MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TIM5964-35SLA
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DIST ORTION HIGH GAIN
IM3=-45 dBc at Po= 35.0dBm, G1dB=9.0dB at 5.9GHz to 6.4GHz
Single Carrier Level BROAD BAND INTERN ALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=45.5dBm at 5.9GHz to 6.4GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
P1dB dBm 45.0 45.5 ⎯
Power Gain at 1dB Gain
Compression Point
G1dB dB 8.0 9.0 ⎯
Drain Current IDS1 A ⎯ 8.0 9.0
Gain Flatness ΔG dB ⎯ ⎯ ±0.8
Power Added Efficiency ηadd
VDS=10V
f = 5.9 to 6.4GHz
% ⎯ 39 ⎯
3rd Order Intermodulation
Distortion
IM3 dBc -42 -45
⎯
Drain Current IDS2
Two-Tone Test
Po=35.0dBm
(Single Carrier Level) A ⎯ 8.0 9.0
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C ⎯ ⎯ 100
Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
IDS= 10.5A
mS ⎯ 6500 ⎯
Pinch-off Voltage VGSoff VDS= 3V
IDS= 140mA
V -1.0 -2.5 -4.0
Saturated Drain Current IDSS VDS= 3V
VGS= 0V
A ⎯ 20 ⎯
Gate-Source Breakdown
Voltage
VGSO IGS= -420μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 1.0 1.3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Oct. 2006
TIM5964-35SLA
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 20
Total Power Dissipation (Tc= 25 °C) PT W 115.4
Channel Temperature Tch °C 175
Storage Tstg °C -65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time s hould not exceed 10 seconds
at 260°C.
2
TIM5964-35SLA
RF PERFORMANCE
3
42
43
44
45
46
47
5.9 6.0 6.1 6.2 6.3 6.4
Output Power vs. Frequency
Frequency (GHz)
VDS= 10 V
IDS≅ 8 A
Pin= 36.5 dBm
Po
(
dBm
)
Output Power vs. Input Pow er
f=6.15 GHz
VDS= 10 V
48 IDS≅ 8 A
46
Pin(dBm)
Po
(
dBm
)
ηadd(%)
Po
η
add
30 32 34 36 38 40
44
42
40
90
70
50
30
10
TIM5964-35SLA
0
20
40
60
80
100
120
0 40 80 120 160 200
Power Dissipation vs. Case Temperature
PT(W)
Tc(°C)
IM3 vs. Output Power Characteristics
VDS=10V
IDS≅ 8 A
freq.=6.15GHz
Δf=5MHz
30
-10
-20
-30
-40
-50
-60
IM3(dBc)
32 34 36 38 40
Pout(dBm) @Single carrier level
4
