DUAL DIODE MODULE Spec.NoSR2-SP-06002 R4 P1 MDM600E45A OUTLINE DRAWING Unit in mm FEATURES Low noise due to soft and fast recovery diodes. High reliability, high durability diodes. Isolated heat sink(terminal to base). CIRCUIT DIAGRAM C(K) C(K) E(A) E(A) Weight : 900(g) ABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MDM600E45A Repetitive Peak Reverse Voltage DC Forward Current 1ms Junction Temperature Storage Temperature Terminals-base Isolation Test Voltage Terminal 1-Terminal 2 Screw Torque Terminals (M8) Mounting (M6) VRRM IF IFM Tj Tstg VISO VISO T-T - V 4,500 600 1,200 -40 +125 -40 +125 6,000 (AC 1 minute) 6,000 (AC 1 minute) 15 6 Notes: (1) Recommended Value 15+0/-3N*m (2) Recommended Value 5.50.5N*m ELECTRICAL CHARECTERISTICS Item Symbol Unit Repetitive Reverse Current Forward Voltage Drop Reverse Recovery Time Reverse Recovery Loss IRRM VF trr Err(10%) mA V s J/P PACKAGE CHARECTERISTICS Item Symbol Unit Terminal Resistance Terminal Stray Inductance Thermal Impedance Comparative tracking index Contact Thermal Impedance A VRMS N*m Min. Typ. Max. 14 4.5 0.6 0.7 Min. Typ. Max. m nH - Rth(j-c) CTI Rth(c-f) K/W - 0.3 35 27 5.3 1.0 1.0 VAK=4,500V, Tj=125 IF=600A, Tj=125 VCC=2,600V, IF=600A, L=130nH o Tj=125 C Rg=3.3 (3) Test Conditions - 0.026 Junction to case 600 0.008 Case to fin per module Notes:(3) Counter arm; MBN600E45A VGE=+/-15V RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ (1) (2) Test Conditions 3.3 - RCE LsCE K/W DUAL DIODE MODULE Spec.NoSR2-SP-06002 R4 MDM600E45A DUT Ls=130nH LLOAD Vcc Rg(on/off)= 3.3 MBN600E45A Fig.1 Switching test circuit Ic Vce Ls= VL ( dIc d )t=t t 0 VL tL Fig.2 Definition of Ls Vce 0.1Vce Irm 0.5Irm 0.1IF 0 t trr Ic t3 t1 t2 t4 t2 Err(10%)= IFVce dt t1 t4 Err(Full)= IFVce dt t3 Fig.3 Definition of switching loss http://store.iiic.cc/ L P2 DUAL DIODE MODULE Spec.NoSR2-SP-06002 R4 P3 MDM600E45A TYPICAL TYPICAL 2.0 1200 Condition Condition VGE=15VRG=3.3 VD=2600VL130nHTc=125 Inductive load 1000 1.5 Tc=125 800 Recovery Loss , Err (J/pulse) Forward Current , IF (A) Tc=25 600 400 Err(Full) 1.0 0.5 200 0 0.0 0 1 2 3 4 5 6 7 8 9 0 100 200 Forward Voltage, VF(V) 300 400 500 600 700 Forward Current , IF (A) Forward Voltage of free-wheeling diode Recovery Loss vs.Collector Current TYPICAL TYPICAL 1.0 Vcc=3000V, Tj=125C Rg=3.3ohm, Ls=130nH Condition Condition IF:1000A/div VCE:1000V/div (A) 1200A cI 0A 0V Time:1us/div Recovery Waveform of Diode 2000 Vcc=3000V, Tj=125C Rg=3.3ohm, Ls=130nH 0.4 1500 1000 1.2MW 0.2 500 Hitachi RRSOA 0 0 0.0 0 100 200 300 400 500 600 700 Forward Current , IF (A) Recovery time vs. Forward current http://store.iiic.cc/ EC V VF (= -3000V 0.6 Ic(A) Recovery Time, trr ( s) IF (= 0.8 (V) VGE=15VRG=3.3 VD=2600VL130nHTc=125 Inductive load 1000 2000 VCE(V) 3000 Recovery SOA 4000 DUAL DIODE MODULE Spec.NoSR2-SP-06002 R4 P4 MDM600E45A Transient thermal impedance: Rth(j-c) [K/W] 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Time: t [s] Transient Thermal Impedance Negative environmental impact material Please note the following negative environmental impact materials are contained in the product in order to keep product characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder http://store.iiic.cc/ DUAL DIODE MODULE Spec.NoSR2-SP-06002 R4 P5 MDM600E45A HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4. 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