BAS70 HiRel Silicon Schottky Diode * HiRel Discrete and Microwave Semiconductor * General-purpose diodes for high-speed switching * Circuit protection * Voltage clamping * High-level detecting and mixing * Hermetically sealed microwave package * Space Qualified ESA/SCC Detail Spec. No.: 5512/020 Type Variant No. 01 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS70-T1 (ql) (ql) Quality Level: Marking - Ordering Code see below Pin Configuration 1 2 Package T1 P: Professional Quality, Ordering Code: Q62702A1173 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702A674 (see order instructions for ordering example) Semiconductor Group 1 of 4 Draft B, September 99 BAS70 Maximum Ratings Parameter Symbol Values Unit Reverse Voltage VR 70 V Forward Current IF 70 mA Surge Forward Current 1) IFSM 85 mA Power Dissipation 2) Ptot 250 mW Operating Temperature Range Top -55 to +150 C Storage Temperature Range Tstg -55 to +150 C Soldering Temperature 3) Tsol +250 C Junction Temperature Tj 150 C Thermal Resistance Junction-Case Rth(j-c) 100 K/W Electrical Characteristics at TA=25C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR1 - - 2 A IR2 - - 0,1 A VF1 0,30 0,38 0,44 V VF2 0,60 0,70 0,78 V VF3 0,80 0,85 1,00 V RFD 24 30 32 CT 1,2 1,5 2 pF DC Characteristics Reverse Current 1 VR=70V Reverse Current 2 VR=56V Forward Voltage 1 IF1=1mA Forward Voltage 2 IF2=10mA Forward Voltage 3 IF3=15mA Differential Forward Resistance 4) IF2=10mA, IF3=15mA AC Characteristics Total Capacitance VR=0V; f=1MHz Notes.: 1.) t 10ms, Duty Cycle=10% 2.) At TCASE = 125 C. For TCASE > 125 C derating is required. 3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. VF 4.) RFD=---------------5x10-3 A Semiconductor Group 2 of 4 Draft B, September 99 BAS70 Order Instructions: Full type variant including package variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... BAS70- (x) (ql) (x): Package Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702A674 BAS70-T1 ES For BAS70 in T1 Package; ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 234 24480 ++89 234 28438 martin.wimmers@Infineon Technologies-scg.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 3 of 4 Draft B, September 99 BAS70 T1 Package X1 B Y1 A Y2 Symbol C D F G A B C D E F G H 2 1 E G H Millimetre min max 1,30 1,45 1,15 1,35 0,40 0,10 0,50 0,30 0,06 0,10 5,50 0,40 0,60 Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 4 of 4 Draft B, September 99