fiAAMOSPEC HIGH-POWER NPN SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching NPN circuit applications. 2N6338 FEATURES: 2N6339 * High DC Current Gain hFE=30-120 @ |, =10A 2N6340 =12 (Min)@1,=25A 2N6341 * Low Collector-Emitter Saturation Voitage Vegsaty = 1-0V (Max.) @ I, = 10 A, Ip = 1.0A * Complement to 2N6436-38 25 AMPERE POWER TRANSISTOR IMUM RATINGS NPN SILICON MAX 100-150 VOLTS 200 WATTS Characteristic Symbol | 2N6338 | 2N6339 | 2N6340 | 2N6341 | Unit 7 Collector-Emitter Voltage Veeo 100 120 140 150 Vv Collector-Base Voltage Vogo 120 140 160 180 V Emitter-Base Voltage Vepo 6.0 Vv Collector Current-Continuous lo 25 A -Peak 50 Base Current Ip 10 A Total Power Dissipation @T,=25C Py 200 Ww. Derate above 25C 1.14 wc Operating and Storage Junction Ty. Tst ~65 to +200 C Temperature Range . THERMAL CHARACTERISTICS Characteristic Symbol! Max Unit Thermal Resistance Junction to Case Reje 0.875 C PIN 1.BASE 2.EMITTER FIGURE -1 POWER DERATING COLLECTOR (CASE) 200 pm |_ MILLIMETERS MIN MAX ~ ai = = nN oO a o an o oO Pp , POWER DISSIPATION(WATTS) ) 2 oO o Ae-LTOaO mMmMooIOOyF oO N _ o o 25 50 75 100 125 150 175 200 Te , TEMPERATURE(C)2N6338 thru 2N6341 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Sustaining Voltage (1) Vegoisus) Vv (|g =50mA, I,= 0 ) 2N6338 100 2N6339 120 2N6340 140 2N6341 150 Collector Cutoff Current lceo uA ( Veg 50 V, I= 0) 2N6338 50 ( Ve_= 60 V, I,= 0) 2N6339 50 (Vog= 70 V, 1,= 0) 2N6340 50 (Veg= 75 V, I= 0) 2N6341 50 Collector Cutoff Current loepo uA (Vog= Rated Veg, I_= 0) 10 Emitter Cutoff Current leso uA (Veg= 6.0 V, I= 0) 100 ON CHARACTERISTICS (1) DC Current Gain hFE (l= O.5 A, Veg= 2.0 V) 50 (Ig= 10 A, Veg= 2.0 V) 30 120 (Ic= 25:A, Vog= 2.0 V ) 12 Collector-Emitter Saturation Voltage Voe;sat) Vv (lg =10A, 1,=1.0A) 1.0 (I= 25A, p= 2.5A) 1.8 Base-Emitter Saturation Voltage Vee{(saty Vv (Ip= 10 A, Ip= 1.0A) 1.8 (Ip= 25 A, Ip= 2.5A) 2.5 Base-Emitter On Voltage VBE(on) Vv (Ip= 10 A, Vog= 2.0 V) 1.8 DYNAMIC CHARATERISTICS Current-Gain Bandwidth Product (2) f; MHz (Ip= 1.0 A, Voge = 10 V,f = 10MHz ) 40 Output Capacitance Cop pF (Veg= 10 V,I_ = 0,f= 0.1MHZz ) 300 SWITCHING CHARACTERISTICS Rise Time Vec= 80 V, I= 10A t, 0.4 us Storage Time lai= a2 = 1A, ts 1.5 us Vae(orn = 8 V Fall Time te 0.6 us (1) Pulse Test: Pulse width = 300 ps , Duty Cycle = 2.0% (2) f,= | hy, f test2N6338 thru 2N6341 NPN a TURN-ON TIME ACTIVE-REGION SAFE OPERATING AREA (SOA) 70 50 200us t 4@ Vae(onF _ 20 a & 40 5 5.0 w x 20 Ww oO = aw 10 FE 9 < Q 05 a 8 02 S01 S77 Secu reskin it ec eal mr se 2N6338 0,05|~~ Thermal Limited 2N6339 03 05 07 10 20 30 50 70 10 20 30 at T .=25 C (Single Puise) 2N6340 le, COLLECTOR CURRENT (AMP) 001 anes" 2 3 5 7 10 20 30 50 70 100 200 CAPACITANCES Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) 5k 3k There are two limitation on the power handling ability of a transistor-average junction temperature and second 2k tivaxdown safe operating area curves indicate Ic-Vce c limits of the transistor that must be observed for reliable & 1k operation i.e., the transistor must not be subjected to Q 700 greater dissipation than curves indicate. 500 The data of SOA curve is base on T yp9=200 C;Te is = 300 variable depending on conditions. second breakdown 6 200 pulse limits are valid for duty cycles to 10% provided T.4p)$200C At high case temperatures, thermal limita - 400 tion will reduce the power that can be handled to values 70 less than the limitations imposed by second breakdown. Yor 02 05 10 20 50 10 20 50 100 Ve, REVERSE VOLTAGE(VOLTS) TURN-OFF TIME g Ww 2 F 03 65 0.7 1.0 20 30 60 7.0 40 20 (30 le , COLLECTOR CURRENT (AMP)