SEMICONDUCTOR BF422 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES A High Voltage : VCEO>250V Complementary to BF423. N E K G J D ) RATING UNIT Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 5 V IC 50 ICP 100 Collector Power Dissipation PC 625 mW Base Current IB 50 mA Junction Temperature Tj 150 Tstg -65 150 DC Collector Current Peak Storage Temperature Range 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCB=200V, IE=0 - - 10 nA VCB=200V, IE=0, Tj=150 - - 10 A - - 50 nA ICBO Collector Cut-off Current F mA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC H F C SYMBOL MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC L MAXIMUM RATING (Ta=25 DIM A B C D E F G H J K L M N Emitter Cut-off Current IEBO VEB=5V, IC=0 DC Current Gain hFE VCE=20V, IC=25mA 50 - - - VCE(sat) IC=30mA, IB=5mA - - 0.6 V Collector-Emitter Saturation Voltage Base-Emitter Voltage VBE VCE=-20V, IC=25mA - 0.75 - V Transition Frequency fT VCE=10V, IC=10mA 60 - - MHz Reverse Transfer Capacitance Cre VCB=30V, IE=0, f=1MHz - - 1.6 pF 1998. 10. 31 Revision No : 2 1/3 BF422 hFE - IC 1.6 50 1.2 500 COMMON EMITTER Ta=25 C DC CURRENT GAIN hFE 60 0.8 0.6 40 0.4 0.3 30 0.2 20 0.15 0.1 I B =0.05mA 10 0 0 0 4 8 12 16 20 24 10 30 5 10 1 3 10 30 hFE - IC VCE(sat) - IC COMMON EMITTER VCE =10V 300 Ta=100 C Ta=25 C 100 Ta=-25 C 50 30 10 1 3 10 30 100 0.5 0.3 I C /I B =10 0.1 5 0.05 0.03 2 0.01 0.3 1 3 10 30 VCE(sat) - IC IC - VBE 0.5 0.3 Ta=100 C 0.1 0.05 Ta=25 C Ta=-25 C 0.01 1 3 10 30 COLLECTOR CURRENT IC (mA) Revision No : 2 100 COMMON EMITTER VCE =10V 40 30 20 Ta=25 C Ta=-25 C 1 100 50 Ta=1 00 C COMMON EMITTER I C /IB =5 100 COMMON EMITTER Ta=25 C 1 COLLECTOR CURRENT IC (mA) 2 0.3 2 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE 50 COLLECTOR CURRENT IC (mA) 0 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE =20V 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 500 1998. 10. 31 COMMON EMITTER Ta=25 C 300 0 0.3 28 COLLECTOR-EMITTER SATURATION VOLTAGE ,VCE(sat) (V) COLLECTOR CURRENT IC (mA) IC - VCE (LOW VOLTAGE REGION) 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 Cob, Cre - VCB 10 I E =0 f=1MHz Ta=25 C 8 6 4 C ob 2 C re 0 0 40 80 120 160 200 240 280 TRANSITION FREQUENCY fT (MHz) fT - IC 500 COMMON EMITTER Ta=25 C 300 VCE =20V 100 50 30 VCE =10V 10 0.3 1 3 10 30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA) PC - Ta SAFE OPERATING AREA 1000 600 400 200 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) 200 I C MAX.(PULSED) * 100 1 10 0ms 0m s * * I C MAX.(CONTINUOUS) 50 30 DC OP s 800 COLLECTOR CURRENT IC (mA) 200 1m COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre (pF) BF422 * ER AT IO N 10 5 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 3 1 0.5 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 1998. 10. 31 Revision No : 2 3/3