SEMICONDUCTOR BSS64 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Emitter Current IE -100 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -65150 Storage Temperature Range 1 P P J 120 3 M K VCBO H Collector-Base Voltage 2 N UNIT C RATING A SYMBOL G CHARACTERISTIC D MAXIMUM RATING (Ta=25) MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking Lot No. U6 Type Name ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CEO IC=4mA, IB=0 80 - - V Collector-Base Breakdown Voltage V(BR)CBO IC=100A, IE=0 120 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A, IC=0 5.0 - - V VCB=90V, IE=0 - - 100 nA VCB=90V, IE=0, Ta=150 - - 50 A VEB=5V, IC=0 - - 200 nA VCE=1V, IC=1mA - 60 - VCE=1V, IC=4mA 20 - - VCE=1V, IC=10mA - 80 - VCE=1V, IC=20mA - 55 - IC=4mA, IB=0.4mA - - 1.2 IC=4mA, IB=0.4mA - - 0.15 IC=50mA, IB=15mA - - 0.2 60 - - MHz - - 5.0 pF Collector Cut-off Current ICBO Emitter Cut-off Current IEBO hFE DC Current Gain Base-Emitter Saturation Voltage VBE(sat) Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Collector Output Capacitance 1998. 6. 15 Revision No : 1 Cob VCE=10V, IC=4mA, f=100MHz VCB=10V, IE=0, f=1MHz V V 1/1