HN1D01FE
2004-06-25
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FE
Ultra High Speed Switching Application
HN1D02FU is composed of 2 unit of cathode common.
Low forward voltage : VF (3) = 0.92V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300* mA
Average forward current IO 100* mA
Surge current (10ms) IFSM 2* A
Power dissipation P 100** mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55~150 °C
*: These are the Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).
Where Unit 1 and Unit 2 are used independently or simultaneously, the
Maximum Ratings per diode are 75% of those for a single diode.
** : Total rating.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― IF = 1mA ― 0.61 ―
VF (2) ― I
F = 10mA ― 0.74 ―
Forward voltage
VF (3) ― IF = 100mA ― 0.92 1.20
V
IR (1) ― VR = 30V ― ― 0.1
Reverse current
IR (2) ― V
R = 80V ― ― 0.5
µA
Total capacitance CT ― V
R = 0, f = 1MHz ― 2.2 ― pF
Reverse recovery time trr ― IF = 10mA (fig.1) ― 1.6 ― ns
1. CATHODE
2. CATHODE
3. ANODE
4. CATHODE
5. CATHODE
6. ANODE
JEDEC ―
JEITA ―
TOSHIBA 1-2X1A
Weight: 0.003g (typ.)
Unit in mm
HN1D01FE
2004-06-25
2
Pin Assignment (Top View) Marking
Fig. 1 Reverse Recovery Time (trr) Test Circuit
Unit 1
Unit 2
1 2 3
4
6
Q1
5
Q2
Q4 Q3
A2
HN1D01FE
2004-06-25
3
10u
100n
A
10n
A
1n
A
1u
(A)
HN1D01FE
2004-06-25
4
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and
sold, under any law and regulations.
030619EA
A
RESTRICTION S ON PRODUCT USE
