STK531345AE - ON SEMICONDUCTOR

June, 2017 − Rev. 12 1Publication Order Number:

PZTA42T1/D

PZTA42T1G

High Voltage Transistor

Surface Mount

NPN Silicon

Features

•PZTA42T1G is Complement to PZTA92T1G

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage

(Open Base) VCEO 300 Vdc

Collector−Base Voltage

(Open Emitter) VCBO 300 Vdc

Emitter−Base Voltage

(Open Collector) VEBO 6.0 Vdc

Collector Current (DC) IC500 mAdc

Total Power Dissipation

@ TA = 25°C (Note 1) PD1.5 W

Storage Temperature Range Tstg −65 to +150 °C

Junction Temperature TJ150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. Device mounted on a FR−4 glass epoxy printed circuit board

1.575 in x 1 .575 i n x 0 .0625 i n; m ounting pad for t he c ollector lead = 0 .93 sq i n.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient (Note 2) RqJA 83.3 °C/W

2. Device mounted on a FR−4 glass epoxy printed circuit board

1.575 in x 1 .575 i n x 0 .0625 i n; m ounting pad for t he c ollector lead = 0 .93 sq i n.

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

COLLECTOR 2, 4

BASE

EMITTER 3

SOT−223 PACKAGE

NPN SILICON

HIGH VOLTAGE TRANSISTOR

SURFACE MOUNT

AYW

P1D G

P1D = Specific Device Code

A = Assembly Location

Y = Year

W = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device Package Shipping†

ORDERING INFORMATION

PZTA42T1G SOT−223

(Pb−Free) 1,000 / Tape & Ree

SPZTA42T1G SOT−223

(Pb−Free) 1,000 / Tape & Ree

123

PZTA42T1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics Symbol Min Max Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 − Vdc

Collector-Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) V(BR)CBO 300 − Vdc

Emitter-Base Breakdown Voltage

(IE = 100 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc

Collector-Base Cutoff Current

(VCB = 200 Vdc, IE = 0) ICBO − 0.1 mAdc

Emitter-Base Cutoff Current

(VBE = 6.0 Vdc, IC = 0) IEBO − 0.1 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 30 mAdc, VCE = 10 Vdc)

hFE 25

−

DYNAMIC CHARACTERISTICS

Current-Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT50 − MHz

Feedback Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Cre − 3.0 pF

Collector-Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) − 0.5 Vdc

Base-Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) − 0.9 Vdc

3. Pulse Test Conditions, tp = 300 ms, d 0.02.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

120

0.1 1.0 10

100

hFE, DC CURRENT GAIN

TJ = +125°C

25°C

-55°C

VCE = 10 Vdc

100

PZTA42T1G

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C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (V)

0.1

100

0.1

1.0 10 1000

Ceb @ 1MHz

Figure 2. Capacitance

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (V)

1.4

0.0

1.2

1.0

0.8

0.6

0.4

0.2

100100.1 1.0

100

1.0 Ccb @ 1MHz

VBE(on) @ 25°C, VCE = 10 V

VCE(sat) @ 25°C, IC/IB = 10

VBE(sat) @ 25°C, IC/IB = 10

VCE(sat) @ 125°C, IC/IB = 10

VCE(sat) @ -55°C, IC/IB = 10

VBE(sat) @ 125°C, IC/IB = 10

VBE(sat) @ -55°C, IC/IB = 10

VBE(on) @ 125°C, VCE = 10 V

VBE(on) @ -55°C, VCE = 10 V

Figure 3. “ON” Voltages

Figure 4. Current Gain Bandwidth Product Figure 5. Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

100

0.01

0.1

IC, COLLECTOR CURRENT (A)

10 ms

1.0 s

0.001 100

IC, COLLECTOR CURRENT (mA)

f , CURRENT−GAIN — BANDWIDTH (MHz)

10010.1

100

10 1

PZTA42T1G

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PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.5

0.059 ǒmm

inchesǓ

SCALE 6:1

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091 2.3

0.091

2.0

0.079

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

0.08 (0003)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCH.

HEDIM

AMIN NOM MAX MIN

MILLIMETERS

1.50 1.63 1.75 0.060

INCHES

A1 0.02 0.06 0.10 0.001

b0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c0.24 0.29 0.35 0.009

D6.30 6.50 6.70 0.249

E3.30 3.50 3.70 0.130

e2.20 2.30 2.40 0.087

0.85 0.94 1.05 0.033

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

NOM MAX

L1 1.50 1.75 2.00 0.060

6.70 7.00 7.30 0.264 0.069 0.078

0.276 0.287

HE− −

0°10°0°10°

L0.20 −−− −−− 0.008 −−− −−−

PZTA42T1/D

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