FJP5200 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP5200 Rev. C 1
January 2009
FJP5200
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A.
• High Power Dissipation : 80watts.
• High Frequency : 30MHz.
• High Voltage : VCEO=250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to FJP1943
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO264 package, 2SC5200/FJL4315 : 150 watts
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220F package, FJPF5200 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Device mounted on min imu m pad size
hFE Classification
Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage 250 V
BVCEO Collector-Emitter Voltage 250 V
BVEBO Emitter-Base Voltage 5 V
ICCollector Current(DC) 17 A
IBBase Current 1.5 A
PDTotal Device Dissipation(TC=25°C)
Derate above 25°C80
0.64 W
W/°C
TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C
Symbol Parameter Max. Units
RθJC Thermal Resistance, Junction to Case 1.25 °C/W
Classification R O
hFE1 55 ~ 110 80 ~ 160
TO-220
1
1.Base 2.Collector 3.Emitter
FJP5200 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP5200 Rev. C 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Tes t: Pulse Widt=20µs, Duty Cycle≤2%
Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞250 V
BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V
ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA
IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA
hFE1 DC Current Gain VCE=5V, IC=1A 55 160
hFE2 DC Current Gain VCE=5V, IC=7A 35 60
VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V
VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V
fTCurrent Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
Cob Output Capacitance VCB=10V, f=1MHz 200 pF
Part Number Marking Package Packing Method Remarks
FJP5200RTU J5200R TO-220 TUBE hFE1 R grade
FJP5200OTU J5200O TO-220 TUBE hFE1 O grade
FJP5200 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP5200 Rev. C 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )
Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
IB = 0
IB=200mA
IB = 120mA
IB = 140mA
IB = 160mA
IB = 180mA
IB = 100mA
IB = 60mA
IB = 80mA
IB = 40mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
110
1
10
100
Vce=5V
Tj=-25oC
Tj=25oC
Tj=125oC
hFE, DC CURRENT GAIN
Ic [A ], COLL EC T OR C UR RE NT
110
1
10
100
Vce=5V
Tj=-25oC
Tj=25oC
Tj=125oC
hFE, DC CURRENT GAIN
Ic [A ], COLL EC T OR C UR RE NT
0.1 1 10
1
10
100
1000
10000
Ic=10Ib
Tj=-25oC
Tj=25oC
Tj=125oC
Vce(sat)[mV], SATURATION VOLTAGE
Ic[A], C OLL EC T OR C UR R EN T
0.1 1 10
100
1000
10000
Ic=10Ib
Tj=-25oCTj=25oC
Tj=125oC
Vbe(sat)[mV], SATURATION VOLTAGE
Ic[A], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
2
4
6
8
10
12 VCE = 5V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
FJP5200 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP5200 Rev. C 4
Typical Characteristics
Figure 7. Thermal Resistance Figure 8. Power Derating
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
0.2
0.4
0.6
0.8
1.0
1.2
Transient Thermal Resistance, Rthjc[oC / W]
Pulse duration [sec]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSI PA TION
TC[oC], CASE TEMPERATURE
FJP5200 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP5200 Rev. C 5
Mechanical Dimensions
TO220
FJP5200 NPN Epitaxial Silicon TransistorFJP5200
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP5200 Rev. C 6