APTC60BBM24T3G Boost buck chopper MOSFET Power Module VDSS = 600V RDSon = 24m max @ Tj = 25C ID = 95A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * CoolMOSTM - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance * Internal thermistor for temperature monitoring * High level of integration 28 27 23 22 18 17 31 Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant 14 32 13 2 3 6 7 10 11 All multiple inputs and outputs must be shorted together Example: 10/11 ; 13/14 ; 6/7 ... Absolute maximum ratings (per CoolMOS) ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 600 95 70 260 20 24 462 15 3 1900 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTC60BBM24T3G- Rev 0 May, 2011 Symbol VDSS APTC60BBM24T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics (per CoolMOS) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = 20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit A m V nA Dynamic Characteristics (per CoolMOS) Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz nF 300 VGS = 10V VBus = 300V ID = 95A nC 68 102 21 Inductive Switching (125C) VGS = 10V VBus = 400V ID = 95A RG = 2.5 30 ns 100 45 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 1350 J 1040 2200 J 1270 Chopper diode ratings and characteristics (per diode) VRRM IRM Test Conditions Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=600V IF = 120A IF = 240A IF = 120A V Tj = 25C Tj = 125C Tc = 80C 500 1000 Tj = 125C 120 1.6 1.9 1.4 Tj = 25C Tj = 25C 130 IF = 120A VR = 400V Tj = 125C 170 di/dt = 400A/s Tj = 25C 440 Tj = 125C 1840 www.microsemi.com Unit A A 1.8 V ns nC 2-7 APTC60BBM24T3G- Rev 0 May, 2011 Symbol Characteristic APTC60BBM24T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Per CoolMOS Per diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2.5 Max 0.27 0.46 Unit C/W V 150 125 100 4.7 110 C N.m g Temperature sensor NTC Symbol R25 R25/R25 B/B B 25/100 Characteristic Resistance @ 25C Resistance tolerance Beta tolerance T25 = 298.16 K RT = Min Typ 22 Max 5 3 3980 Unit k % K R25 1 1 - exp B25 / 100 T T 25 T: Thermistor temperature RT: Thermistor value at T www.microsemi.com 3-7 APTC60BBM24T3G- Rev 0 May, 2011 SP3F Package outline (dimensions in mm) APTC60BBM24T3G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 200 160 120 80 TJ=125C 40 TJ=25C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 95A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 240 0.9 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (C) 150 4-7 APTC60BBM24T3G- Rev 0 May, 2011 ID, Drain Current (A) 640 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 s 1 ms Single pulse TJ=150C TC=25C 10 0.6 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) C, Capacitance (pF) VGS=10V ID= 95A 2.5 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=95A TJ=25C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 5-7 APTC60BBM24T3G- Rev 0 May, 2011 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60BBM24T3G APTC60BBM24T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=2.5 TJ=125C L=100H 80 60 40 VDS=400V RG=2.5 TJ=125C L=100H 60 50 tr and tf (ns) 40 30 tr 20 td(on) 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy (mJ) Switching Energy (mJ) Eon Eoff 2 1 VDS=400V ID=95A TJ=125C L=100H 4 3 Eoff Eon 2 1 0 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 ZVS 200 ZCS 150 VDS=400V D=50% RG=2.5 TJ=125C TC=75C 100 hard switching 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 10 15 20 25 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Frequency (kHz) 80 100 120 140 160 5 VDS=400V RG=2.5 TJ=125C L=100H 3 60 ID, Drain Current (A) Switching Energy vs Current 4 tf 90 TJ=150C 100 TJ=25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTC60BBM24T3G- Rev 0 May, 2011 td(on) and td(off) (ns) 120 APTC60BBM24T3G Typical diode performance curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.5 0.9 0.4 0.7 0.3 0.5 0.2 Single Pulse 0.3 0.1 0 0.00001 0.1 0.05 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 200 250 200 150 100 TJ=125C 50 TJ=25C 0 0.0 0.5 1.0 1.5 150 120 A 60 A 125 100 75 50 2.0 0 400 QRR vs. Current Rate Charge 240 A TJ=125C VR=400V 4 120 A 60 A 3 2 1 0 400 800 1200 1600 2000 2400 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (C) VF, Anode to Cathode Voltage (V) 5 -diF/dt (A/s) TJ=125C VR=400V 240 A 175 800 1200 1600 2000 2400 -diF/dt (A/s) IRRM vs. Current Rate of Charge 80 TJ=125C VR=400V 60 60 A 240 A 120 A 40 20 0 0 400 800 1200 1600 2000 2400 -diF/dt (A/s) Capacitance vs. Reverse Voltage 1600 1200 800 400 0 0.1 1 10 100 1000 VR, Reverse Voltage (V) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 7-7 APTC60BBM24T3G- Rev 0 May, 2011 C, Capacitance (pF) 2000