NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dBat2GHz Pin 1 Indicator High P1dB of +14.0dBmat6.0GHz and +11.0dBmat14.0GHz RF OUT 1 2 3 8 9 4 7 6 5 Ground Ground Single Power Supply Operation RF IN 50 I/O Matched for High Freq. Use Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WiFi/Cellular/ DWDM) Functional Block Diagram Product Description The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-302 provides flexibility and stability. The NBB-302 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit designs. Ordering Information NBB-302 NBB-302-SB NBB-302-SR NBB-302-T1 NBB-302-PCK NBB-X-K1 25 piece bag 5 piece sample bag 100 pieces on 7"reel 1000 pieces on 13" reel Populated evaluation board with 5 piece sample bag Extended Frequency InGaP Amp Designer's Tool Kit Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2012, RF Micro Devices, Inc. DS120130 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 3 NBB-302 Absolute Maximum Ratings Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW Device Current 70 mA Channel Temperature 150 C Operating Temperature -45 to +85 C Storage Temperature -65 to +150 C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Specification Typ. Max. Unit Overall Small Signal Power Gain, S21 Condition VD =+3.9V, ICC =50mA, Z0 =50, TA =+25C 12.0 13.5 dB 11.0 13.0 dB f=1.0GHz to 4.0GHz 12.5 dB f=4.0GHz to 6.0GHz 9.0 Gain Flatness, GF Input and Output VSWR f=0.1GHz to 1.0GHz 10.5 dB f=6.0GHz to 12.0GHz 9.5 (avg.) dB f=12.0GHz to 14.0GHz 0.6 dB f=0.1GHz to 8.0GHz 2.4:1 f=0.1GHz to 4.0GHz 2.0:1 f=4.0GHz to 12.0GHz 2.8:1 f=12.0GHz to 15.0GHz Bandwidth, BW 12.5 GHz BW3 (3dB) Output Power at -1dB Compression, P1dB 13.7 dBm f=2.0GHz 14.8 dBm f=6.0GHz 11.0 dBm f=14.0GHz 5.5 dB f=3.0GHz +23.5 dBm f=2.0GHz -15 dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, GT/T 3.6 3.9 -0.0015 4.2 f=0.1GHz to 12.0GHz V dB/C MTTF versus Temperature at ICC =50mA Case Temperature Junction Temperature MTTF 85 C 122.9 C >1,000,000 hours 194 C/W Thermal Resistance JC 2 of 3 J T - T CASE --------------------------- = JC C Watt V D I CC 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120130 NBB-302 Recommended PCB Layout DS120130 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 3 of 3