1998. 10. 31 1/3
SEMICONDUCTOR
TECHNICAL DATA
BF422
SILICON NPN TRIPLE DIFFUSED TYPE
Revision No : 2
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
High Voltage : VCEO>250V
Complementary to BF423.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO
VCB=200V, IE=0 - - 10 nA
VCB=200V, IE=0, Tj=150 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 50 nA
DC Current Gain hFE VCE=20V, IC=25mA 50 - - -
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=5mA - - 0.6 V
Base-Emitter Voltage VBE VCE=-20V, IC=25mA - 0.75 - V
Transition Frequency fTVCE=10V, IC=10mA 60 - - MHz
Reverse Transfer Capacitance Cre VCB=30V, IE=0, f=1MHz - - 1.6 pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 250 V
Collector-Emitter Voltage VCEO 250 V
Emitter-Base Voltage VEBO 5 V
Collector Current
DC IC50
mA
Peak ICP 100
Collector Power Dissipation PC625 mW
Base Current IB50 mA
Junction Temperature Tj150
Storage Temperature Range Tstg -65 150
1998. 10. 31 2/3
BF422
Revision No : 2
0
COLLECTOR CURRENT IC (mA)
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VCE (LOW VOLTAGE REGION)
0
COLLECTOR CURRENT IC (mA)
0
BASE-EMITTER VOLTAGE VBE (V)
IC - VBE
10
DC CURRENT GAIN hFE
31010.3
COLLECTOR CURRENT IC (mA)
hFE - IC
COLLECTOR-EMITTER SATURATION
0.3
COLLECTOR CURRENT IC (mA)
1310
VCE(sat) - IC
4 8 12 16 20 24 28
10
20
30
40
50
60 COMMON EMITTER
Ta=25 C
1.6 1.2 0.8
0.6
0.4
0.3
0.2
0.1
I =0.05mA
0
B
0.15
30 100
0
30
50
100
300
500
COLLECTOR CURRENT IC (mA)
hFE - IC
0.3
0
DC CURRENT GAIN hFE
100
10
50
30
300
500
1310 10030
COMMON EMITTER
Ta=25 C
V =20V
10
5
CE
COMMON EMITTER
V =10V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
VOLTAGE ,VCE(sat) (V)
30 100
0.01
0.05
0.1
0.3
0.5
1
2
VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT IC (mA)
0.05
0.01
0.3
0.1
0.3
0.5
1 3 10 10030
2
1
VCE(sat) - IC
COMMON EMITTER
Ta=25 C
I /I =10
5
2
CB
COMMON EMITTER
I /I =5
CB
Ta=100 C
Ta=25 C
Ta=-25 C
0.2 0.4 0.6 0.8 1.0 1.2
10
20
30
40
50
COMMON EMITTER
V =10V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
0.03
1998. 10. 31 3/3
BF422
Revision No : 2
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
0
0
COLLECTOR-BASE VOLTAGE VCB (V)
Cob, Cre - VCB
TRANSITION FREQUENCY fT (MHz)
31010.3
COLLECTOR CURRENT IC (mA)
fT - IC
REVERSE TRANSFER CAPACITANCE Cre (pF)
40 80 120 160 200 240 280
2
4
6
8
10
I =0
f=1MHz
Ta=25 C
E
Cob
Cre
30
10
30
50
100
300
500
COMMON EMITTER
Ta=25 C
V =20V
CE
V =10V
CE
PC (mW)
COLLECTOR POWER DISSIPATION
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
1000
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
I MAX.(PULSED)
I MAX.(CONTINUOUS)
DC OPERATION
0
0
PC - Ta
310
SAFE OPERATING AREA
40 80 120 160 200
200
400
600
800
30 100 300
0.5
1
3
5
10
30
50
100
200
C
C
*
100ms
10ms
1ms
*
*
*
AMBIENT TEMPERATURE Ta ( C)
SINGLE NONREPETITIVE
PULSE Ta=25 C
*
