STYN210(S) thru STYN1010(S) Discrete Thyristors(SCRs) Dim. Dimensions TO-220AB A B C D E F G H J K M N Q R G A K A G K Dimensions TO-263(D2PAK) A G K 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC L L1 L2 L3 L4 .380 .405 .245 .320 .100 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 0.46 0.74 .018 .029 R ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180 conduction angle) Tc = 100C 10 A IT(AV) Average on-state current (180 conduction angle) Tc = 100C 6.4 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 105 tp = 10 ms 100 It Value tp = 10 ms 50 A2S 50 A/s - 40 to + 150 - 40 to + 125 C IT(RMS) I t dI/dt Critical rate of rise of on-state current Gate supply:IG = 100mA dIG/dt = 1A/s Tstg Tj Storage junction temperature range Operating junction temperature range Tl A 260 Maximum lead soldering temperature during 10s at 4.5mm from case C TYN VDRM VRRM Repetitive peak off-state voltage Tj = 125C 210 410 610 810 1010 200 400 600 800 1000 V STYN210(S) thru STYN1010(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) STANDARD Symbol IGT VGT VGD Test Conditions VD = 12 V VD = VDRM RL = 33 W RL = 3.3 kW TYNx08(S) Unit Tj = 25C MAX. 15 mA Tj = 25C MAX. 1.5 V Tj = 110C MIN. 0.2 V tgt VD = VDRM IG =40mA dIG/dt = 0.5 A/s Tj = 25C TYP 2 s IH IT = 100 mA Tj = 25C MAX. 30 mA IL IG = 1.2 IGT Tj = 25C TYP 50 mA Tj = 110C MIN. 200 V/s Tj = 25C MAX. 1.6 V Tj = 110C TYP 70 s 0.01 mA mA Gate open dV/dt VD = 67 % VDRM VTM ITM = 20 A Gate open s tp = 380 s VD = 67 % VDRM I T M=20A V R =25V tq dI T M/dt=30 A/s dV D /dt=50V /s IDRM VDRM rated Tj = 25C IRRM VRRM rated Tj = 110C MAX. 2 THERMAL RESISTANCES Symbol Parameter Rth(j-c) J unction to case (DC) Rth(j-a) Junction to ambient (DC) S =1.0 cm Value Unit 2.5 C/W TO-220AB 60 C/W TO-263 45 S= copper surface under tab PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Package STYN x10S 200~~1000 15 mA TO-263 S T Y N x10 200~~1000 15 mA TO-220AB OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode STYN x10S STYN x10S 1.5 g 50 Tube S T Y N x10 S T Y N x10 2.3 g 250 B ulk Note: x = voltage