DUAL DIODE MODULE
Spec.NoSR2-SP-06002 R4
P1
MDM600E45A
FEATURES
Low noise due to soft and fast recovery diodes.
High reliability, high durability diodes.
Isolated heat sink(terminal to base).
ABSOLUTE MAXIMUM RATINGS
(TC=25
)
Item Symbol Unit MDM600E45A
Repetitive Peak Reverse Voltage V
RRM
V 4,500
DC I
F
600
Forward Current 1ms I
FM
A 1,200
Junction Temperature Tj
-40
+125
Storage Temperature Tstg
-40
+125
Terminals-base V
ISO
6,000 (AC 1 minute)
Isolation Test
Voltage Terminal 1-Terminal 2
V
ISO T-T
V
RMS
6,000 (AC 1 minute)
Terminals (M8) - 15 (1)
Screw Torque Mounting (M6) - N·m 6 (2)
Notes: (1) Recommended Value
15
+0
/
-3
N·m
(2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARECTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Repetitive Reverse Current I
RRM
mA - 14 27 VAK=4,500V, Tj=125
Forward Voltage Drop V
F
V 3.3
4.5
5.3
IF=600A, Tj=125
Reverse Recovery Time trr µs - 0.6
1.0
Reverse Recovery Loss E
rr(10%)
J/P - 0.7
1.0
V
CC
=2,600V, IF=600A, L=130nH
Tj=125
o
C Rg=3.3
Ω
(3)
PACKAGE CHARECTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Terminal Resistance R
CE
m
Ω
- 0.3
-
Terminal Stray Inductance Ls
CE
nH - 35 -
Thermal Impedance Rth(j-c)
K/W
- - 0.026
Junction to case
Comparative tracking index CTI - 600
-
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.008
- Case to fin per module
Notes:(3) Counter arm; MBN600E45A VGE=+/-15V
R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
CIRCUIT DIAGRAM
OUTLINE DRAWING
C(K)
E(A)
C(K)
E(A)
Unit in mm
Weight : 900
(
g
)
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DUAL DIODE MODULE
Spec.NoSR2-SP-06002 R4
P2
MDM600E45A
Vcc
Fig.2 Definition of Ls
Ic
t
0
VL
tL
Vce
t=t
L
Vce
0.1Vce
0.1IF
0.5Irm
Irm
Ic
trr
t2t1
t
0
Fig.1 Switching test circuit
Ls=130nH
Ls= V
L
dIc
d
( )
Fig.3 Definition of switching loss
L
LOAD
Rg(on/off)=
3.3
Ω
Err(10%)=
IFVce dt
t2
t1
t3
t4
DUT
DUTDUT
DUT
MBN600E45A
MBN600E45AMBN600E45A
MBN600E45A
Err(Full)=
IFVce dt
t4
t3
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DUAL DIODE MODULE
Spec.NoSR2-SP-06002 R4
P3
MDM600E45A
0
200
400
600
800
1000
1200
0 1 2 3 4 5 6 7 8 9
Forward Voltage, VF(V)
Forward Current , IF (A)
TYPICAL
Tc=125
Tc=25
Forward Voltage of free-wheeling diode
0.0
0.5
1.0
1.5
2.0
0 100 200 300 400 500 600 700
Forward Current , IF (A)
Recovery Loss , Err (J/pulse)
Err(Full)
TYPICAL
Recovery Loss vs.Collector Current
Condition
ConditionCondition
Condition
VGE=±15VRG=3.3Ω
VD=2600VL130nHTc=125
Inductive load
0.0
0.2
0.4
0.6
0.8
1.0
0 100 200 300 400 500 600 700
Forward Current , IF (A)
Recovery Time, trr (
µ
µ
µ
µs)
Recovery time vs. Forward current
TYPICAL
Condition
ConditionCondition
Condition
VGE=±15VRG=3.3Ω
VD=2600VL130nHTc=125
Inductive load
TYPICAL
0
500
1000
1500
2000
0 1000 2000 3000 4000
Vcc=3000V, Tj=125C
Rg=3.3ohm, Ls=130nH
IF:1000A/div
VCE:1000V/div
Time:1us/div
Recovery Waveform of Diode
VCE(V)
Ic(A)
-3000V
0V
1200A
0A
Vcc=3000V, Tj=125C
Rg=3.3ohm, Ls=130nH
Recovery SOA
IF (=
I
c
 
(A)
VF (=
V
C
E
 
(V)
1.2MW
Hitachi
RRSOA
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DUAL DIODE MODULE
Spec.NoSR2-SP-06002 R4
P4
MDM600E45A
Negative environmental impact material
Please note the following negative environmental impact materials are contained in the
product in order to keep product characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time: t [s]
Transient thermal impedance: Rth(j-c) [K/W]
Transient Thermal Impedance
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DUAL DIODE MODULE
Spec.NoSR2-SP-06002 R4
P5
MDM600E45A
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.pi.hitachi.co.jp/pse
Notices
NoticesNotices
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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