ee FAIRCHILD ee SEMICONDUCTOR m MPSA64 MMBTA64 Discrete POWER & Signal Technologies PZTA64 SOT-23 B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absol ute Maxi mu m Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Voces Collector-Emitter Voltage 30 Vv Voso Collector-Base Voltage 30 Vv Veo Emitter-Base Voltage 10 Vv Io Collector Current - Continuous 1.2 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSA64 *MMBTA64 *PZTAG4 Pp Total Device Dissipation 625 350 1,000 mw Derate above 25C 5.0 2.8 8.0 mWw/eC Reuc Thermal Resistance, Junction to Case 83.3 C/W Rega Thermal Resistance, Junction to Ambient 200 357 125 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 em. A64, Rev A 1997 Fairchild Semiconductor Corporation v9VLZd / VYVLEWIW / pP9VSdINPNP Darlington Transistor Electrical Characteristics TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vieryces Collector-Emitter Breakdown Voltage lo = 100 pA, Ip = 0 30 Vv leso Collector-Cutoff Current Vop = 30 V, IE =0 100 nA leBo Emitter-Cutoff Current Vep=10V, Ilo =0 100 nA ON CHARACTERISTICS* hee DC Current Gain lo = 10 MA, Voce = 5.0 V 10,000 Io = 100 MA, Vor = 5.0 V 20,000 Voeisat) Collector-Emitter Saturation Voltage Ip = 100 mA, Ip = 0.1 mA 1.5 Vv Vee(on) Base-Emitter On Voltage Ig = 100 MA, Voce = 5.0 V 2.0 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product lo = 10 mA, Voce = 5.0 V, 125 MHz f = 100 MHz *Bulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current a oO Voge = 5V BR oO wo oO np oO o 2 2 0.1 I- COLLECTOR CURRENT (A) h,,.- TYPICAL PULSED CURRENT GAIN (K) Collector-Emitter Saturation Voltage vs Collector Current a B = 1000 = for) ip eS n So 2 2 0.01 Veesar> COLLECTOR EMITTER VOLTAGE (V) 0.1 I, - COLLECTOR CURRENT (A) v9VLZd / VYVLEWIW / pP9VSdINPNP Darlington Transistor (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current nm B = 1000 a iy for) eS n Vaegar7 BASE EMITTER VOLTAGE (V) 0.001 0.01 0.1 1 I- COLLECTOR CURRENT (A) Collector-Cutoff Current vs. Ambient Temperature 100 pe SSS = = 5 FVog= 15V SO ec 2 = 5 = 5 = wy a a 0.1 | t t t t t t t 1 859, . 1 ~ 25 50 75 100 12 T,: AMBIENT TEMPERATURE (C) Vseon - BASE EMITTER ON VOLTAGE (V) CAPACITANCE (pF) Base Emitter ON Voltage vs Collector Current nm a iy for) Voe=5V eS n So 2 3 0.01 0.1 1 |,- COLLECTOR CURRENT (A) Input and Output Capacitance vs Reverse Bias Voltage o =1.0 nm ao BK 0.1 1 10 100 REVERSE VOLTAGE (V) Power Dissipation vs Ambient Temperature o 2 wv a P, - POWER DISSIPATION (W) S a 0 25 50 TEMPERATURE (C) 100 125 150 v9VLZd / VYVLEWIW / pP9VSdIN