistance "H" (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V3 = 3.0 V.
11. CO pin resistance "L"
(Test condition 6, test circuit 4)
The CO pin resistance "L" (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 = 0 V, V3 = 0.5 V.
12. DO pin resistance "H"
(Test condition 7, test circuit 4)
The DO pin resistance "H" (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V4 = 3.0 V.
13. DO pin resistance "L"
(Test condition 7, test circuit 4)
The DO pin resistance "L" (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 = 0.5 V.
14. Overcharge detection delay time
(Test condition 8, test circuit 5)
The overcharge detection delay time (tCU) is the time needed for VCO to change from "H" to "L" just after the voltage V1
momentarily increases (within 10 μs) from overcharge detection voltage (VCU) − 0.2 V to overcharge detection voltage
(VCU) + 0.2 V under the set conditions of V2 = 0 V.
15. Overdischarge detection delay tme
(Test condition 8, test circuit 5)
The overdischarge detection delay time (tDL) is the time needed for VDO to change from "H" to "L" just after the voltage
V1 momentarily decreases (within 10 μs) from overdischarge detection voltage (VDL) + 0.2 V to overdischarge
detection voltage (VDL) − 0.2 V under the set condition of V2 = 0 V.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
14
16. Discharge overcurrent detection delay time
(Test condition 9, test circuit 5)
Discharge overcurrent detection delay time (tDIOV) is the time needed for VDO to go to "L" after the voltage V2
momentarily increases (within 10 μs) from 0 V to 0.35 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
17. Load short-circuiting detection delay time
(Test condition 9, test circuit 5)
Load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go to "L" after the voltage V2
momentarily increases (within 10 μs) from 0 V to 1.6 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
18. 0 V battery charge starting charger voltage (0 V battery charge function "available")
(Test condition 10, test circuit 2)
The 0 V charge starting charger voltage (V0CHA) is defined as the voltage between the VDD pin and the VM pin at
which VCO goes to "H" (VVM + 0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition
of V1 = V2 = 0 V.
19. 0 V battery charge inhibition battery voltage (0 V battery charge function "unavailable")
(Test condition 11, test circuit 2)
The 0 V charge inhibition charger voltage (V0INH) is defined as the voltage between the VDD pin and the VSS pin at
which VCO goes to "H" (VVM + 0.1 V or higher) when the voltage V1 is gradually increased from the starting condition
of V1 = 0 V, V2 = −4 V.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 15
V VDO V VCO
CO
DO
VSS
VDD
VM
S-8211D Series
R1 =
220 Ω
V1
COM
VV
DO
V V
CO
CO
DO
VSS
VDD
VM
S-8211D Series
V1
V2
COM
A
I
DD
Figure 5 Test Circuit 1 Figure 6 Test Circuit 2
CO DO
VSS
VDD
VM
S-8211D Series
V1
V2
COM
A
IDD
AIVM
AIDO A ICO
CO
DO
VSS
VDD
VM
S-8211D Series
V1
V2
COM
V4 V3
Figure 7 Test Circuit 3 Figure 8 Test Circuit 4
CO DO
VSS
VDD
VM
S-8211D Series
V1
V2
COM
Oscilloscope Oscilloscope
Figure 9 Test Circuit 5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
16
Operation
Remark Refer to the " Battery Protection IC Connection Example".
1. Normal status
The S-8211D Series monitors the voltage of the battery connected between the VDD pin and the VSS pin and the
voltage difference between the VM pin and the VSS pin to control charging and discharging. When the battery voltage
is in the range from overdischarge detection voltage (VDL) to overcharge detection voltage (VCU), and the VM pin
voltage is not more than the discharge overcurrent detection voltage (VDIOV), the S-8211D Series turns both the
charging and discharging control FETs on. This condition is called the normal status, and in this condition charging
and discharging can be carried out freely.
The resistance (RVMD) between the VM pin and the VDD pin, and the resistance (RVMS) between the VM pin and the
VSS pin are not connected in the normal status.
Caution When the battery is connected for the first time, discharging may not be enabled. In this case, short
the VM pin and the VSS pin, or set the VM pin’s voltage at the level of the charger detection voltage
(VCHA) or more and the discharge overcurrent detection voltage (VDIOV) or less by connecting the
charger. The S-8211D Series then returns to the normal status.
2. Overcharge status
When the battery voltage becomes higher than overcharge detection voltage (VCU) during charging in the normal
status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8211D Series turns the
charging control FET off to stop charging. This condition is called the overcharge status.
The resistance (RVMD) between the VM pin and the VDD pin, and the resistance (RVMS) between the VM pin and the
VSS pin are not connected in the overcharge status.
The overcharge status is released in the following two cases ( (1) and (2) ).
(1) In the case that the VM pin voltage is higher than or equal to charger detection voltage (VCHA), and is lower than
the discharge overcurrent detection voltage (VDIOV), the S-8211D Series releases the overcharge status when the
battery voltage falls below the overcharge release voltage (VCL).
(2) In the case that the VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV),
the S-8211D Series releases the overcharge status when the battery voltage falls below the overcharge detection
voltage (VCU).
When the discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises more
than the voltage at the VSS pin due to the Vf voltage of the parasitic diode. This is because the discharge current
flows through the parasitic diode in the charging control FET. If the VM pin voltage is higher than or equal to the
discharge overcurrent detection voltage (VDIOV), the S-8211D Series releases the overcharge status when the
battery voltage is lower than or equal to the overcharge detection voltage (VCU).
Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage (VCU) and the
battery voltage does not fall below overcharge detection voltage (VCU) even when a heavy load is
connected, discharge overcurrent detection and load short-circuiting detection do not function
until the battery voltage falls below overcharge detection voltage (VCU). Since an actual battery
has an internal impedance of tens of mΩ, the battery voltage drops immediately after a heavy
load that causes overcurrent is connected, and discharge overcurrent detection and load short-
circuiting detection function.
2. When a charger is connected after overcharge detection, the overcharge status is not released
even if the battery voltage is below overcharge release voltage (VCL). The overcharge status is
released when the VM pin voltage goes over charger detection voltage (VCHA) by removing the
charger.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 17
3. Overdischarge status
3. 1 With power-down function
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status and
the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211D Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the
overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and the VDD pin in the
S-8211D Series (RVMD). When voltage difference between the VM pin and the VDD pin then is 1.3 V typ. or lower, the
current consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down
status.
The resistance (RVMS) between the VM pin and the VSS pin is not connected in the power-down status and the
overdischarge status.
The power-down status is released when a charger is connected and the voltage difference between the VM pin and
the VDD pin becomes 1.3 V typ. or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status and turns the
discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status when the battery voltage
reaches overdischarge release voltage (VDU) or higher.
3. 2 Without power-down function
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status and
the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211D Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the
overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and the VDD pin in the
S-8211D Series (RVMD).
The resistance (RVMS) between the VM pin and the VSS pin is not connected in the overdischarge status.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status and turns the
discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status when the battery voltage
reaches overdischarge release voltage (VDU) or higher.
4. Discharge overcurrent status (discharge overcurrent, load short-circuiting)
When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the
discharge overcurrent detection voltage because the discharge current is higher than the specified value and the
status lasts for the discharge overcurrent detection delay time, the discharge control FET is turned off and discharging
is stopped. This status is called the discharge overcurrent status.
In the discharge overcurrent status, the VM pin and the VSS pin are shorted by the resistor between the VM pin and
the VSS pin (RVMS) in the S-8211D Series. However, the voltage of the VM pin is at the VDD potential due to the load
as long as the load is connected. When the load is disconnected completely, the VM pin returns to the VSS potential.
If the S-8211D Series detects that the voltage of the VM pin returns to discharge overcurrent detection voltage (VDIOV)
or lower, the discharge overcurrent status is restored to the normal status.
The S-8211D Series will be restored to the normal status from discharge overcurrent detection status even when the
voltage of the VM pin becomes the discharge overcurrent detection voltage (VDIOV) or lower by connecting the charger.
The resistance (RVMD) between the VM pin and the VDD pin is not connected in the discharge overcurrent detection
status.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
18
5. Abnormal charge current detection
During charging a battery which is in the normal status, if the VM pin voltage becomes lower than the charger
detection voltage (VCHA) and this status is held longer than the overcharge detection delay time (tCU), the S-8211D
Series turns off the charge-control FET to stop charging. This is abnormal charge current detection.
This function works in the case that the DO pin voltage is in "H", and the VM pin voltage becomes lower than the
charger detection voltage (VCHA). Thus if the abnormal charge current flows in the battery in the overdischarge status,
the S-8211D Series turns off the charge-control FET to stop charging; the DO pin voltage goes in "H" so that the
battery voltage becomes higher than the overdischarge detection voltage (VDL), and after the overcharge detection
delay time (tcu).
The status of abnormal charge current detection is released by the lower potential difference between the VM pin and
the VSS pin than the charger detection voltage (VCHA).
6. 0 V battery charge function "available"
This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V
battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ pin and EB− pin by
connecting a charger, the charging control FET gate is fixed to the VDD pin voltage.
When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turn-
on voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the
discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging
control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the
S-8211D Series enters the normal status.
Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please
ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.
7. 0 V battery charge function "unavailable"
This function inhibits recharging when a battery that is internally short-circuited (0 V battery) is connected. When the
battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is
fixed to the EB− pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery
voltage (V0INH) or higher, charging can be performed.
Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please
ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 19
8. Delay circuit
The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter.
Remark1. The discharge overcurrent detection delay time (tDIOV) and the load short-circuiting detection delay time
(tSHORT) start when the discharge overcurrent detection voltage (VDIOV) is detected. When the load short-
circuiting detection voltage (VSHORT) is detected over the load short-circuiting detection delay time (tSHORT)
after the detection of discharge overcurrent detection voltage (VDIOV), the S-8211D Series turns the
discharging control FET off within tSHORT from the time of detecting VSHORT.
DO pin
VM pin
V
DD
V
DD
Time
V
DIOV
V
SS
V
SS
V
SHORT
Load short-circuiting detection delay time (t
SHORT
)
Time
t
D
0 ≤ t
D
≤ t
SHORT
Figure 10
2. With power-down function
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge
detection delay time (tDL) without the load being released, the status changes to the power-down status at
the point where the battery voltage falls below overdischarge detection voltage (VDL).
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the
S-8211D Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery
of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is
still lower than the overdischarge detection voltage (VDL), the S-8211D Series shifts to the power-down
status.
Without power-down function
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge
detection delay time (tDL) without the load being released, the status changes to the overdischarge status
at the point where the battery voltage falls below overdischarge detection voltage (VDL).
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the
S-8211D Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery
of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is
still lower than the overdischarge detection voltage (VDL), the S-8211D Series shifts to the overdischarge
status.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
20
Timing Chart
1. Overcharge detection, overdischarge detection
VCU
VDU (VDL + VHD)
VDL
VCL (VCU − VHC)
Battery voltage
VSS
CO pin voltage
VDD
DO pin voltage
VSS
Charger connection
Load connection
Status*1
Overcharge detection delay time (tCU)Overdischarge detection delay time (
t
DL)
(1) (2) (1) (3) (1)
VDIOV
VSS
V
M pin voltage
VDD
VEB−
VDD
VEB−
*1. (1): Normal status
(2): Overcharge status
(3): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 11
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 21
2. Discharge overcurrent detection
V
DD
V
SS
V
SHORT
(1) (2) (1) (1)
Load short-circuiting
detection dela
y
time
(t
SHORT
)
(2)
V
DIOV
Discharge overcurrent
detection dela
y
time
(
t
DIOV
)
V
CU
V
DU
(V
DL
+ V
HD
)
V
DL
V
CL
(V
CU
− V
HC
)
Battery voltage
V
SS
CO pin voltage
V
DD
DO pin voltage
V
SS
Load connection
Status
*1
VM pin voltage
V
DD
*1. (1): Normal status
(2): Discharge overcurrent status
Remark The charger is assumed to charge with a constant current.
Figure 12
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
22
3. Charger detection
V
DD
DO pin voltage
V
SS
V
DD
V
SS
CO pin voltage
V
DD
V
SS
VM pin voltage
V
CHA
V
CU
V
DU
(V
DL
+ V
HD
)
V
DL
V
CL
(V
CU
− V
HC
)
Battery voltage
Status
*1
Load connection
Overdischarge detection
delay time (t
DL
)
(1)
In case VM pin voltage < V
CHA
Overdischarge is released at the
overdischarge detection voltage (V
DL
)
Charger connection
(2)(1)
*1. (1): Normal status
(2): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 13
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 23
4. Abnormal charge current detection
V
DD
DO pin voltage
V
SS
V
DD
V
SS
CO pin voltage
V
DD
V
SS
VM pin voltage
V
CHA
V
CU
V
DU
(V
DL
+ V
HD
)
V
DL
V
CL
(V
CU
− V
HC
)
Battery voltage
Charger connection
Abnormal charge current detection delay time
( = overcharge detection delay time (t
CU
))
Status
*1
Load connection
Overdischarge detection
delay time (t
DL
)
(1)
(2) (3)
(1)
(1)
*1. (1): Normal status
(2): Overdischarge status
(3): Overcharge status
Remark The charger is assumed to charge with a constant current.
Figure 14
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
24
Battery Protection IC Connection Example
R1
Battery C1
VSS
DO
VDD
CO VM
S-8211D Series
FET1 FET2
EB
−
EB
+
R2
Figure 15
Table 14 Constants for External Components
Symbol Part Purpose Min. Typ. Max. Remark
FET1 N-channel
MOS FET Discharge control − − −
Threshold voltage ≤ Overdischarge detection
voltage*1
Gate to source withstand voltage ≥ Charger
voltage*2
FET2 N-channel
MOS FET Charge control − − −
Threshold voltage ≤ Overdischarge detection
voltage*1
Gate to source withstand voltage ≥ Charger
voltage*2
R1 Resistor
ESD protection,
For power fluctuation 100 Ω 220 Ω 330 Ω
Resistance should be as small as possible to
avoid lowering the overcharge detection
accuracy due to current consumption.*3
C1 Capacitor For power fluctuation 0.022 μF 0.1 μF 1.0 μF Connect a capacitor of 0.022 μF or higher
between VDD pin and VSS pin.*4
R2 Resistor
Protection for reverse
connection of a charger 300 Ω 2 kΩ 4 kΩ
Select as large a resistance as possible to
prevent current when a charger is connected
in reverse.*5
*1. If the threshold voltage of an FET is low, the FET may not cut the charge current. If an FET with a threshold voltage equal
to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is
detected.
*2. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
*3. If a high resistor is connected to R1, the voltage between the VDD pin and the VSS pin may exceed the absolute
maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a
resistor of 100 Ω or higher as R1 for ESD protection.
*4. If a capacitor of less than 0.022 μF is connected to C1, the DO pin may oscillate when load short-circuiting is detected. Be
sure to connect a capacitor of 0.022 μF or higher to C1.
*5. If a resistor of 4 kΩ or higher is connected to R2, the charging current may not be cut when a high-voltage charger is
connected.
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 25
Precautions
• The application conditions for the input voltage, output voltage, and load current should not exceed the package power
dissipation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
26
Characteristics (Typical Data)
1. Current consumption
1. 1 IOPE vs. Ta 1. 2 IPDN vs. Ta
−40 −25 0 25 50 75 85
6
5
4
3
2
1
0
Ta [ °C]
I
OPE
[μA]
−40 −25 0 25 50 7585
Ta [°C]
0.16
0.14
0.12
0.10
0.08
0.06
0
I
PDN
[μA]
0.04
0.02
1. 3 IOPE vs. VDD
0 2 4 6
V
DD
[V]
6
5
4
3
2
1
0
I
OPE
[μA]
8
2. Overcharge detection / release voltage, overdischarge detection / release voltage, overcurrent
detection voltage, and delay time
2. 1 VCU vs. Ta 2. 2 VCL vs. Ta
−40 −25 0 25 50 75 85
Ta [ °C]
4.350
4.345
4.340
4.335
4.330
4.325
4.300
V
CU
[V]
4.320
4.315
4.310
4.305
−40−25 0 25 50 75 85
Ta [°C]
4.125
4.115
4.105
4.095
4.085
4.075
4.025
V
CL
[V]
4.065
4.055
4.045
4.035
2. 3 VDU vs. Ta 2. 4 VDL vs. Ta
−40 −25 0 25 50 75 85
Ta [ °C]
2.95
2.94
2.93
2.92
2.91
2.90
2.85
V
DU
[V]
2.89
2.88
2.87
2.86
−40 −25 0 25 50 75 85
Ta [ °C]
2.60
2.58
2.56
2.54
2.52
2.50
2.40
V
DL
[V]
2.48
2.46
2.44
2.42
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 27
2. 5 tCU vs. Ta 2. 6 tDL vs. Ta
−40 −25 0 25 50 7585
Ta [°C]
1.50
1.45
1.40
1.35
1.30
1.25
1.00
t
CU
[s]
1.20
1.15
1.10
1.05
−40 −25 0 25 50 7585
Ta [°C]
200
190
180
170
160
150
100
t
DL
[ms]
140
130
120
110
2. 7 VDIOV vs. Ta 2. 8 tDIOV vs. VDD
−40 −25 0 25 50 7585
Ta [ °C]
0.175
0.170
0.165
0.160
0.155
0.150
0.125
V
DIOV
[V]
0.145
0.140
0.135
0.130
3.0 3.5 4.0 4.5
VDD [V]
14
13
12
11
10
9
4
tDIOV [ms]
8
7
6
5
2. 9 tDIOV vs. Ta 2. 10 VSHORT vs. Ta
−40 −25 0 25 50 75 85
Ta [°C]
14
13
12
11
10
9
4
tDIOV [ms]
8
7
6
5
0.75
0.70
0.65
0.60
0.55
0.50
0.25
VSHORT [V]
0.45
0.40
0.35
0.30
−40 −25 0 25 50 7585
Ta [ °C]
2. 11 tSHORT vs. VDD 2. 12 tSHORT vs. Ta
3.0 3.5 4.0 4.5
V
DD
[V]
0.65
0.63
0.61
0.59
0.57
0.55
0.45
t
SHORT
[ms]
0.53
0.51
0.49
0.47
−40 −25 0 25 50 7585
Ta [°C]
1.0
0.9
0.8
0.7
0.6
0.5
0
t
SHORT
[ms]
0.4
0.3
0.2
0.1
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
28
3. CO pin / DO pin
3. 1 ICOH vs. VCO 3. 2 ICOL vs. VCO
0
−0.1
−0.2
−0.5
I
COH
[mA]
−0.3
−0.4
0 1 2 3 4
V
CO
[V]
0.5
0.4
0.3
0
I
COL
[mA]
0.2
0.1
0 1 2 3 4
V
CO
[V]
3. 3 IDOH vs. VDO 3. 4 IDOL vs. VDO
0 1 2 3 4
VDO [V]
0
−0.05
−0.10
−0.15
−0.30
IDOH [mA]
−0.20
−0.25
0 0.5 1.0 1.5
VDO [V]
0.20
0.15
0.10
0
IDOL [mA]
0.05
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.6.3_00 S-8211D Series
Seiko Instruments Inc. 29
Marking Specifications
1. SOT-23-5
(1) to (3): Product code (refer to Product name vs. Product code)
(4): Lot number
123
45
Top view
(1) (2) (3) (4)
Product name vs. Product code
Product Code
Product Name (1) (2) (3)
S-8211DAD-M5T1x R 2 D
S-8211DAE-M5T1x R 2 E
S-8211DAH-M5T1x R 2 H
S-8211DAI-M5T1x R 2 I
S-8211DAJ-M5T1x R 2 J
S-8211DAK-M5T1x R 2 K
S-8211DAL-M5T1x R 2 L
S-8211DAM-M5T1x R 2 M
S-8211DAR-M5T1x R 2 R
S-8211DAS-M5T1x R 2 S
S-8211DAU-M5T1y R 2 U
S-8211DAV-M5T1y R 2 V
S-8211DAW-M5T1y R 2 W
Remark 1. x: G or U
y: S or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series Rev.6.3_00
Seiko Instruments Inc.
30
2. SNT-6A
(1) to (3): Product code (refer to Product name vs. Product code)
(4) to (6): Lot number
1
3
6
4
25
Top view
(1) (2) (3)
(4) (5) (6)
Product name vs. Product code
Product Code
Product Name (1) (2) (3)
S-8211DAD-I6T1x R 2 D
S-8211DAE-I6T1x R 2 E
S-8211DAF-I6T1x R 2 F
S-8211DAG-I6T1x R 2 G
S-8211DAI-I6T1x R 2 I
S-8211DAN-I6T1x R 2 N
S-8211DAQ-I6T1x R 2 Q
S-8211DAT-I6T1x R 2 T
S-8211DAX-I6T1x R 2 X
S-8211DAY-I6T1x R 2 Y
S-8211DAZ-I6T1x R 2 Z
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
mm
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
mm
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
mm
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.0
No. PG006-A-P-SD-2.0
0.2±0.05
0.48±0.02
0.08 +0.05
-0.02
0.5
1.57±0.03
123
45
6
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.85±0.05 0.65±0.05
0.25±0.05
5°
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PG006-A-C-SD-1.0
SNT-6A-A-Carrier Tape
No. PG006-A-C-SD-1.0
+0.1
-0
1
2
4
3
56
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY.
No. PG006-A-R-SD-1.0
PG006-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-Reel
5,000
No.
TITLE
SCALE
UNIT mm
SNT-6A-A-Land Recommendation
Seiko Instruments Inc.
PG006-A-L-SD-4.0
No. PG006-A-L-SD-4.0
0.3
0.2
0.52
1.36
0.52
1
2
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
1.
2.
※1. 䇋⊼ᛣ⛞Ⲭᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
※2. 䇋࣓ᇕ㺙Ё䯈ᠽሩ⛞Ⲭᓣ (1.30 mm ~ 1.40 mm)DŽ
⊼ᛣ1. 䇋࣓㛖ൟᇕ㺙ⱘϟ䴶ࠋϱ㔥ǃ⛞䫵DŽ
2. ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰ᑺ (Ң⛞Ⲭᓣ㸼䴶䍋) 䇋ࠊ0.03 mmҹϟDŽ
3. 㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛ"DŽ
www.sii-ic.com
• The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instruments Inc.
• The products described herein are not designed to be radiation-proof.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
