© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, conditions and dimensions.
Phase Control Thyristor
ISOPLUS220TM
Electrically Isolated Back Surface
AC
G
G
DS
ISOPLUS 220TM
Isolated back surface*
CS 19
VRRM = 800 - 1200 V
IT(RMS) = 35 A
IT(AV)M = 13 A
ADVANCE TECHNICAL INFORMATION
VRSM VRRM Type
VDSM VDRM
VV
800 800 CS 19-08ho1C
1200 1200 CS 19-12ho1C
Symbol Test Conditions Maximum Ratings
IT(RMS) TVJ = TVJM 35 A
IT(AV)M TC = 85°C; 180° sine 13 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 V t = 8.3 ms (60 Hz), sine 105 A
TVJ = TVJM t = 10 ms (50 Hz), sine 85 A
VR = 0 V t = 8.3 ms (60 Hz), sine 90 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 45 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 36 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 33 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 20 A 100 A/µs
f = 50 Hz, tP =200 µs
VD = 2/3 VDRM
IG =0.08 A non repetitive, IT = IT(AV)M 500 A/µs
diG/dt = 0.08 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 500 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs5W
IT = IT(AV)M tP = 300 µs 2.5 W
PGAV 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~
TL1.6mm from case; 10s 260 °C
FCMounting force 11...65 / 2.4...11 N / lb
Weight 2g
Features
Features
zSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
zLow cathode-to-tab capacitance (15pF
typical)
zPlanar passivated chips
zEpoxy meets UL 94V-0
zHigh performance glass
passivated chip
zLong-term stability of leakage
current and blocking voltage
Applications
zMotor control
zPower converter
zAC power controller
zLight and temperature control
zSCR for inrush current limiting
in power supplies or AC drive
Advantages
zSpace and weight savings
zSimple mounting
DS98789A(8/03)
p h a s e - o u t
CS 19
Symbol Test Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM ≤1mA
VTIT= 30 A; TVJ = 25°C≤1.65 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.87 V
rT29 mΩ
VGT VD = 6 V; TVJ = 25°C≤1.5 V
TVJ = -40°C≤2.5 V
IGT VD = 6 V; TVJ = 25°C≤25 mA
TVJ = -40°C≤50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.2 V
IGD ≤3mA
ILTVJ = 25°C; tP = 10 µs≤75 mA
IG =0.08 A; diG/dt =0.08 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤50 mA
tgd TVJ = 25°C; VD = 1/2 VDRM ≤2µs
IG = 0.08 A; diG/dt = 0.08 A/µs
RthJC DC current 1.7 K/W
RthCK DC current typical 0.6 K/W
aMax. acceleration, 50 Hz 50 m/s2
ISOPLUS220 OUTLINE
p h a s e - o u t
