APTC60BBM24T3G - Microsemi Corp.

APTC60BBM24T3G

APTC60BBM24T3G– Rev 0 May, 2011

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32

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11107

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13

22 18 17

All multiple inputs and outputs must be shorted together

Example: 10/11 ; 13 /14 ; 6/7 …

Absolute maximum ra tings (per CoolMOS)

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi .com

Symbol Parameter Max ratings Unit

VDSS Drain - Source Breakdown Voltage 600 V

Tc = 25°C 95

ID Continuous Drain Current Tc = 80°C 70

IDM Pulsed Drain current 260 A

VGS Gate - Source Voltage ±20 V

RDSon Drain - Source ON Resistance 24 mΩ

PD Maxi mum Powe r Dissipat ion Tc = 25°C 462 W

IAR Avalanche current (repetitive and non repetitive) 15 A

EAR Repetitive Avalanche Energy 3

EAS Single Pulse Avalanche Energy 1900 mJ

VDSS = 600V

RDSon = 24mΩ max @ Tj = 25°C

ID = 95A @ Tc = 25°C

Application

• AC and DC motor control

• Switched Mode Power Supplies

• Power Factor Correction

Features

• CoolMOS™

- Ultra low RDSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outstanding performance at high frequency operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

• RoHS Compliant

Boost buck chopper

MOSFET Power Module

APTC60BBM24T3G

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Char ac teristics (per CoolMOS)

Symbol Characteristic Test Conditions Min Typ Max Unit

VGS = 0V,VDS = 600V Tj = 25°C 350

IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 600 µA

RDS(on) Drain – Source on Resistance VGS = 10V, ID = 47.5A 24 mΩ

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 2.1 3 3.9 V

IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 200 nA

Dynamic Characteristics (per CoolMOS)

Symbol Characteristic Test Conditions Min Typ Max Unit

Ciss Input Capacitance 14.4

Coss Output Capacitance VGS = 0V ; VDS = 25V

f = 1MHz 17 nF

Qg Total gate Charge 300

Qgs Gate – Source Charge 68

Qgd Gate – Drain Charge

VGS = 10V

VBus = 300V

ID = 95A 102

nC

Td(on) Turn-on Delay Time 21

Tr Rise Time 30

Td(off) Turn-off Delay Time 100

Tf Fall Time

Inductive Switching (125°C)

VGS = 10V

VBus = 400V

ID = 95A

RG = 2.5Ω 45

ns

Eon Turn-on Switching Energy 1350

Eoff Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 10V ; VBus = 400V

ID = 95A ; RG = 2.5Ω 1040 µJ

Eon Turn-on Switching Energy 2200

Eoff Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 10V ; VBus = 400V

ID = 95A ; RG = 2.5Ω 1270 µJ

Chopper diode ratings and characteristics (per diode)

Symbol Characteristic Test Conditions Min Typ Max Unit

VRRM Maximum Peak Repetitive Reverse Volt age 600 V

Tj = 25°C 500

IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 1000 µA

IF DC Forward Current Tc = 80°C 120 A

IF = 120A 1.6 1.8

IF = 240A Tj = 25°C 1.9

VF Diode Forw ard Voltage IF = 120A Tj = 125°C 1.4 V

Tj = 25°C 130

trr Reverse Recovery Time Tj = 125°C 170 ns

Tj = 25°C 440

Qrr Reverse Recovery Charge

IF = 120A

VR = 400V

di/dt = 400A/µs

Tj = 125°C 1840 nC

APTC60BBM24T3G

APTC60BBM24T3G– Rev 0 May, 2011

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

Per CoolMOS 0.27

RthJC Junction to Case Thermal Resistance Per diode 0.46 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100 °C

Torque Mounting torque To heatsink M4 2.5 4.7 N.m

Wt Package Weight 110 g

Temperature sensor NTC

Symbol Characteristic Min Typ Max Unit

R25 Resistance @ 25°C 22 kΩ

ΔR25/R25 Resistance tolerance 5

ΔB/B Beta tolerance 3

%

B 25/100 T

25 = 298.16 K 3980 K

⎥

⎦

⎤

⎢

⎣

⎡

⎟

⎠

⎞

⎜

⎝

⎛−

=

TT

B

R

RT11

exp

25

100/25

25

SP3F Package outline (dimensions in mm)

T: Thermistor temperature

RT: Thermistor value at T

APTC60BBM24T3G

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Typical CoolMOS Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pul se Duration (S econd s)

Thermal I mpedance (°C/ W)

Maximu m Effective Transient Thermal I mpedance, Junction to Case vs Pul se Duratio n

4V

4.5V

5V

5.5V

6V

6.5V

0

80

160

240

320

400

480

560

640

720

0 5 10 15 20 25

VDS, Drain to Sou rce Voltage (V)

ID, Drain Current (A)

V

GS

=15&10V

Low Vol tage Outp ut Char acteristi cs Transfert Characteristics

T

J

=25°C

T

J

=125°C

0

40

80

120

160

200

240

280

01234567

VGS, Gate to Source Voltage (V)

ID, Drain Cur ren t (A)

V

DS

> I

D

(on)xR

DS

(on)MAX

250µs pulse test @ < 0.5 duty cycle

RDS(on) vs Drain Current

V

GS

=10V

V

GS

=20V

0.9

0.95

1

1.05

1.1

1.15

1.2

1.25

1.3

0 40 80 120 160 200 240 280

ID, Drain Curr ent (A)

RDS(on) Drain to Source ON Resistance

Normalized to

V

GS

=10V @ 95A

0

20

40

60

80

100

25 50 75 100 125 150

TC, Case Temperature (°C)

ID, DC Drain Current (A)

DC Drain Current vs Case Temperature

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0.8

0.9

1.0

1.1

1.2

25 50 75 100 125 150

T

J

, Junction Temperatur e (°C)

Breakdown V oltage vs Temperature

BV

DSS

, Drain to Source Breakdown

Voltage (Normalized)

ON resistance vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

25 50 75 100 125 150

T

J

, Junction Temperature (°C)

R

DS

(on), Drain to Source ON resistance

(Normalized)

V

GS

=10V

I

D

= 95A

Threshold Voltage vs Temperature

0.6

0.7

0.8

0.9

1.0

1.1

25 50 75 100 125 150

T

C

, Case Temperature (°C)

V

GS

(TH), Threshold Voltage

(Normalized)

Maxim um Safe Operating Area

10 ms

1 ms

100 µs

1

10

100

1000

1 10 100 1000

V

DS

, Drain to Source Voltage (V)

I

D

, Drain Cur ren t (A)

limited b

y

R

DS

on

Single pulse

T

J

=150°C

T

C

=25°C

Ciss

Crss

Coss

10

100

1000

10000

100000

1000000

0 1020304050

V

DS

, Drain to Sou rce Voltage (V)

C, Capaci tan ce (pF)

Capacitance vs Drain to Source Voltage

V

DS

=120V

V

DS

=300V

V

DS

=480V

0

2

4

6

8

10

12

0 40 80 120 160 200 240 280 320

Gate Charge (nC)

V

GS

, Gate to Source Voltage (V)

Gate Charge vs Gate to Source Voltage

I

D

=95A

T

J

=25°C

APTC60BBM24T3G

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T

J

=25°C

T

J

=150°C

1

10

100

1000

0.3 0.5 0.7 0.9 1.1 1.3 1.5

V

SD

, Source to Drain Voltage (V)

I

DR

, Reverse Drain Current (A)

Source to Drain Diode Forward Voltage

Delay Times vs Current

td(on)

td(off)

0

20

40

60

80

100

120

140

0 20406080100120140160

I

D

, Drain Current (A)

t

d(on)

and t

d(off)

(ns)

V

DS

=400V

R

G

=2.5Ω

T

J

=125°C

L=100µH

Rise and Fall times vs Current

t

r

t

f

0

10

20

30

40

50

60

70

0 20 40 60 80 100 120 140 160

I

D

, Drain Cur rent (A)

t

r

and t

f

(ns)

V

DS

=400V

R

G

=2.5Ω

T

J

=125°C

L=100µH

Switching Energy vs Current

E

on

E

off

0

1

2

3

4

0 20 40 60 80 100 120 140 160

I

D

, Drain Cur rent (A)

Switching Energy (mJ)

V

DS

=400V

R

G

=2.5Ω

T

J

=125°C

L=100µH

E

on

E

off

0

1

2

3

4

5

0 5 10 15 20 25

Gate Resistance (Ohms)

Switching E ner gy (m J)

Switchi ng En ergy vs Gate Resistance

V

DS

=400V

I

D

=95A

T

J

=125°C

L=100µH

hard

switching

ZCS

ZVS

0

50

100

150

200

250

300

10 20 30 40 50 60 70 80 90

I

D

, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Current

V

DS

=400V

D=50%

R

G

=2.5Ω

T

J

=125°C

T

C

=75°C

APTC60BBM24T3G

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Typical diode performance curves

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.00001 0.0001 0.001 0.01 0.1 1

Rectangular Pul se Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Ther mal Im ped a n ce, Junction to Case vs Pu lse Duration

TJ=25°C

TJ=125°C

0

50

100

150

200

250

0.0 0.5 1.0 1.5 2.0

V

F

, Anode to Cathode V o l ta ge (V)

I

F

, Forward Current (A)

Forward Current vs Forward Voltage

I

RRM

vs. Current Rate of Charge

60 A

120 A

240 A

0

20

40

60

80

0 400 800 1200 1600 2000 2400

-diF/dt (A/µs)

I

RRM

, Reverse Recovery Current (A)

TJ=125°C

VR=400V

Trr vs. Current Rate of Charge

60 A

120 A

240 A

50

75

100

125

150

175

200

0 400 800 1200 1600 2000 2400

-di

F

/dt (A/µs)

t

rr

, Reverse Recover y Time (ns)

TJ=125°C

VR=400V

Q

RR

vs. Curr ent Rate Charge

60 A

120 A

240 A

1

2

3

4

5

0 400 800 1200 1600 2000 2400

-diF/dt (A/µs)

Q

RR

, Reverse Recovery Charge (µC)

TJ=125°C

VR=400V

Capacitance vs. Reverse Voltage

0

400

800

1200

1600

2000

0.1 1 10 100 1000

V

R

, Reverse Vo ltage (V)

C, Capacitance (pF)

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein