1998. 6. 15 1/1
SEMICONDUCTOR
TECHNICAL DATA
BSS64
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Type Name
Marking
Lot No.
U6
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC100 mA
Emitter Current IE-100 mA
Collector Power Dissipation PC200 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -65ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V(BR)CEO IC=4mA, IB=0 80 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=100ỌA, IE=0 120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100ỌA, IC=0 5.0 - - V
Collector Cut-off Current ICBO
VCB=90V, IE=0 - - 100 nA
VCB=90V, IE=0, Ta=150ᴱ- - 50 ỌA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 200 nA
DC Current Gain hFE
VCE=1V, IC=1mA - 60 -
VCE=1V, IC=4mA 20 - -
VCE=1V, IC=10mA - 80 -
VCE=1V, IC=20mA - 55 -
Base-Emitter Saturation Voltage VBE(sat) IC=4mA, IB=0.4mA - - 1.2 V
Collector-Emitter Saturation Voltage VCE(sat)
IC=4mA, IB=0.4mA - - 0.15
V
IC=50mA, IB=15mA - - 0.2
Transition Frequency fTVCE=10V, IC=4mA, f=100MHz 60 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 5.0 pF
